Granted Patent B2

US 12,230,497 · App. 18/092,219 · Granted Feb 18, 2025

Inventors: Aurélie Kuroda (Chofu, JP); Atsuki Fukazawa (Tama, JP)

Assignee: ASM IP Holding B.V.

H01L21/02274H01L21/02164H01L21/02211

Abstract

Claims (31)

1. A method for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process, the method comprising:

providing a non-planar substrate including one or more horizontal surfaces and one or more vertical surfaces into a reaction chamber;

contacting the non-planar substrate with a vapor phase reactant comprising a silicon component, a carbon component, and a hydrogen component;

contacting the non-planar substrate with a reactive species generated from a plasma produced from a gas comprising an oxygen precursor and a noble gas; and

forming a silicon oxide film either selectively over the horizontal surfaces of the non-planar substrate or selectively over the vertical surfaces of the non-planar substrate.

2. The method of claim 1 , wherein the vapor phase reactant consists essentially of the silicon component, the carbon component, and the hydrogen component.

3. The method of claim 2 , wherein the vapor phase reactant comprises at least one of an alkylsilane, an arylsilane, or an aralkylsilane.

4. The method of claim 1 , wherein the vapor phase reactant further comprises at least one of a nitrogen component, or an oxygen component.

5. The method of claim 4 , wherein the vapor phase reactant comprises at least one of an alkylalkoxysilane, or an alkylaminosilane.

6. The method of claim 1 , wherein the noble gas comprises at least one of argon, nitrogen, or helium.

7. The method of claim 1 , wherein the oxygen precursor comprises at least one of molecular oxygen (O 2 ), carbon dioxide (CO 2 ), or nitrous oxide (N 2 O).

8. The method of claim 1 , wherein the plasma is generated using a parallel plate electrode configuration and a plurality of ions are accelerated anisotropically downward toward the substrate.

9. The method of claim 8 , wherein an ion impingement rate is greater on the horizontal surfaces of the non-planar substrate compared with the vertical surfaces of the non-planar substrate resulting in the topographically selective deposition of the silicon oxide film on the horizontal surfaces of the non-planar substrate compared with the vertical surfaces of the non-planar substrate.

10. The method of claim 9 , wherein the topographical selectivity is greater than 50% for deposition over the horizontal surfaces of the non-planar substrate compared with deposition over the vertical surfaces of the non-planar substrate.

11. The method of claim 9 , wherein the selective deposition of the silicon oxide film on the vertical surfaces of the non-planar substrate comprises a higher carbon content than the silicon oxide film on the horizontal surfaces of the non-planar substrate.

12. The method of claim 11 , wherein the silicon oxide film on the vertical surfaces of the non-planar substrate comprises a silicon oxycarbide, or carbon doped silicon oxide.

13. The method of claim 11 , wherein the silicon oxide film on the vertical surfaces of the non-planar substrate has a lower etch rate than the silicon oxide film on the horizontal surfaces of the non-planar substrate.

14. The method of claim 13 , further comprising contacting the non-planar substrate with an additional reactive species generated from a plasma produced from a gas comprising hydrogen gas and a noble gas, wherein the additional reactive species selectively removes the silicon oxide film on the horizontal surfaces of the non-planar substrate relative to the silicon oxide film on the vertical surfaces of the non-planar substrate.

15. The method of claim 13 , further comprises contacting the non-planar substrate with an etchant to selectively remove the silicon oxide film on horizontal surfaces of the non-planar substrate relative to the silicon oxide film on the vertical surfaces of the non-planar substrate.

16. The method of claim 15 , wherein the topographical selectivity is greater than 50% for the thickness of the silicon oxide film formed over vertical surfaces of the non-planar substrate compared with the thickness of the silicon oxide film formed over the horizontal surfaces of the non-planar substrate.

17. The method of claim 1 , wherein the vapor phase reactant is chemisorbed over both the vertical surfaces of the non-planar substrate and the horizontal surfaces of the non-planar substrate forming at most a monolayer of the vapor phase reactant on the non-planar substrate.

18. The method of claim 1 , wherein the cyclical plasma-enhanced deposition process comprises a plasma-enhanced atomic layer deposition.

19. The method of claim 18 , wherein the plasma-enhanced atomic layer deposition comprises one or more repetitions of a unit deposition cycle, wherein a unit deposition cycle comprises:

contacting the non-planar substrate with the vapor phase reactant;

purging excess vapor phase reactant and reaction by-products;

contacting the non-planar substrate with the reactive species; and

purging excess reactive species and any reaction by-products.

20. The method of claim 19 , wherein the unit deposition cycle further comprises contacting the non-planar substrate with an additional reactive species generated from a plasma produced from a gas comprising hydrogen gas and a noble gas.

21. The method of claim 1 , wherein the step of contacting the non-planar substrate with a reactive species generated from a plasma produced from a gas comprising an oxygen precursor and a noble gas comprises contacting the non-planar substrate with a plurality of ions, including at least oxygen ions, wherein the plurality of ions impinge the non-planar substrate surface.

22. The method of claim 21 , wherein a topographical selectivity is greater than 50% for deposition of the silicon oxide film over the horizontal surfaces of the non-planar substrate compared with deposition of the silicon oxide film over the vertical surfaces of the non-planar substrate.

23. The method of claim 21 , further comprising after the step of forming the silicon oxide film, contacting the silicon oxide film with an etchant to selectively remove the silicon oxide film disposed over horizontal surfaces of the non-planar substrate relative to the silicon oxide film disposed over vertical surfaces of the non-planar substrate.

Assignments (1)

Continuity (3)

References Cited (400)