Optical phase shifter with one or more integrated thermoelectric devices
Structures including an optical phase shifter and methods of forming a structure including an optical phase shifter. The structure comprises an optical phase shifter including a waveguide core having a first branch and a second branch laterally spaced from the first branch. The structure further comprises a thermoelectric device including a first plurality of pillars and a second plurality of pillars that alternate with the first plurality of pillars in a series circuit. The first plurality of pillars and the second plurality of pillars disposed adjacent to the first branch of the waveguide core, the first plurality of pillars comprises an n-type semiconductor material, and the second plurality of pillars comprises a p-type semiconductor material.
1 . A structure comprising:
an optical phase shifter including a waveguide core having a first arm and a second arm laterally spaced from the first arm, the first arm having a first side and a second side opposite from the first side, and the second arm having a third side adjacent to the first side of the first arm and a fourth side opposite from the third side;
a first thermoelectric device including a first plurality of pillars and a second plurality of pillars that alternate with the first plurality of pillars in a first series circuit, the first plurality of pillars and the second plurality of pillars disposed in the first series circuit on the first side and the second side of the first arm of the waveguide core; and
a second thermoelectric device including a third plurality of pillars and a fourth plurality of pillars that alternate with the third plurality of pillars in a second series circuit, the third plurality of pillars and the fourth plurality of pillars of the second thermoelectric device disposed in the second series circuit on the third side and the fourth side of the second arm of the waveguide core,
wherein the first plurality of pillars and the third plurality of pillars comprise an n-type semiconductor material, and the second plurality of pillars and the fourth plurality of pillars comprising a p-type semiconductor material.
2 . The structure of claim 1 further comprising:
a first power supply coupled to the first series circuit, the first power supply configured to supply a current to the first plurality of pillars and the second plurality of pillars of the first thermoelectric device to generate heat for elevating a temperature of the first branch arm of the waveguide core.
3 . The structure of claim 2 further comprising:
a second power supply coupled to the second series circuit, the second power supply configured to supply a current to the first plurality of pillars and the second plurality of pillars of the second thermoelectric device to extract heat for cooling the second arm of the waveguide core.
4 . The structure of claim 1 wherein the n-type semiconductor material comprises bismuth telluride, and the p-type semiconductor material comprises antimony telluride.
5 . The structure of claim 1 wherein the n-type semiconductor material comprises n-type silicon, and the p-type semiconductor material comprises p-type polycrystalline silicon or p-type polycrystalline silicon-germanium.
6 . The structure of claim 1 further comprising:
a power supply coupled to the first series circuit, the power supply configured to supply a current to the first plurality of pillars and the second plurality of pillars to generate heat for elevating a temperature of the first arm of the waveguide core.
7 . The structure of claim 1 further comprising:
a power supply coupled to the first series circuit, the power supply configured to supply a current to the first plurality of pillars and the second plurality of pillars to extract heat for cooling the first arm of the waveguide core.
8 . The structure of claim 1 wherein the first plurality of pillars and the second plurality of pillars are arranged in a plurality of adjacent pairs, and further comprising:
a plurality of silicide layers, each silicide layer connecting one of the plurality of adjacent pairs of the first plurality of pillars and the second plurality of pillars.
9 . The structure of claim 8 further comprising:
a semiconductor substrate; and
a dielectric layer on the semiconductor substrate, the dielectric layer positioned between the plurality of silicide layers and the semiconductor substrate.
10 . The structure of claim 8 further comprising:
a semiconductor substrate; and
a dielectric layer on the semiconductor substrate,
wherein the plurality of silicide layers are positioned between the dielectric layer and the plurality of adjacent pairs of the first plurality of pillars and the second plurality of pillars.
11 . The structure of claim 8 wherein the first arm has a portion that is lengthwise aligned with a longitudinal axis, and each silicide layer is either aligned parallel to the longitudinal axis or extends across the first arm in a direction transverse to the longitudinal axis.
12 . The structure of claim 1 further comprising:
a dielectric layer on the waveguide core,
wherein the waveguide core is embedded in the dielectric layer, and the first plurality of pillars and the second plurality of pillars are disposed on the dielectric layer over the first arm of the waveguide core.
13 . The structure of claim 12 wherein the optical phase shifter includes a first doped region and a second doped region, the waveguide core is positioned in a lateral direction between the first doped region and the second doped region, each of the first plurality of pillars overlaps with either the first doped region or the second doped region, and each of the second plurality of pillars overlaps with either the first doped region or the second doped region.
14 . The structure of claim 1 further comprising:
a dielectric layer on the waveguide core, the first plurality of pillars, and the second plurality of pillars,
wherein the waveguide core, the first plurality of pillars, and the second plurality of pillars are embedded in the dielectric layer.
15 . The structure of claim 14 wherein the optical phase shifter includes a first doped region and a second doped region, the first plurality of pillars and the second plurality of pillars are arranged in a plurality of adjacent pairs, and further comprising:
a plurality of silicide layers, each silicide layer connecting one of the plurality of adjacent pairs of the first plurality of pillars and the second plurality of pillars.
16 . The structure of claim 15 wherein the first doped region and the second doped region are disposed in a lateral direction between the plurality of silicide layers and the waveguide core.
17 . The structure of claim 1 further comprising:
a semiconductor substrate; and
a dielectric layer on the semiconductor substrate,
wherein the dielectric layer is positioned between the first plurality of pillars and the semiconductor substrate, and the dielectric layer is positioned between the second plurality of pillars and the semiconductor substrate.
18 . The structure of claim 17 wherein the first plurality of pillars and the second plurality of pillars are disposed directly on the dielectric layer.
19 . The structure of claim 1 wherein the first arm diverges from the second arm at an input to the optical phase shifter, and the first arm converges with the second arm at an output from the optical phase shifter.
20 . A method comprising:
forming an optical phase shifter including a waveguide core having a first arm and a second arm laterally spaced from the first arm, wherein the first arm has a first side and a second side opposite from the first side, and the second arm has a third side adjacent to the first side of the first arm and a fourth side opposite from the third side;
forming a first thermoelectric device including a first plurality of pillars and a second plurality of pillars that alternate with the first plurality of pillars in a series circuit, wherein the first plurality of pillars and the second plurality of pillars are disposed in the series circuit on the first side and the second side of the first arm of the waveguide core, the first plurality of pillars comprise an n-type semiconductor material, and the second plurality of pillars comprise a p-type semiconductor material; and
forming a second thermoelectric device including a third plurality of pillars and a fourth plurality of pillars that alternate with the third plurality of pillars in a second series circuit, wherein the third plurality of pillars and the fourth plurality of pillars of the second thermoelectric device are disposed in the second series circuit on the third side and the fourth side of the second arm of the waveguide core, the third plurality of pillars comprise the n-type semiconductor material, and the fourth plurality of pillars comprise the p-type semiconductor material.