POWER SEMICONDUCTOR DEVICES HAVING NON-RECTANGULAR SEMICONDUCTOR DIE FOR ENHANCED MECHANICAL ROBUSTNESS AND REDUCED STRESS AND ELECTRIC FIELD CONCENTRATIONS
Semiconductor devices comprises a semiconductor die that comprises a substrate that has a hexagonal crystal structure. First and second sides of the semiconductor die extend along respective first and second crystallographic axes of the hexagonal crystal structure of the substrate.
1 . A semiconductor device, comprising:
a semiconductor die that comprises a substrate that has a hexagonal crystal structure,
wherein first and second sides of the semiconductor die extend along respective first and second crystallographic axes of the hexagonal crystal structure of the substrate.
2 . The semiconductor device of claim 1 , wherein the first side and the second side meet to define an interior angle that is an obtuse angle.
3 . (canceled)
4 . The semiconductor device of claim 1 , wherein the semiconductor die has a hexagon shape when viewed in plan view.
5 . (canceled)
6 . The semiconductor device of claim 1 , wherein the semiconductor die has a hexagon shape with beveled corners when viewed in plan view.
7 . (canceled)
8 . The semiconductor device of claim 1 , wherein the semiconductor die comprises a MOSFET that comprises an active region that comprises a plurality of unit cell transistors, and wherein a gate runner of the MOSFET comprises first and second segments that connect at an obtuse angle.
9 . The semiconductor device of claim 8 , wherein the first and second segments of the gate runner each extend along a periphery of the active region, and wherein a gate pad of the MOSFET is located in a center of the active region, and wherein the gate runner comprises a plurality of additional segments that extend outwardly from the gate pad.
10 . (canceled)
11 . The semiconductor device of claim 1 , wherein the semiconductor die comprises a MOSFET that comprises an active region that comprises a plurality of unit cell transistors, and wherein a gate runner of the MOSFET comprises first and second segments that connect at an angle of between 115° and 125°.
12 . The semiconductor device of claim 1 , wherein the semiconductor die has a polygonal shape when viewed in plan view, wherein corners of the polygonal shape define interior angles that exceed 90°.
13 - 14 . (canceled)
15 . A semiconductor device, comprising:
a semiconductor die
wherein the semiconductor die comprises at least five sides when viewed in plan view.
16 . The semiconductor device of claim 15 , wherein the semiconductor die comprises a semiconductor layer that has a hexagonal crystal structure.
17 . The semiconductor device of claim 16 , wherein the semiconductor die has a hexagon shape when viewed in plan view.
18 . (canceled)
19 . The semiconductor device of claim 17 , wherein the semiconductor die has a hexagon shape with beveled corners when viewed in plan view.
20 . The semiconductor device of claim 16 , wherein at least three of the sides of the semiconductor die extend along crystallographic axes of the hexagonal crystal structure of the semiconductor layer.
21 . (canceled)
22 . The semiconductor device of claim 16 , wherein the semiconductor die comprises a MOSFET that comprises an active region that comprises a plurality of unit cell transistors, and
wherein a gate runner of the MOSFET comprises first and second segments that connect at an obtuse angle.
23 . The semiconductor device of claim 22 , wherein the obtuse angle is an angle of 120°.
24 - 25 . (canceled)
26 . The semiconductor device of claim 16 , wherein the semiconductor die has a polygonal shape when viewed in plan view, wherein corners of the polygonal shape define interior angles that exceed 90°.
27 - 28 . (canceled)
29 . A semiconductor device, comprising:
a semiconductor die, wherein, when viewed in plan view, the semiconductor die has a polygonal shape with corners that define interior angles that exceed 90 º.
30 . The semiconductor device of claim 29 , wherein the semiconductor die comprises a semiconductor layer that has a hexagonal crystal structure.
31 . The semiconductor device of claim 30 , wherein the polygonal shape is a hexagon.
32 . (canceled)
33 . The semiconductor device of claim 30 , wherein at least two sides of the semiconductor die extend along crystallographic axes of the hexagonal crystal structure of the semiconductor layer.
34 . (canceled)
35 . The semiconductor device of claim 30 , wherein the semiconductor die comprises a MOSFET that an active region that comprises a plurality of unit cell transistors, and
wherein a gate runner of the MOSFET comprises first and second segments that connect at an obtuse angle.
36 . The semiconductor device of claim 35 , wherein the obtuse angle is an angle of 120°.
37 . The semiconductor device of claim 35 , wherein the first and second segments of the gate runner each extend along a periphery of the active region.
38 . The semiconductor device of claim 37 , wherein a gate pad of the MOSFET is located in a center of the active region, and wherein the gate runner comprises a plurality of additional segments that extend radially outwardly from the gate pad.
39 - 66 . (canceled)