Liquid crystal display device and electronic device
To provide a semiconductor device, a liquid crystal display device, and an electronic device which have a wide viewing angle and in which the number of manufacturing steps, the number of masks, and manufacturing cost are reduced compared with a conventional one. The liquid crystal display device includes a first electrode formed over an entire surface of one side of a substrate; a first insulating film formed over the first electrode; a thin film transistor formed over the first insulating film; a second insulating film formed over the thin film transistor; a second electrode formed over the second insulating film and having a plurality of openings; and a liquid crystal over the second electrode. The liquid crystal is controlled by an electric field between the first electrode and the second electrode.
1. A semiconductor device comprising:
a common electrode over a first substrate;
a first conductive layer over the first substrate, the first conductive layer electrically connected to the common electrode;
a semiconductor layer over the first substrate, the semiconductor layer comprising polycrystalline silicon;
a gate wiring, a part of the gate wiring overlapping with the semiconductor layer;
a source wiring, a part of the source wiring being over and in contact with the semiconductor layer;
a second conductive layer over and in contact with the semiconductor layer;
an insulating film over the common electrode, the first conductive layer, and the second conductive layer;
a pixel electrode over the insulating film, the pixel electrode electrically connected to the second conductive layer; and
liquid crystal molecules over the common electrode and the pixel electrode,
wherein the first conductive layer, the source wiring, and the second conductive layer comprise a same material,
wherein the pixel electrode has a plurality of slits,
wherein the part of the gate wiring and a first region of the common electrode overlap with each other, and
wherein the source wiring and a second region of the common electrode overlap with each other.
2. The semiconductor device according to claim 1 , wherein the gate wiring comprises molybdenum.
3. The semiconductor device according to claim 1 , wherein the insulating film comprises silicon nitride.
4. The semiconductor device according to claim 1 , wherein each of the first conductive layer, the source wiring, and the second conductive layer has a stacked-layer structure comprising a layer containing aluminum interposed between layers containing one of molybdenum and titanium.
5. The semiconductor device according to claim 1 , further comprising:
a color filter over the liquid crystal molecules; and
a second substrate over the color filter.
6. The semiconductor device according to claim 1 , wherein the common electrode is arranged for a plurality of pixels.
7. A semiconductor device comprising:
a common electrode over a first substrate;
a first conductive layer over the first substrate, the first conductive layer electrically connected to the common electrode;
a semiconductor layer over the first substrate, the semiconductor layer comprising polycrystalline silicon;
a gate wiring, a part of the gate wiring overlapping with the semiconductor layer;
a source wiring, a part of the source wiring being over and in contact with the semiconductor layer;
a second conductive layer over and in contact with the semiconductor layer;
an insulating film over the common electrode, the first conductive layer, and the second conductive layer;
a pixel electrode over the insulating film, the pixel electrode electrically connected to the second conductive layer; and
liquid crystal molecules over the common electrode and the pixel electrode,
wherein the first conductive layer, the source wiring, and the second conductive layer comprise a same material,
wherein the pixel electrode has a plurality of slits,
wherein the part of the gate wiring and a first region of the common electrode overlap with each other,
wherein the source wiring and a second region of the common electrode overlap with each other, and
wherein the pixel electrode with the plurality of slits and a third region of the common electrode overlap with each other.
8. The semiconductor device according to claim 7 , wherein the gate wiring comprises molybdenum.
9. The semiconductor device according to claim 7 , wherein the insulating film comprises silicon nitride.
10. The semiconductor device according to claim 7 , wherein each of the first conductive layer, the source wiring, and the second conductive layer has a stacked-layer structure comprising a layer containing aluminum interposed between layers containing one of molybdenum and titanium.
11. The semiconductor device according to claim 7 , further comprising:
a color filter over the liquid crystal molecules; and
a second substrate over the color filter.
12. The semiconductor device according to claim 7 , wherein the common electrode is arranged for a plurality of pixels.
13. A semiconductor device comprising:
a common electrode over a first substrate;
a first conductive layer over the first substrate, the first conductive layer electrically connected to the common electrode;
a semiconductor layer over the first substrate, the semiconductor layer comprising polycrystalline silicon;
a gate wiring, a part of the gate wiring overlapping with the semiconductor layer;
a source wiring, a part of the source wiring being over and in contact with the semiconductor layer;
a second conductive layer over and in contact with the semiconductor layer;
an insulating film over the common electrode, the first conductive layer, and the second conductive layer;
a pixel electrode over the insulating film, the pixel electrode electrically connected to the second conductive layer; and
liquid crystal molecules over the common electrode and the pixel electrode,
wherein the first conductive layer, the source wiring, and the second conductive layer comprise a same material,
wherein the pixel electrode has a plurality of slits,
wherein the part of the gate wiring and a first region of the common electrode overlap with each other,
wherein the source wiring and a second region of the common electrode overlap with each other, and
wherein each of the common electrode and the pixel electrode comprises a light-transmitting conductive layer.
14. The semiconductor device according to claim 13 , wherein each of the common electrode and the pixel electrode comprises indium tin oxide.
15. The semiconductor device according to claim 13 , wherein the gate wiring comprises molybdenum.
16. The semiconductor device according to claim 13 , wherein the insulating film comprises silicon nitride.
17. The semiconductor device according to claim 13 , wherein each of the first conductive layer, the source wiring, and the second conductive layer has a stacked-layer structure comprising a layer containing aluminum interposed between layers containing one of molybdenum and titanium.
18. The semiconductor device according to claim 13 , further comprising:
a color filter over the liquid crystal molecules; and
a second substrate over the color filter.
19. The semiconductor device according to claim 13 , wherein the common electrode is arranged for a plurality of pixels.