IP Library Granted Patent US 12,566,296
Granted Patent B2
US 12,566,296 · App. 18/078,575 · Granted Mar 3, 2026

Optical module having multiple laser diode devices and a support member

Inventors: Eric Goutain (Fremont, CA); James W. Raring (Santa Barbara, CA); Paul Rudy (Manhattan Beach, CA); Hua Huang (Vancouver, WA)
Assignee: KYOCERA SLD Laser, Inc.
G02B6/27B82Y20/00F21K9/60F21K9/62F21K9/64F21V9/30F21V9/32F21V23/06F21V29/713F21V29/83G02B6/0005G02B6/26G02B6/4214G02B6/4249H01S5/005H01S5/0085H01S5/0092H01S5/02224H01S5/02251H01S5/02255H01S5/02315H01S5/02326H01S5/0233H01S5/0235H01S5/02469H01S5/02476H01S5/2201H01S5/32341H01S5/3235H01S5/34333H01S5/4012H01S5/4025H01S5/4031F21Y2101/00F21Y2115/10F21Y2115/30H01L2224/45124H01L2224/48091H01L2924/00014H01S5/0021H01S5/0087H01S5/02208H01S5/02345H01S5/0287H01S5/0425H01S5/04256H01S5/4056H01S2301/14H01S2304/04
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Quick Facts
Patent No.
US 12,566,296
App. No.
18/078,575
Granted
Mar 3, 2026
Kind
B2
Abstract

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

Claims (61)

1 . A system comprising:

a package having an optical module apparatus configured for use with an application selected from white lighting applications, multi-colored lighting applications, flat panel applications, medical applications, metrology applications, beam projector applications, display applications, high intensity lamp applications, spectroscopy applications, entertainment applications, theater applications, music applications, concert applications, analysis fraud detection applications, authenticating applications, tool applications, water treatment applications, laser dazzler applications, targeting applications, communications applications, transformation applications, transportation applications, leveling applications, curing applications, chemical treatment applications, heating applications, cutting applications, ablating applications, pumping applications, optical device applications, optoelectronic device applications, source lighting applications, power scaling applications, spectral broadening applications, or multicolor monolithic integration applications, the optical module apparatus comprising:

a plurality of ceramic support members;

a plurality of laser diodes each coupled to one of the plurality of ceramic support members to form a plurality of laser diode chips, each of the plurality of laser diode chips having a single laser diode configured to emit a laser beam; wherein at least one of the plurality of laser diode chips comprises a gallium and nitrogen containing laser diode device configured to emit a laser beam characterized by emission selected from violet emission with a wavelength ranging from 395 nm to 425 nm, blue emission with a wavelength ranging from 415 nm to 485 nm, or green emission with a wavelength ranging from 500 nm to 560 nm;

one or more optical devices configured to receive laser beams from the plurality of laser diode chips, and to combine or collimate the laser beams to provide an output beam characterized by a selected wavelength range, a selected spectral width, a selected power, and a selected spatial configuration; and

a power source electrically coupled to the plurality of laser diode chips;

wherein:

the plurality of ceramic support members are configured to transport thermal energy from the plurality of laser diode chips to a heat sink;

the one or more optical devices comprise free space optics configured to create one or more free space optical beams;

a thermal path from each of the plurality of laser diode chips to the heat sink is characterized by a thermal impedance; and

the optical module apparatus is characterized by an optical output power of at least 5 W.

2 . The system of claim 1 , wherein at least one of the plurality of laser diode chips comprises an AlInGaP laser diode device configured to emit a laser beam characterized by red emission with a wavelength ranging from 625 nm to 665 nm; or

wherein at least one of the plurality of laser diode chips comprises a GaAs or AlGaAsP laser diode device configured to emit a laser beam characterized by an infrared emission, or a combination thereof.

3 . The system of claim 1 , further comprising an electrical input interface configured to couple electrical input power to the plurality of laser diode chips; and wherein the electrical input interface is configured to couple radio frequency electrical inputs to the laser diode chips or wherein the electrical input interface is configured to couple logic signals to the laser diode chips.

