Solid-state imaging sensor
The present technology relates to a solid state imaging sensor that is possible to suppress the reflection of incident light with a wide wavelength band. A reflectance adjusting layer is provided on the substrate in an incident direction of the incident light with respect to the substrate such as Si and configured to adjust reflection of the incident light on the substrate. The reflectance adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer. The first layer includes a concavo-convex structure provided on the substrate and a material which is filled into a concave portion of the concavo-convex structure and has a refractive index lower than that of the substrate, and the second layer includes a material having a refractive index lower than that of the first layer. It is possible to reduce the reflection on the substrate such as Si by using the principle of the interference of the thin film. Such a technology can be applied to solid state imaging sensors.
1. A solid-state imaging sensor, comprising:
a plurality of pixel units;
a substrate including a plurality of photoelectric conversion units;
a first layer including a plurality of concave portions, the first layer disposed over the photoelectric conversion units in a cross sectional view;
a second layer disposed on the first layer;
a third layer disposed on the second layer;
wherein each of the unit pixels includes at least one photoelectric conversion unit and at least first and second concave portions for the at least one photoelectric conversion unit,
wherein the second concave portion is adjacent to the first concave portion in a width direction of the concave portions, and
wherein an interface between the first layer and the second layer includes a flat portion disposed between the first concave portion and the second concave portion.
2. The solid-state imaging sensor according to claim 1 , wherein the substrate includes a first material, wherein the first layer includes the first material and a second material, wherein the second layer includes the second material, and wherein the third layer includes a third material.
3. The solid-state imaging sensor according to claim 2 , wherein the concave portions include the second material.
4. The solid-state imaging sensor according to claim 1 , further including a trench disposed between the plurality of pixel units.
5. The solid-state imaging sensor according to claim 4 , wherein the trench includes the same material as that of the second layer.
6. The solid-state imaging sensor according to claim 4 , further including a light shielding film disposed over the trench.
7. An electronic apparatus, comprising:
an optical system;
a shutter; and
a light detecting device, including:
a plurality of pixel units;
a substrate including a plurality of photoelectric conversion units;
a first layer including a plurality of concave portions, the first layer disposed over the photoelectric conversion units in a cross sectional view;
a second layer disposed on the first layer;
a third layer disposed on the second layer;
wherein each of the unit pixels includes at least one photoelectric conversion unit and at least first and second concave portions for the at least one photoelectric conversion unit,
wherein the second concave portion is adjacent to the first concave portion in a width direction of the concave portions, and
wherein an interface between the first layer and the second layer includes a flat portion disposed between the first concave portion and the second concave portion.