INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE HIGH
Structures having backside high voltage capacitors for front side GaN-based devices are described. In an example, an integrated circuit structure includes a front side structure including a GaN-based device layer, and one or more metallization layers above the GaN-based device layer. A backside structure is below and coupled to the GaN-based layer, the backside structure including metal layers and one or more alternating laterally-recessed metal insulator metal capacitors.
1 . An integrated circuit structure, comprising:
a front side structure comprising:
a GaN-based device layer; and
one or more metallization layers above the GaN-based device layer;
a backside structure below and coupled to the GaN-based layer, the backside structure including metal layers and one or more alternating laterally-recessed metal insulator metal capacitors.
2 . The integrated circuit structure of claim 1 , wherein the GaN-based device layer is on a silicon layer of the front side structure.
3 . The integrated circuit structure of claim 2 , wherein the backside structure is coupled to the GaN-based layer by one or more through-silicon vias.
4 . The integrated circuit structure of claim 1 , wherein the front side structure includes one or more metal insulator metal capacitors above the GaN-based device layer.
5 . An integrated circuit structure, comprising:
a front side structure comprising:
a GaN-based device layer;
one or more silicon-based transistors;
one or more metallization layers above the GaN-based device layer and the one or more silicon-based transistors;
a backside structure below and coupled to the GaN-based layer and the one or more silicon-based transistors, the backside structure including metal layers and one or more alternating laterally-recessed metal insulator metal capacitors.
6 . The integrated circuit structure of claim 5 , wherein the one or more silicon-based transistors are one or more fin-based transistors.
7 . The integrated circuit structure of claim 5 , wherein the one or more silicon-based transistors are one or more nano-wire-based transistors.
8 . The integrated circuit structure of claim 5 , wherein the GaN-based device layer is on a silicon layer of the front side structure.
9 . The integrated circuit structure of claim 8 , wherein the backside structure is coupled to the GaN-based layer by one or more through-silicon vias.
10 . The integrated circuit structure of claim 5 , wherein the front side structure includes one or more metal insulator metal capacitors above the GaN-based device layer and the one or more silicon-based transistors.
11 . A computing device, comprising:
a board; and
a component coupled to the board, the component including an integrated circuit structure, comprising:
a front side structure comprising:
a GaN-based device layer; and
one or more metallization layers above the GaN-based device layer;
a backside structure below and coupled to the GaN-based layer, the backside structure including metal layers and one or more alternating laterally-recessed metal insulator metal capacitors.
12 . The computing device of claim 11 , further comprising:
a memory coupled to the board.
13 . The computing device of claim 11 , further comprising:
a communication chip coupled to the board.
14 . The computing device of claim 11 , wherein the component is a packaged integrated circuit die.
15 . The computing device of claim 11 , wherein the component is selected from the group consisting of a processor, a communications chip, and a digital signal processor.
16 . A computing device, comprising:
a board; and
a component coupled to the board, the component including an integrated circuit structure, comprising:
a front side structure comprising:
a GaN-based device layer;
one or more silicon-based transistors;
one or more metallization layers above the GaN-based device layer and the one or more silicon-based transistors;
a backside structure below and coupled to the GaN-based layer and the one or more silicon-based transistors, the backside structure including metal layers and one or more alternating laterally-recessed metal insulator metal capacitors.
17 . The computing device of claim 16 , further comprising:
a memory coupled to the board.
18 . The computing device of claim 16 , further comprising:
a communication chip coupled to the board.
19 . The computing device of claim 16 , wherein the component is a packaged integrated circuit die.
20 . The computing device of claim 16 , wherein the component is selected from the group consisting of a processor, a communications chip, and a digital signal processor.