Display device and method of manufacturing the display device
A display device includes a first conductive layer; a first insulating layer on the first conductive layer; a semiconductor layer disposed on the first insulating layer and electrically connected to the first conductive layer; a second conductive layer disposed on the semiconductor layer and electrically connected to the first conductive layer; and light emitting elements on the second conductive layer. A thickness of a part of the first insulating layer in a first area, which overlaps the semiconductor layer in a plan view, is different from a thickness of another part of the first insulating layer in a second area, which is exposed by the semiconductor layer.
1 . A display device comprising:
a substrate;
a first conductive layer;
a first insulating layer on the first conductive layer and on the substrate;
a semiconductor layer on the first insulating layer and electrically connected to the first conductive layer;
a second conductive layer on the semiconductor layer and electrically connected to the first conductive layer; and
light-emitting elements on the second conductive layer,
wherein a first distance between a first part of a top surface of the first insulating layer and the substrate in a first area, the first part of the top surface of the first insulating layer overlapping the semiconductor layer in a plan view, is different from a second distance between a second part of the top surface of the first insulating layer and the substrate in a second area, the second part of the top surface of the first insulating layer being exposed by the semiconductor layer, the first distance and the second distance being along a thickness direction of the substrate; and
wherein the second conductive layer is directly on the first insulating layer in the second area such that the second conductive layer directly contacts the second part of the top surface of the first insulating layer exposed by the semiconductor layer.
2 . The display device of claim 1 , wherein the semiconductor layer is in electrical contact with the first conductive layer through a first contact hole defined in the first insulating layer in the first area.
3 . The display device of claim 1 , wherein the second conductive layer is in electrical contact with the first conductive layer through a second contact hole defined in the first insulating layer in the second area.
4 . The display device of claim 1 , wherein the first distance is greater than the second distance.
5 . The display device of claim 1 , further comprising a second insulating layer on the semiconductor layer.
6 . The display device of claim 5 , wherein the second insulating layer is in the first area and exposes the second area.
7 . The display device of claim 5 , wherein the second conductive layer is directly on the second insulating layer in the first area.
8 . The display device of claim 1 , further comprising:
a first connection electrode on first end portions of the light-emitting elements; and
a second connection electrode on second end portions of the light-emitting elements.
9 . The display device of claim 8 , wherein the first connection electrode and the second connection electrode are at a same layer.
10 . A method of manufacturing a display device, the method comprising:
forming a first insulating layer on a first conductive layer;
forming a semiconductor layer on a first area of the first insulating layer;
forming a second insulating layer on the semiconductor layer;
etching a second area of the first insulating layer, which is exposed by the semiconductor layer;
forming a second conductive layer directly on the second area of the first insulating layer and directly on the second insulating layer; and
providing light-emitting elements on the second conductive layer.
11 . The method of claim 10 , further comprising forming a first contact hole in the first area of the first insulating layer.
12 . The method of claim 11 , wherein the forming of the first contact hole further comprises partially etching the second area of the first insulating layer.
13 . The method of claim 11 , wherein the semiconductor layer is in electrical contact with the first conductive layer through the first contact hole.
14 . The method of claim 10 , further comprising forming a second contact hole in the second area of the first insulating layer.
15 . The method of claim 14 , wherein the second conductive layer is in electrical contact with the first conductive layer through the second contact hole.
16 . The method of claim 10 , further comprising etching the semiconductor layer and the second insulating layer.
17 . The method of claim 10 , further comprising:
forming a first connection electrode on first end portions of the light-emitting elements; and
forming a second connection electrode on second end portions of the light-emitting elements.
18 . The method of claim 17 , wherein the first connection electrode and the second connection electrode are simultaneously formed through a same process.