Granted Patent B2

US 12,740,152 · App. 19/029,162 · Granted Sep 15, 2026

Inventors: Shunpei Yamazaki (Setagaya, JP); Jun Koyama (Sagamihara, JP); Masashi Tsubuku (Atsugi, JP); Kosei Noda (Atsugi, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

H10D86/60G09G3/20G09G3/2092G09G3/3291G09G3/36G11C19/184G11C19/28H03K17/161H03K19/00315H03K19/096H10D30/6755H10D86/421H10D86/423H10D86/441H10D86/481G09G3/3233G09G3/3648G09G2300/0439G09G2300/08G09G2300/0842G09G2310/0267G09G2310/0275G09G2310/0286G09G2310/08

Abstract

Claims (24)

1 . A semiconductor device comprising:

a first transistor comprising an oxide semiconductor layer including a channel formation region comprising a crystal,

wherein an off current is 1×10 −17 A or less per micrometer in channel width in the first transistor when a source-drain voltage is 1V.

2 . The semiconductor device according to claim 1 ,

wherein the oxide semiconductor layer is an In—Ga—Zn—O-based layer, an In—Sn—Zn—O-based layer, a Sn—Ga—Zn—O-based layer, an Al—Ga—Zn—O-based layer, a Sn—Al—Zn—O-based layer, an In—Zn—O-based layer, an In—Sn—O-based layer, a Sn—Zn—O-based layer, an Al—Zn—O-based layer, an In—O-based layer, a Sn—O-based layer, or a Zn—O-based layer.

3 . The semiconductor device according to claim 1 ,

wherein the oxide semiconductor layer has a hydrogen concentration measured by secondary ion mass spectrometry of 5×10 19 /cm 3 or less.

4 . A semiconductor device comprising:

a first transistor comprising an oxide semiconductor layer including a channel formation region comprising a crystal,

wherein an off current is 1×10 −16 A or less per micrometer in channel width in the first transistor when a substrate on which the first transistor is located is 120° C.

5 . The semiconductor device according to claim 4 ,

wherein the oxide semiconductor layer is an In—Ga—Zn—O-based layer, an In—Sn—Zn—O-based layer, a Sn—Ga—Zn—O-based layer, an Al—Ga—Zn—O-based layer, a Sn—Al—Zn—O-based layer, an In—Zn—O-based layer, an In—Sn—O-based layer, a Sn—Zn—O-based layer, an Al—Zn—O-based layer, an In—O-based layer, a Sn—O-based layer, or a Zn—O-based layer.

6 . The semiconductor device according to claim 4 ,

wherein the oxide semiconductor layer has a hydrogen concentration measured by secondary ion mass spectrometry of 5×10 19 /cm 3 or less.

7 . A semiconductor device comprising:

a first transistor, a second transistor, and a capacitor;

wherein one of a source and a drain of the first transistor is electrically connected to a gate of the second transistor,

wherein one electrode of the capacitor is electrically connected to the gate of the second transistor,

wherein the first transistor comprises an oxide semiconductor layer including a channel formation region comprising a crystal, and

wherein an off current is 1×10 −17 A or less per micrometer in channel width in the first transistor when a source-drain voltage is 1V.

8 . The semiconductor device according to claim 7 ,

wherein the oxide semiconductor layer is an In—Ga—Zn—O-based layer, an In—Sn—Zn—O-based layer, a Sn—Ga—Zn—O-based layer, an Al—Ga—Zn—O-based layer, a Sn—Al—Zn—O-based layer, an In—Zn—O-based layer, an In—Sn—O-based layer, a Sn—Zn—O-based layer, an Al—Zn—O-based layer, an In—O-based layer, a Sn—O-based layer, or a Zn—O-based layer.

9 . The semiconductor device according to claim 7 ,

wherein the oxide semiconductor layer has a hydrogen concentration measured by secondary ion mass spectrometry of 5×10 19 /cm 3 or less.

Priority Claims (1)

Continuity (10)

References Cited (400)