Method of treating substrate and apparatus for treating substrate
The apparatus includes a plasma chamber and a process chamber separated by an ion blocker. A plasma power source excites a first treatment gas into radicals, which mix with a second treatment gas in the process chamber to treat a substrate. A controller manages gas flow and power for cyclic treatments.
1 . An apparatus for treating a substrate, the apparatus comprising:
a plasma chamber for providing a plasma generation space;
a first treatment gas supply unit connected to the plasma generation space of the plasma chamber and configured to supply a first treatment gas to the plasma generation space of the plasma chamber;
a plasma power source for applying a power to excite the first treatment gas supplied to the plasma chamber into a plasma state;
a process chamber provided under the plasma chamber and having an inner space;
a second treatment gas supply unit connected to the inner space of the process chamber and configured to supply a second treatment gas to the inner space of the process chamber; a support unit for supporting the substrate in the inner space;
an ion blocker provided between the plasma chamber and the process chamber, and through which radicals constituting plasma of the first treatment gas selectively pass downward; and
a controller configured to output control signals to the plasma power source, the first treatment gas supply unit, and the second treatment gas supply unit to control a timing and flow rate of the first treatment gas and the second treatment gas and control power application of the plasma power source,
wherein the controller is configured further to repeat a unit cycle a predetermined number of times,
wherein the controller is configured further to:
perform, during a process period of each unit cycle, a substrate treatment step of exposing the substrate to a reaction gas which is a mixture of radicals of the first treatment gas and the second treatment gas in the inner space, and
terminate the process period by stopping supply of the first treatment gas and the second treatment gas,
wherein the controller is configured further to:
expose, in each unit cycle, the substrate to the second treatment gas without exposing the substrate to the radicals before the substrate treatment step, and prevent, in each unit cycle, the substrate from being exposed to the radicals and the second treatment gas after the substrate treatment step.
2 . The apparatus of claim 1 ,
wherein the substrate includes a first thin film, and a second thin film having a lower reactivity to the reaction gas than the first thin film.
3 . The apparatus of claim 1 ,
wherein the controller is configured further to output a control signal for controlling a pumping unit connected to the process chamber, so that a pressure inside the process chamber in the preventing of the substrate from being exposed to the radicals and the second treatment gas after the substrate treatment step is lower than a pressure inside the process chamber in the substrate treatment step.
4 . The apparatus of claim 1 ,
wherein the first treatment gas includes NF3, H2, or NH3, and
the second treatment gas includes NH3 or H2.
5 . The apparatus of claim 2 ,
wherein the first thin film includes a silicon oxide film, and
the second thin film includes a silicon nitride film.
6 . The apparatus of claim 1 , further comprising
a showerhead configured to partition the inner space of the process chamber into a reaction gas generation space for generating the reaction gas in which the radicals are mixed with the second treatment gas, and a treatment space for treating the substrate, and having a plurality of distribution holes through which the reaction gas flows from the reaction gas generation space to the treatment space.
7 . The apparatus of claim 1 ,
wherein the process chamber and the plasma chamber contact each other so as to be formed integrally with each other with the ion blocker interposed between the process chamber and the plasma chamber.
8 . The apparatus of claim 1 ,
wherein the plasma chamber includes a remote plasma chamber spaced apart from the process chamber.
9 . The apparatus of claim 1 ,
wherein the ion blocker has a plurality of through-openings through which the radicals generated in the plasma generation space flow into the inner space.
10 . The apparatus of claim 1 ,
wherein the ion blocker is grounded to absorb ions and electrons constituting the plasma of the first treatment gas.
11 . An apparatus for treating a substrate, the apparatus comprising:
a plasma chamber for providing a plasma generation space;
a first treatment gas supply unit connected to the plasma generation space of the plasma chamber and configured to supply a first treatment gas including fluorine to the plasma generation space of the plasma chamber;
a plasma power source for applying a power to excite the first treatment gas supplied to the plasma chamber into a plasma state;
a process chamber provided under the plasma chamber, and having an inner space;
a second treatment gas supply unit connected to the inner space of the process chamber and configured to supply a second treatment gas including ammonia to the inner space of the process chamber;
a support unit for supporting the substrate on which a silicon oxide film and a silicon nitride film are formed in the inner space;
an ion blocker provided between the plasma chamber and the process chamber, configured to absorb ions and electrons constituting plasma of the first treatment gas, and through which fluorine radicals constituting the plasma of the first treatment gas selectively pass downward;
a showerhead configured to partition the inner space into a reaction gas generation space for generating a reaction gas in which the fluorine radicals are mixed with the second treatment gas including the ammonia, and a treatment space for treating the substrate by using the reaction gas, and having a plurality of distribution holes through which the reaction gas flows from the reaction gas generation space to the treatment space; and
a controller configured to output control signals to the plasma power source, the first treatment gas supply unit, and the second treatment gas supply unit to control a timing and flow rate of the first treatment gas and the second treatment gas and control power application of the plasma power source,
wherein the controller is configured further to repeat a unit cycle a predetermined number of times,
wherein the controller is configured further to:
(i) perform, during a process period of each unit cycle, a substrate treatment process of exposing the substrate to the reaction gas, and
(ii) terminate the process period by stopping supply of the first treatment gas and the second treatment gas,
iii) expose, in each unit cycle, the substrate to the second treatment gas without exposing the substrate to the radicals before the performing of the substrate treatment process, and
iv) prevent, in each unit cycle, the substrate from being exposed to the radicals and the second treatment gas after the performing of the substrate treatment process.