Granted Patent
B2
US 12,206,023 · App. 18/381,668 · Granted Jan 21, 2025
Oxide semiconductor film and semiconductor device
Inventors:
Masahiro Takahashi (Atsugi, JP); Kengo Akimoto (Atsugi, JP); Shunpei Yamazaki (Setagaya, JP)
H01L29/7869C01G15/006G02F1/134309G02F1/136213G02F1/1368H01L21/02565H01L21/02609H01L27/1225H01L27/1285H01L29/045H01L29/24H01L29/66969H01L29/78696C01P2006/40G02F2201/123H10K59/1213
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Abstract
To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In 1+δ Ga 1−δ O 3 (ZnO) m (0<δ<1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by In x Ga y O 3 (ZnO) m (0<x<2, 0<y<2, and m=1 to 3 are satisfied).
Claims (24)
1. A semiconductor device comprising:
a substrate;
a source electrode and a drain electrode over the substrate; and
a semiconductor film between the source electrode and the drain electrode, the semiconductor film comprising a first semiconductor region and a second semiconductor region over the first semiconductor region,
wherein the second semiconductor region comprises crystals,
wherein c-axes of the crystals are oriented substantially in a direction parallel to a normal vector of a surface where the semiconductor film is formed,
wherein a first material of the first semiconductor region has a different composition from a second material of the second semiconductor region,
wherein each of the first material and the second material is an In—Ga—Zn—O-based metal oxide, and
wherein the first material has a different composition ratio of In to Ga and Zn from the second material.
2. The semiconductor device according to claim 1 , further comprising a gate electrode between the substrate and the semiconductor film.
3. The semiconductor device according to claim 1 , further comprising a gate electrode over the semiconductor film.
4. The semiconductor device according to claim 1 , wherein an alignment of c-axes of the crystals of the second semiconductor region is higher than an alignment of each of a-axes and b-axes of the crystals of the second semiconductor region.
5. A semiconductor device comprising:
a substrate; and
a semiconductor film including a channel formation region over the substrate, the semiconductor film comprising a first semiconductor region and a second semiconductor region over the first semiconductor region,
wherein the second semiconductor region comprises crystals,
wherein c-axes of the crystals are oriented substantially in a direction parallel to a normal vector of a surface where the semiconductor film is formed,
wherein a first material of the first semiconductor region has a different composition from a second material of the second semiconductor region,
wherein each of the first material and the second material is an In—Ga—Zn—O-based metal oxide, and
wherein the first material has a different composition ratio of In to Ga and Zn from the second material.
6. The semiconductor device according to claim 5 , further comprising a source electrode and a drain electrode each electrically connected to the semiconductor film.
7. The semiconductor device according to claim 5 , further comprising a gate electrode between the substrate and the semiconductor film.
8. The semiconductor device according to claim 5 , further comprising a gate electrode over the semiconductor film.
9. The semiconductor device according to claim 5 , wherein an alignment of c-axes of the crystals of the second semiconductor region is higher than an alignment of each of a-axes and b-axes of the crystals of the second semiconductor region.
Priority Claims (1)
JP 2011-089349
· Apr 13, 2011
· national
Continuity (6)
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