In-line depth measurements by AFM
A method of evaluating a region of interest of a sample with a sample evaluation tool that includes a focused ion beam (FIB) column, a scanning electron microscope (SEM) column, and an atomic force microscope (AFM) instrument, the method comprising: transferring the sample into in a vacuum chamber of the sample evaluation tool; acquiring a plurality of two-dimensional images of the region of interest over a plurality of iterations of a delayering process by: (a) positioning the region of interest under a field of view of the FIB column; (b) milling a layer of material from the region of interest with the FIB column; (c) moving the region of interest under a field of view of the SEM column; (d) imaging the region of interest with the SEM column and measuring a depth of the milled layer in the region of interest with the AFM instrument; and repeating steps (a)-(d) a plurality of times without removing the sample from the vacuum chamber.
1 . A method of evaluating a region of interest of a sample with a sample evaluation tool that includes a focused ion beam (FIB) column, a scanning electron microscope (SEM) column, and an atomic force microscope (AFM) instrument, the method comprising:
transferring the sample into in a vacuum chamber of the sample evaluation tool;
acquiring a plurality of two-dimensional images of the region of interest over a plurality of iterations of a delayering process by:
(a) positioning the region of interest under a field of view of the FIB column;
(b) milling a layer of material from the region of interest with the FIB column;
(c) moving the region of interest under a field of view of the SEM column;
(d) imaging the region of interest with the SEM column and measuring a depth of the milled layer in the region of interest with the AFM instrument; and
repeating steps (a)-(d) a plurality of times without removing the sample from the vacuum chamber.
2 . The method of evaluating a region of interest of a sample set forth in claim 1 further comprising generating a three-dimensional data cube representing the region of interest by stacking the plurality of two-dimensional images on top of each other in an order in which they were acquired.
3 . The method of evaluating a region of interest of a sample set forth in claim 2 wherein a height of each two-dimensional image that is part of the three-dimensional data cube is determined by AFM measurements.
4 . The method of evaluating a region of interest of a sample set forth in claim 1 wherein, during each iteration of the delayering process, milling a layer of material from the region of interest with the FIB column comprises scanning a focused ion beam generated by the FIB column across the region of interest a plurality of times prior to moving the region of interest under the field of view of the SEM column.
5 . The method of evaluating a region of interest of a sample set forth in claim 1 wherein during each iteration of the delayering process, an image of a milled layer is generated with the SEM column immediately prior to measuring a depth of the milled layer with the AFM instrument.
6 . The method of evaluating a region of interest of a sample set forth in claim 1 wherein during each iteration of the delayering process, a depth of the milled layer with the AFM instrument is measured immediately prior to generating an image of a milled layer with the SEM column.
7 . The method of evaluating a region of interest of a sample set forth in claim 2 wherein the step of acquiring a plurality of two-dimensional images of the region of interest further comprising aligning the plurality of two-dimensional images to each other prior to generating the three-dimensional data cube.
8 . The method of evaluating a region of interest of a sample set forth in claim 1 wherein the sample is a semiconductor wafer.
9 . A system for evaluating a region of a sample, the system comprising:
a vacuum chamber;
a focused ion beam (FIB) column configured to direct a charged particle beam into the vacuum chamber toward the sample;
a scanning electron microscope (SEM) column configured to direct a charged particle beam into the vacuum chamber toward the sample;
a sample support configured to hold a sample within the vacuum chamber during a sample evaluation process and move the sample between a field of view of the FIB column and the SEM column;
an atomic force microscope (AFM) instrument configured to measure a height of features on the sample while the sample is positioned on the sample support; and
a processor and a memory coupled to the processor, the memory including a plurality of computer-readable instructions that, when executed by the processor, cause the system to:
transfer the sample into in the vacuum chamber; and
acquire a plurality of two-dimensional images of a region of interest on the sample over a plurality of iterations of a delayering process by:
(a) positioning the region of interest under a field of view of the FIB column;
(b) milling a layer of material from the region of interest with the FIB column;
(c) moving the region of interest under a field of view of the SEM column;
(d) imaging the region of interest with the SEM column and measuring a depth of the milled layer in the region of interest with the AFM instrument; and
repeating steps (a)-(d) a plurality of times without removing the sample from the vacuum chamber.
10 . The system according to claim 9 wherein the computer-readable instructions further comprise instructions for generating a three-dimensional data cube representing the region of interest by stacking the plurality of two-dimensional images on top of each other in an order in which they were acquired.
11 . The system according to claim 10 a height of each two-dimensional image that is part of the three-dimensional data cube is determined by AFM measurements.
12 . The system according to claim 10 wherein acquiring a plurality of two-dimensional images of the region of interest further comprises aligning the plurality of two-dimensional images to each other prior to generating the three-dimensional data cube.
13 . The system according to claim 9 wherein, during each iteration of the delayering process, milling a layer of material from the region of interest with the FIB column comprises scanning a focused ion beam generated by the FIB column across the region of interest a plurality of times prior to moving the region of interest under the field of view of the SEM column.
14 . The system according to claim 9 wherein the sample is a semiconductor wafer.
15 . A non-transitory computer-readable memory that stores a plurality of computer-readable instructions for evaluating a region of interest on a sample by:
transferring the sample into in a vacuum chamber of the sample evaluation tool that includes a focused ion beam (FIB) column, a scanning electron microscope (SEM) column, and an atomic force microscope (AFM) instrument; and
acquiring a plurality of two-dimensional images of the region of interest over a plurality of iterations of a delayering process by:
(a) positioning the region of interest under a field of view of the FIB column;
(b) milling a layer of material from the region of interest with the FIB column;
(c) moving the region of interest under a field of view of the SEM column;
(d) imaging the region of interest with the SEM column and measuring a depth of the milled layer in the region of interest with the AFM instrument; and
repeating steps (a)-(d) a plurality of times without removing the sample from the vacuum chamber.
16 . The non-transitory computer-readable memory set forth in claim 15 wherein the computer-readable instructions for evaluating the region of interest on the sample further comprise instructions for generating a three-dimensional data cube representing the region of interest by stacking the plurality of two-dimensional images on top of each other in an order in which they were acquired.
17 . The non-transitory computer-readable memory set forth in claim 16 wherein a height of each two-dimensional image that is part of the three-dimensional data cube is determined by AFM measurements.
18 . The non-transitory computer-readable memory set forth in claim 15 wherein, during each iteration of the delayering process, milling a layer of material from the region of interest with the FIB column comprises scanning a focused ion beam generated by the FIB column across the region of interest a plurality of times prior to moving the region of interest under the field of view of the SEM column.
19 . The non-transitory computer-readable memory set forth in claim 15 wherein acquiring a plurality of two-dimensional images of the region of interest further comprises aligning the plurality of two-dimensional images to each other prior to generating the three-dimensional data cube.
20 . The non-transitory computer-readable memory set forth in claim 15 wherein the sample is a semiconductor wafer.