Method for manufacturing semiconductor device and method for manufacturing liquid crystal display panel
An embodiment is a semiconductor device which includes a first oxide semiconductor layer over a substrate having an insulating surface and including a crystalline region formed by growth from a surface of the first oxide semiconductor layer toward an inside; a second oxide semiconductor layer over the first oxide semiconductor layer; a source electrode layer and a drain electrode layer which are in contact with the second oxide semiconductor layer; a gate insulating layer covering the second oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer and in a region overlapping with the second oxide semiconductor layer. The second oxide semiconductor layer is a layer including a crystal formed by growth from the crystalline region.
1. A method for manufacturing a semiconductor device comprising the steps of:
a first step of forming a gate electrode layer over a substrate;
a second step of forming a first insulating layer over the gate electrode layer;
a third step of forming an oxide semiconductor layer over the first insulating layer, the oxide semiconductor layer overlapping with the gate electrode layer and containing In, Ga, and Zn;
a fourth step of performing a first heat treatment at a temperature higher than or equal to 450° C. and lower than or equal to 850° C. in a dry air atmosphere at a dew point lower than or equal to −40° C.;
a fifth step of forming a source electrode layer and a drain electrode layer which overlap with the oxide semiconductor layer;
a sixth step of forming a second insulating layer over the source electrode layer and the drain electrode layer, the second insulating layer being in contact with the oxide semiconductor layer; and
a seventh step of performing a second heat treatment at a temperature higher than or equal to 200° C. and lower than or equal to 400° C.,
wherein the second insulating layer is an oxide film.
2. A method for manufacturing a liquid crystal display panel including a transistor comprising the steps of:
a first step of forming a gate electrode layer over a substrate;
a second step of forming a first insulating layer over the gate electrode layer;
a third step of forming an oxide semiconductor layer over the first insulating layer, the oxide semiconductor layer overlapping with the gate electrode layer and containing In, Ga, and Zn;
a fourth step of performing a first heat treatment at a temperature higher than or equal to 450° C. and lower than or equal to 850° C. in a dry air atmosphere at a dew point lower than or equal to −40° C.;
a fifth step of forming a source electrode layer and a drain electrode layer which overlap with the oxide semiconductor layer;
a sixth step of forming a second insulating layer over the source electrode layer and the drain electrode layer, the second insulating layer being in contact with the oxide semiconductor layer; and
a seventh step of performing a second heat treatment at a temperature higher than or equal to 200° C. and lower than or equal to 400° C.,
wherein the second insulating layer is an oxide film.