4 . The system of claim 1 , wherein the plurality of laser diode chips are operable in an environment comprising at least 150,000 ppm oxygen gas; wherein each of the plurality of laser diode chips is substantially free from efficiency degradation over a time period from the oxygen gas.

5 . The system of claim 1 , further comprising a combiner configured to provide the output beam characterized by a selected spatial pattern having a maximum width and a minimum width.

6 . The system of claim 1 , further comprising a plurality of submount members characterized by a coefficient of thermal expansion (CTE) each coupled to one of the plurality of ceramic support members and the heat sink, wherein the plurality of submount members couple the plurality of laser diode chips to the plurality of ceramic support members, and wherein each of the plurality of submount members comprises a material selected from aluminum nitride, silicon carbide, BeO, diamond, composite diamond, and a combination of any of the foregoing.

7 . The system of claim 1 , further comprising a submount attached to the plurality of ceramic support members, the submount being characterized by a thermal conductivity of at least 200 W/(mk); and wherein each of the plurality of laser diode chips are thermally coupled directly to one of the plurality of ceramic support members.

8 . The system of claim 1 , wherein the one or more optical devices comprise an optical fiber, wherein the output beam is coupled into the optical fiber.

9 . The system of claim 1 , wherein the plurality of laser diode chips include N laser diode chips and N ranges from 3 to 50.

10 . The system of claim 1 , wherein the output beam is characterized by an optical power of 5 W and greater, 10 W and greater, 50 W and greater, 100 W and greater, or 200 W and greater.

11 . A system comprising:

a package having an optical module apparatus configured for use with an application, the optical module apparatus comprising:

a plurality of ceramic support members;

a plurality of laser diodes each coupled to one of the plurality of ceramic support members to form a plurality of laser diode chips; each of the plurality of laser diode chips having a single laser diode configured to emit a laser beam; wherein at least one of the laser diode chips comprises gallium and nitrogen and is configured to emit a laser beam characterized by emission selected from violet emission with a wavelength ranging from 395 nm to 425 nm, blue emission with a wavelength ranging from 415 nm to 485 nm, green emission with a wavelength ranging from 500 nm to 560 nm, and a combination thereof;

one or more optical devices configured to receive laser beams from the plurality of laser diode chips, and to combine and/or collimate the laser beams;

the laser beams characterized by a selected wavelength range, a selected spectral width, a selected power, and a selected spatial configuration;

wherein the one or more optical devices comprise free space optics configured to create one or more free space optical beams;

an optical fiber configured to receive the laser beams from the plurality of laser diode chips by optical coupling; and to provide an output beam characterized by a selected wavelength range, a selected spectral width, a selected power, and a selected spatial configuration; wherein:

the plurality of ceramic support members are configured to transport thermal energy from the plurality of laser diode chips to a heat sink; and

the output beam is characterized by an optical output power of at least 5 W.

12 . The system of claim 11 , wherein the free space optics provide optical coupling of the laser beams to the optical fiber and are selected from one or more of a fast axis collimating (FAC) lens or a slow axis collimating (SAC) lens, and/or wherein the optical fiber is spaced from the plurality of laser diode chips by between about 0.2 mm to about 10 mm.

13 . The system of claim 11 , wherein the output beam is characterized by an optical power of 5 W and greater, 10 W and greater, 50 W and greater, 100 W and greater, or 200 W and greater.

14 . The system of claim 11 , wherein the optical fiber has a dimension of between about 100 μm to about 800 μm.

15 . The system of claim 11 , wherein the application is selected from white lighting applications, multi-colored lighting applications, flat panel applications, medical applications, metrology applications, beam projector applications, display applications, high intensity lamp applications, spectroscopy applications, entertainment applications, theater applications, music applications, concert applications, analysis fraud detection applications, authenticating applications, tool applications, water treatment applications, laser dazzler applications, targeting applications, communications applications, transformation applications, transportation applications, leveling applications, curing applications, chemical treatment applications, heating applications, cutting applications, ablating applications, pumping applications, optical device applications, optoelectronic device applications, source lighting applications, power scaling applications, spectral broadening applications, or multicolor monolithic integration applications.

