Semiconductor device

1. A semiconductor device for testing a device under test, comprising:

a circuit board;

a plurality of probes disposed below the circuit board and facing the device under test;

an integrated substrate disposed between the circuit board and the plurality of probes, the plurality of probes being electrically coupled to the circuit board through the integrated substrate; and

a signal-transmitting module disposed on the circuit board and next to the integrated substrate, wherein the signal-transmitting module transmits a test signal to the plurality of probes through the integrated substrate and the circuit board to perform a test to the device under test,

wherein the integrated substrate comprises:

a first redistribution layer comprising a coarse-pitched circuit layer; and

a second redistribution layer disposed on a side of the first redistribution layer close to the plurality of probes and comprising a fine-pitched circuit layer, wherein the fine-pitched circuit layer is electrically connected to the coarse-pitched circuit layer, wherein a dimension of the coarse-pitched circuit layer is greater than that of the fine-pitched circuit layer.

2. The semiconductor device according to claim 1 , wherein the signal-transmitting module comprises an optical-electrical converter and an optical fiber connected to the optical-electrical converter.

3. The semiconductor device according to claim 1 , wherein the signal-transmitting module comprises a radio frequency component.

4. The semiconductor device according to claim 1 , further comprising:

a power supply component disposed on and electrically connected to the circuit board, wherein the power supply component and the signal-transmitting module are at two opposite sides of the circuit board.

5. The semiconductor device according to claim 1 , wherein the plurality of probes is in contact with the second redistribution layer.

6. The semiconductor device according to claim 1 , wherein the integrated substrate further comprises:

a plurality of third redistribution segments respectively embedded in the second redistribution layer, each of the third redistribution segments comprises an ultra-fine-pitched circuit layer, wherein the ultra-fine-pitched circuit layer is electrically connected to the fine-pitched circuit layer, and the dimension of the fine-pitched circuit layer is greater than a dimension of the ultra-fine-pitched circuit layer.

7. The semiconductor device according to claim 6 , wherein a portion of the plurality of probes is electrically connected to portions of the ultra-fine-pitched circuit layer.

8. The semiconductor device according to claim 1 , further comprising:

a holder body disposed below the circuit board, wherein the plurality of probes penetrates through the holder body.

9. The semiconductor device according to claim 1 , wherein the plurality of probes is integrated with the integrated substrate.

10. The semiconductor device according to claim 1 , wherein the device under test is a semiconductor wafer or a package structure.

11. The semiconductor device according to claim 10 , wherein the package structure comprises a plurality of chips mounted on a substrate, and the plurality of chips comprises:

at least one group of chips comprising at least one processor chip, a plurality of memory chips and at least one optical-electrical chip; and

at least one networking chip connected to the at least one optical-electrical chip in each the at least one group of chips.

12. The semiconductor device according to claim 1 , wherein the integrated substrate is replaceable.