Semiconductor device having an oxide semiconductor layer comprising a nanocrystal
In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced.
1. A semiconductor device comprising:
a gate electrode layer;
a gate insulating layer over the gate electrode layer;
an oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer comprising:
a first region;
a second region;
a third region between the first region and the second region;
a fourth region between the first region and the third region; and
a fifth region between the second region and the third region;
a first insulating layer over the oxide semiconductor layer, the first insulating layer comprising oxygen;
a source electrode layer over the oxide semiconductor layer; and
a drain electrode layer over the oxide semiconductor layer,
wherein the first region is in contact with the source electrode layer,
wherein the second region is in contact with the drain electrode layer,
wherein the third region is in contact with the first insulating layer,
wherein the fourth region has a thickness less than the third region,
wherein the fifth region has a thickness less than the third region, and
wherein the oxide semiconductor layer comprises a nanocrystal.
2. The semiconductor device according to claim 1 ,
wherein the source electrode layer and the drain electrode layer comprise titanium.
3. The semiconductor device according to claim 1 ,
wherein the first insulating layer further comprises silicon.
4. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor layer comprises indium.
5. The semiconductor device according to claim 1 ,
wherein the thickness of the fourth region is less than the first region and the second region, and
wherein the thickness of the fifth region is less than the first region and the second region.
6. The semiconductor device according to claim 1 , further comprising a second insulating layer over the oxide semiconductor layer, the first insulating layer, the source electrode layer and the drain electrode layer,
wherein the second insulating layer is in contact with the fourth region of the oxide semiconductor layer and the fifth region of the oxide semiconductor layer.
7. The semiconductor device according to claim 6 ,
wherein the second insulating layer comprises oxygen.
8. A semiconductor device comprising:
a gate electrode layer;
a gate insulating layer over the gate electrode layer;
an oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer comprising:
a first region;
a second region;
a third region between the first region and the second region;
a fourth region between the first region and the third region; and
a fifth region between the second region and the third region;
a first insulating layer over the oxide semiconductor layer, the first insulating layer comprising oxygen;
a source electrode layer over the oxide semiconductor layer; and
a drain electrode layer over the oxide semiconductor layer,
wherein the first region is in contact with the source electrode layer,
wherein the second region is in contact with the drain electrode layer,
wherein the third region is in contact with the first insulating layer,
wherein the fourth region has a thickness less than the third region,
wherein the fifth region has a thickness less than the third region,
wherein the oxide semiconductor layer comprises a nanocrystal, and
wherein a size of the nanocrystal is greater than or equal to 1 nm and less than or equal to 20 nm.
9. The semiconductor device according to claim 8 ,
wherein the source electrode layer and the drain electrode layer comprise titanium.
10. The semiconductor device according to claim 8 ,
wherein the first insulating layer further comprises silicon.
11. The semiconductor device according to claim 8 ,
wherein the oxide semiconductor layer comprises indium.
12. The semiconductor device according to claim 8 ,
wherein the thickness of the fourth region is less than the first region and the second region, and
wherein the thickness of the fifth region is less than the first region and the second region.
13. The semiconductor device according to claim 8 , further comprising a second insulating layer over the oxide semiconductor layer, the first insulating layer, the source electrode layer and the drain electrode layer,
wherein the second insulating layer is in contact with the fourth region of the oxide semiconductor layer and the fifth region of the oxide semiconductor layer.
14. The semiconductor device according to claim 13 ,
wherein the second insulating layer comprises oxygen.