16 . The system of claim 11 , wherein at least one of the laser diode chips comprises an AlInGaP laser diode device configured to emit a laser beam characterized by red emission with a wavelength ranging from 625 nm to 665 nm; or wherein at least one of the laser diode chips comprises a GaAs or AlGaAsP laser diode device configured to emit a laser beam characterized by an infrared emission, or a combination thereof.

17 . A system comprising:

an optical module apparatus configured for use with an application; and

a package configured to enclose the optical module apparatus, the optical module apparatus comprising:

a plurality of ceramic support members;

a plurality of laser diodes each coupled to one of the plurality of ceramic support members to form a plurality of laser diode chips; each of the plurality of laser diode chips having a single laser diode configured to emit a laser beam; wherein at least one of the laser diode chips comprises a gallium and nitrogen containing laser diode device configured to emit a laser beam characterized by emission selected from violet emission with a wavelength ranging from 395 nm to 425 nm, blue emission with a wavelength ranging from 415 nm to 485 nm, or green emission with a wavelength ranging from 500 nm to 560 nm;

one or more optical devices configured to receive laser beams from the plurality of laser diode chips, and to combine or collimate the laser beams to provide an output beam characterized by a selected wavelength range, a selected spectral width, a selected power, and a selected spatial configuration; and

a power source electrically coupled to the plurality of laser diode chips;

wherein:

the plurality of ceramic support members are configured to transport thermal energy from the plurality of laser diode chips to a heat sink;

the one or more optical devices comprise free space optics configured to create one or more free space optical beams;

a thermal path from each of the plurality of laser diode chips to the heat sink is characterized by a thermal impedance; and

the optical module apparatus is characterized by an optical output power of 5 W or greater.

18 . The system of claim 17 , wherein the application is selected from white lighting applications, multi-colored lighting applications, flat panel applications, medical applications, metrology applications, beam projector applications, display applications, high intensity lamp applications, spectroscopy applications, entertainment applications, theater applications, music applications, concert applications, analysis fraud detection applications, authenticating applications, tool applications, water treatment applications, laser dazzler applications, targeting applications, communications applications, transformation applications, transportation applications, leveling applications, curing applications, chemical treatment applications, heating applications, cutting applications, ablating applications, pumping applications, optical device applications, optoelectronic device applications, source lighting applications, power scaling applications, spectral broadening applications, or multicolor monolithic integration applications.

19 . A system comprising:

an optical module apparatus configured for use with an application; and

a package configured to enclose the optical module apparatus, the optical module apparatus comprising:

a plurality of ceramic support members;

a plurality of laser diodes each coupled to one of the plurality of ceramic support members to form a plurality of laser diode chips; each of the plurality of laser diode chips having a single laser diode; each of the plurality of laser diode chips overlying one of the plurality of ceramic support members, each of the laser diode chips configured to emit a laser beam; wherein at least one of the laser diode chips comprises gallium and nitrogen and is configured to emit a laser beam characterized by emission selected from violet emission with a wavelength ranging from 395 nm to 425 nm, blue emission with a wavelength ranging from 415 nm to 485 nm, green emission with a wavelength ranging from 500 nm to 560 nm, and a combination thereof;

one or more optical devices configured to receive laser beams from the plurality of laser diode chips, and to combine and/or collimate the laser beams;

the laser beams characterized by a selected wavelength range, a selected spectral width, a selected power, and a selected spatial configuration;

wherein the one or more optical devices comprise free space optics configured to create one or more free space optical beams;

an optical fiber configured to receive the laser beams from the plurality of laser diode chips by optical coupling; and to provide an output beam characterized by a selected wavelength range, a selected spectral width, a selected power, and a selected spatial configuration; wherein:

the plurality of ceramic support members are configured to transport thermal energy from the plurality of laser diode chips to a heat sink; and

the output beam is characterized by an optical output power of at least 5 W.

