Semiconductor device and display device
A thin film transistor whose threshold voltage can be controlled and which has a favorable switching characteristic is provided. The thin film transistor includes a first gate electrode layer; a semiconductor layer; a first gate insulating layer provided between the first gate electrode layer and the semiconductor layer; source electrode and drain electrode layers which are provided over the semiconductor layer; a conductive layer covered by the first gate insulating layer and the semiconductor layer and provided so as to overlap with part of the first gate electrode layer; a second gate insulating layer provided so as to cover at least a back channel portion of the semiconductor layer; and a second gate electrode layer provided over the second gate insulating layer so as to overlap with the back channel portion of the semiconductor layer.
1. A semiconductor device comprising:
a first gate electrode layer over a substrate;
a first gate insulating layer over the first gate electrode layer;
a conductive layer over and in contact with the first gate insulating layer, the conductive layer overlapping the first gate electrode layer;
a semiconductor layer over the conductive layer and the first gate insulating layer;
a source electrode layer over the semiconductor layer, the source electrode layer overlapping a first portion of the first gate electrode layer;
a drain electrode layer over the semiconductor layer, the drain electrode layer overlapping a second portion of the first gate electrode layer;
a second gate insulating layer over the semiconductor layer; and
a second gate electrode layer over the second gate insulating layer, the second gate electrode layer overlapping a third portion of the first gate electrode layer between the first portion and the second portion,
wherein the semiconductor layer is in contact with the first gate insulating layer over the third portion of the first gate electrode layer.
2. The semiconductor device according to claim 1 , wherein one of the source electrode and drain electrode layers overlaps the conductive layer, and the other of the source electrode and drain electrode layers does not overlap the conductive layer.
3. A display device comprising the semiconductor device according to claim 1 .
4. The display device according to claim 3 , wherein the second gate electrode layer is the same layer as a pixel electrode layer.
5. The display device according to claim 4 , wherein the pixel electrode layer is formed from a material having a light-transmitting property.
6. A semiconductor device comprising:
a first gate electrode layer over a substrate;
a first gate insulating layer over the first gate electrode layer;
a first conductive layer over the first gate insulating layer, the first conductive layer overlapping a first portion of the first gate electrode layer;
a second conductive layer over the first gate insulating layer, the second conductive layer overlapping a second portion of the first gate electrode layer;
a semiconductor layer over the first and second conductive layers and the first gate insulating layer;
a source electrode layer over the semiconductor layer;
a drain electrode layer over the semiconductor layer;
a second gate insulating layer over the semiconductor layer; and
a second gate electrode layer over the second gate insulating layer, the second gate electrode layer overlapping a third portion of the first gate electrode layer between the first portion and the second portion,
wherein the semiconductor layer is in contact with the first gate insulating layer over the third portion of the first gate electrode layer.
7. A display device comprising the semiconductor device according to claim 6 .
8. The display device according to claim 7 , wherein the second gate electrode layer is the same layer as a pixel electrode layer.
9. The display device according to claim 8 , wherein the pixel electrode layer is formed from a material having a light-transmitting property.