Granted Patent B2

US 12,243,943 · App. 18/207,176 · Granted Mar 4, 2025

Inventors: Takahiro Sato (Tochigi, JP); Yasutaka Nakazawa (Tochigi, JP); Takayuki Cho (Tochigi, JP); Shunsuke Koshioka (Tochigi, JP); Hajime Tokunaga (Yokohama, JP); Masami Jintyou (Shimotsuga, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

H01L29/7869G02F1/136277G02F1/1368H01L21/02365H01L21/02403H01L21/02422H01L21/02551H01L21/02554H01L21/02565H01L21/02631H01L21/30604H01L21/465H01L27/1225H01L27/1259H01L29/045H01L29/0657H01L29/1033H01L29/24H01L29/42356H01L29/66742H01L29/66969H01L29/786H01L29/78603H01L29/78693H01L29/78696H10K59/123

Abstract

Claims (35)

1. A semiconductor device comprising:

a first transistor including silicon in a channel formation region;

a second transistor over the first transistor, the second transistor including a first gate electrode, a first insulating film over the first gate electrode, an oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, and a second gate electrode over the second insulating film;

a third insulating film and a fourth insulating film over the second transistor; and

a first wiring over the fourth insulating film, the first wiring being electrically connected to a gate electrode of the first transistor and to the oxide semiconductor film via a first opening in the first insulating film, a second opening in the second insulating film, a third opening in the third insulating film, and a fourth opening in the fourth insulating film,

wherein, in a cross-sectional view, the gate electrode of the first transistor and the oxide semiconductor film do not overlap with each other,

wherein the oxide semiconductor film comprises a channel formation region of the second transistor,

wherein, in the cross-sectional view, the first wiring overlaps with the channel formation region of the first transistor, and

wherein, in the cross-sectional view, the first wiring does not overlap with the channel formation region of the second transistor.

2. A semiconductor device comprising:

a first transistor including silicon in a channel formation region;

a second transistor over the first transistor, the second transistor including a first gate electrode, a first insulating film over the first gate electrode, an oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, and a second gate electrode over the second insulating film;

a third insulating film and a fourth insulating film over the second transistor;

a first wiring over the fourth insulating film, the first wiring being electrically connected to a gate electrode of the first transistor and to the oxide semiconductor film via a first opening in the first insulating film, a second opening in the second insulating film, a third opening in the third insulating film, and a fourth opening in the fourth insulating film; and

a second wiring electrically connected to the channel formation region of the first transistor,

wherein, in a cross-sectional view, the gate electrode of the first transistor and the oxide semiconductor film do not overlap with each other,

wherein the second wiring and the oxide semiconductor film overlap with each other,

wherein the oxide semiconductor film comprises a channel formation region of the second transistor,

wherein, in the cross-sectional view, the first wiring overlaps with the channel formation region of the first transistor,

wherein, in the cross-sectional view, the first wiring does not overlap with the channel formation region of the second transistor, and

wherein a region of the first wiring in contact with a top surface of the fourth insulating film overlaps with the gate electrode of the first transistor.

3. A semiconductor device comprising:

a first transistor including silicon in a channel formation region;

a second transistor over the first transistor, the second transistor including a first gate electrode, a first insulating film over the first gate electrode, an oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, and a second gate electrode over the second insulating film;

a third insulating film and a fourth insulating film over the second transistor;

a first wiring over the fourth insulating film;

a semiconductor film over the first insulating film; and

a conductive film electrically connected to the semiconductor film and the oxide semiconductor film,

wherein, in a cross-sectional view, a gate electrode of the first transistor and the oxide semiconductor film do not overlap with each other,

wherein, in the cross-sectional view, the gate electrode of the first transistor does not overlap with the first gate electrode of the second transistor,

wherein the oxide semiconductor film comprises a channel formation region of the second transistor,

wherein, in the cross-sectional view, the first wiring overlaps with the channel formation region of the first transistor,

wherein a region of the first wiring in contact with a top surface of the fourth insulating film overlaps with the gate electrode of the first transistor,

wherein the conductive film is configured to function as one of a source electrode and a drain electrode of the second transistor, and

wherein the conductive film is in direct contact with the semiconductor film and the oxide semiconductor film.

Priority Claims (1)

Continuity (8)

References Cited (400)