20 . The system of claim 19 , wherein the application is selected from white lighting applications, multi-colored lighting applications, flat panel applications, medical applications, metrology applications, beam projector applications, display applications, high intensity lamp applications, spectroscopy applications, entertainment applications, theater applications, music applications, concert applications, analysis fraud detection applications, authenticating applications, tool applications, water treatment applications, laser dazzler applications, targeting applications, communications applications, transformation applications, transportation applications, leveling applications, curing applications, chemical treatment applications, heating applications, cutting applications, ablating applications, pumping applications, optical device applications, optoelectronic device applications, source lighting applications, power scaling applications, spectral broadening applications, or multicolor monolithic integration applications.

Continuity (9)
Continuation 16796320 · Feb 20, 2020
Continuation 16281912 · Feb 21, 2019
Continuation 15803301 · Nov 3, 2017
Continuation 15159595 · May 19, 2016
Continuation 14684240 · Apr 10, 2015
Continuation 13732233 · Dec 31, 2012
Continuation In Part 13356355 · Jan 23, 2012
Provisional Application 61435578 · Jan 24, 2011
Related Publication 20230176289A1 · Jun 8, 2023
References Cited (136)
US 5365534A · Janssen et al. · 1994 [cited by applicant]
US 6052399A · Sun · 2000 [cited by examiner]
US 6072197A · Horino et al. · 2000 [cited by applicant]
US 6195381B1 · Botez et al. · 2001 [cited by applicant]
US 6249536B1 · Farries et al. · 2001 [cited by applicant]
US 6324197B1 · Suda · 2001 [cited by applicant]
US 6639925B2 · Niwa et al. · 2003 [cited by applicant]
US 6700709B1 · Fermann · 2004 [cited by applicant]
US 6728277B1 · Wilson · 2004 [cited by applicant]
US 6858882B2 · Tsuda et al. · 2005 [cited by applicant]
US 6895027B2 · Treusch et al. · 2005 [cited by applicant]
US 6898222B2 · Hennig · 2005 [cited by examiner]
US 7009199B2 · Hall · 2006 [cited by applicant]
US 7010194B2 · Anikitchev · 2006 [cited by applicant]
US 7024077B2 · Nagano · 2006 [cited by applicant]
US 7436875B2 · Miura · 2008 [cited by applicant]
US 7598104B2 · Teng et al. · 2009 [cited by applicant]
US 7709284B2 · Iza et al. · 2010 [cited by applicant]
US 7830945B2 · Nagano et al. · 2010 [cited by applicant]
US 7962044B2 · McCallion et al. · 2011 [cited by applicant]
US 8124996B2 · Raring et al. · 2012 [cited by applicant]
US 8126024B1 · Raring · 2012 [cited by applicant]
US 8143148B1 · Raring et al. · 2012 [cited by applicant]
US 8242522B1 · Raring · 2012 [cited by applicant]
US 8247887B1 · Raring et al. · 2012 [cited by applicant]
US 8252662B1 · Poblenz et al. · 2012 [cited by applicant]
US 8254425B1 · Raring · 2012 [cited by applicant]
US 8259769B1 · Raring et al. · 2012 [cited by applicant]
US 8284810B1 · Sharma et al. · 2012 [cited by applicant]
US 8294179B1 · Raring · 2012 [cited by applicant]
US 8314429B1 · Raring et al. · 2012 [cited by applicant]
US 8350273B2 · Vielemeyer · 2013 [cited by applicant]
US 8351478B2 · Raring et al. · 2013 [cited by applicant]
US 8416825B1 · Raring · 2013 [cited by applicant]
US 8422525B1 · Raring et al. · 2013 [cited by applicant]
