Silicon carbide powder and method for manufacturing silicon carbide ingot using the same
Disclosed are a silicon carbide powder and a method of manufacturing a silicon carbide ingot using the same. More particularly, the silicon carbide powder includes carbon and silicon and has a particle circularity of 0.4 to 0.9 measured through 2D image analysis.
1. A silicon carbide powder, comprising carbon and silicon,
wherein a particle circularity measured through 2D image analysis is 0.4 to 0.9,
wherein a particle curvature measured through the 2D image analysis is 0.8 to 0.99,
wherein a particle elongation measured through the 2D image analysis is 0.7 to 0.95, and
wherein an equivalent circle diameter measured through the 2D image analysis is 150 μm to 3 mm.
2. The silicon carbide powder according to claim 1 , wherein a particle ellipticity measured through the 2D image analysis is 0.92 or more.
3. The silicon carbide powder according to claim 1 , wherein a charge space elongation measured through the 2D image analysis is 0.6 to 0.9.
4. The silicon carbide powder according to claim 1 , wherein a charge space curvature measured through the 2D image analysis is 0.8 to 0.95.
5. The silicon carbide powder according to claim 1 , wherein the equivalent circle diameter measured through the 2D image analysis is 200 μm to 350 μm.
6. The silicon carbide powder according to claim 1 , wherein the equivalent circle diameter measured through the 2D image analysis is 350 μm to 700 μm.
7. The silicon carbide powder according to claim 1 , wherein the equivalent circle diameter measured through the 2D image analysis is 800 μm to 30003500 μm.
8. A method of manufacturing a silicon carbide wafer, the method comprising:
preparing a silicon carbide powder comprising a silicon carbide powder carbon and silicon and having a particle circularity of 0.4 to 0.9 measured through 2D image analysis;
growing a silicon carbide ingot using the silicon carbide powder; and
processing the silicon carbide ingot,
wherein a particle curvature measured through the 2D image analysis is 0.8 to 0.99,
wherein a particle elongation measured through the 2D image analysis is 0.7 to 0.95, and
wherein an equivalent circle diameter measured through the 2D image analysis is 150 μm to 3 mm.
9. The method according to claim 8 , wherein in the growing, the silicon carbide powder is filled in a crucible, wherein the silicon carbide powder filled in the crucible has a porosity of 10 vol % to 50 vol %, and
in the growing, the silicon carbide ingot has a growth rate of 250 μm/hr to 400 μm/hr.