US 8427590B2 · Raring et al. · 2013 [cited by applicant]
US 8509275B1 · Raring et al. · 2013 [cited by applicant]
US 9025635B2 · Goutain · 2015 [cited by examiner]
US 9065237B2 · Guo et al. · 2015 [cited by applicant]
US 9287684B2 · Raring et al. · 2016 [cited by applicant]
US 9371970B2 · Goutain et al. · 2016 [cited by applicant]
US 9595813B2 · Raring et al. · 2017 [cited by applicant]
US 9716369B1 · Raring · 2017 [cited by applicant]
US 9835296B2 · Goutain et al. · 2017 [cited by applicant]
US 10050415B1 · Raring et al. · 2018 [cited by applicant]
US 10247366B2 · Goutain · 2019 [cited by examiner]
US 10587097B1 · Raring · 2020 [cited by applicant]
US 10655800B2 · Goutain · 2020 [cited by examiner]
US 11005234B1 · Raring · 2021 [cited by applicant]
US 11543590B2 · Goutain · 2023 [cited by examiner]
US 20020027933A1 · Tanabe et al. · 2002 [cited by applicant]
US 20020105986A1 · Yamasaki · 2002 [cited by applicant]
US 20020118715A1 · Kimura et al. · 2002 [cited by applicant]
US 20030129810A1 · Barth et al. · 2003 [cited by applicant]
US 20030200931A1 · Goodwin · 2003 [cited by applicant]
US 20040013431A1 · Vail et al. · 2004 [cited by applicant]
US 20040027631A1 · Nagano et al. · 2004 [cited by applicant]
US 20040170203A1 · Tojo et al. · 2004 [cited by applicant]
US 20040233950A1 · Furukawa et al. · 2004 [cited by applicant]
US 20050168564A1 · Kawaguchi et al. · 2005 [cited by applicant]
US 20050214992A1 · Chakraborty et al. · 2005 [cited by applicant]
US 20050218413A1 · Matsumoto et al. · 2005 [cited by applicant]
US 20050230701A1 · Huang · 2005 [cited by applicant]
US 20050232327A1 · Nomura et al. · 2005 [cited by applicant]
US 20050286591A1 · Lee · 2005 [cited by applicant]
US 20060018355A1 · Feitisch et al. · 2006 [cited by applicant]
US 20060029112A1 · Young et al. · 2006 [cited by applicant]
US 20060033009A1 · Kobayashi · 2006 [cited by applicant]
US 20060126688A1 · Kneissl · 2006 [cited by applicant]
US 20060213429A1 · Motoki et al. · 2006 [cited by applicant]
US 20070101932A1 · Schowalter et al. · 2007 [cited by applicant]
US 20070153866A1 · Shchegrov · 2007 [cited by applicant]
US 20070184637A1 · Haskell et al. · 2007 [cited by applicant]
US 20070241353A1 · Taki · 2007 [cited by applicant]
US 20070259464A1 · Bour et al. · 2007 [cited by applicant]
US 20070272933A1 · Kim et al. · 2007 [cited by applicant]
US 20080025361A1 · Jerman et al. · 2008 [cited by applicant]
US 20080029152A1 · Milshtein et al. · 2008 [cited by applicant]
US 20080192785A1 · Schulz-Harder et al. · 2008 [cited by applicant]
US 20080251020A1 · Franken et al. · 2008 [cited by applicant]
US 20080283851A1 · Akita · 2008 [cited by applicant]
US 20090021723A1 · De Lega · 2009 [cited by applicant]
US 20090066241A1 · Yokoyama · 2009 [cited by applicant]
US 20090092162A1 · Huff et al. · 2009 [cited by applicant]
US 20090147816A1 · Iga et al. · 2009 [cited by applicant]
US 20090153752A1 · Silverstein · 2009 [cited by applicant]
US 20090250686A1 · Sato et al. · 2009 [cited by applicant]
US 20090309127A1 · Raring et al. · 2009 [cited by applicant]
US 20090310640A1 · Sato et al. · 2009 [cited by applicant]
US 20090316116A1 · Melville et al. · 2009 [cited by applicant]
US 20100006546A1 · Young et al. · 2010 [cited by applicant]
US 20100054292A1 · Bessho · 2010 [cited by applicant]
US 20100110556A1 · Chann et al. · 2010 [cited by applicant]
US 20100140630A1 · Hamaguchi et al. · 2010 [cited by applicant]
US 20100276663A1 · Enya et al. · 2010 [cited by applicant]
US 20100290498A1 · Hata et al. · 2010 [cited by applicant]
US 20100302464A1 · Raring et al. · 2010 [cited by applicant]
US 20100328626A1 · Miyazaki · 2010 [cited by applicant]
US 20110031508A1 · Hamaguchi et al. · 2011 [cited by applicant]
US 20110073888A1 · Ueno et al. · 2011 [cited by applicant]
US 20110116253A1 · Sugiyama · 2011 [cited by applicant]
US 20110129669A1 · Fujito et al. · 2011 [cited by applicant]
US 20110150020A1 · Haase et al. · 2011 [cited by applicant]
US 20110157706A1 · Mitra et al. · 2011 [cited by applicant]
US 20110182056A1 · Trottier et al. · 2011 [cited by applicant]
US 20110188530A1 · Lell et al. · 2011 [cited by applicant]
US 20110211333A1 · Bartlett · 2011 [cited by applicant]
US 20110247556A1 · Raring et al. · 2011 [cited by applicant]
US 20110281422A1 · Wang et al. · 2011 [cited by applicant]
US 20110286484A1 · Raring et al. · 2011 [cited by applicant]
US 20110305256A1 · Chann et al. · 2011 [cited by applicant]
US 20120104359A1 · Felker et al. · 2012 [cited by applicant]
US 20120178198A1 · Raring et al. · 2012 [cited by applicant]
US 20120187371A1 · Raring et al. · 2012 [cited by applicant]
US 20130016750A1 · Raring et al. · 2013 [cited by applicant]
US 20130022064A1 · Raring et al. · 2013 [cited by applicant]
US 20130044782A1 · Raring · 2013 [cited by applicant]
US 20130064261A1 · Sharma et al. · 2013 [cited by applicant]
U.S. Appl. No. 13/439,656 Non-Final Office Action mailed Aug. 27, 2014, 21 pages. [cited by applicant]
U.S. Appl. No. 13/439,656 Non-Final Office Action mailed Jun. 10, 2015, 17 pages. [cited by applicant]
U.S. Appl. No. 13/439,656 Final Office Action mailed Jan. 28, 2015, 20 pages. [cited by applicant]
U.S. Appl. No. 13/439,656 Notice of Allowance mailed Nov. 6, 2015, 11 pages. [cited by applicant]
U.S. Appl. No. 15/047,494 Pre-Interview First Office Action mailed Oct. 31, 2016, 5 pages. [cited by applicant]
U.S. Appl. No. 15/047,494 First Action Interview Office Action mailed Feb. 23, 2017, 5 pages. [cited by applicant]
U.S. Appl. No. 15/047,494 Notice of Allowance mailed Mar. 22, 2017, 12 pages. [cited by applicant]
U.S. Appl. No. 15/643,976 Pre-Interview First Office Action mailed Jan. 5, 2018, 5 pages. [cited by applicant]
U.S. Appl. No. 15/643,976 First Action Interview Office Action mailed Mar. 13, 2018, 2 pages. [cited by applicant]
U.S. Appl. No. 15/643,976 Notice of Allowance mailed Apr. 12, 2018, 17 pages. [cited by applicant]
U.S. Appl. No. 16/045,463 Non-Final Office Action mailed Apr. 19, 2019, 24 pages. [cited by applicant]
U.S. Appl. No. 16/045,463 Final Office Action mailed Aug. 9, 2019, 10 pages. [cited by applicant]
U.S. Appl. No. 16/045,463 Notice of Allowance mailed Oct. 30, 2019, 7 pages. [cited by applicant]
U.S. Appl. No. 16/811,187 Non-Final Office Action mailed Jul. 27, 2020, 34 pages. [cited by applicant]
U.S. Appl. No. 16/811,187 Final Office Action mailed Nov. 13, 2020, 22 pages. [cited by applicant]
U.S. Appl. No. 16/811,187 Notice of Allowance mailed Jan. 14, 2021, 8 pages. [cited by applicant]
U.S. Appl. No. 17/315,712 Non-Final Office Action mailed Sep. 28, 2022, 24 pages. [cited by applicant]
U.S. Appl. No. 17/315,712 Final Office Action mailed Jan. 20, 2023, 17 pages. [cited by applicant]