Thin film transistor
A thin film transistor is disclosed comprising comprises a substrate, a dielectric layer, and a semiconductor layer. The semiconductor layer, which is crystalline zinc oxide preferentially oriented with the c-axis perpendicular to the plane of the dielectric layer or substrate, is prepared by liquid depositing a zinc oxide nanodisk composition. The thin film transistor has good mobility and on/off ratio.
1. A thin film transistor, comprising:
a substrate;
a gate electrode a source electrode and a drain electrode;
a dielectric layer; and
a semiconductor layer;
wherein the semiconductor layer comprises zinc oxide nanodisks oriented with their c-axis perpendicular to the dielectric layer or the substrate; and
wherein the zinc oxide nanodisks have a height of from about 1 nanometer to about 100 nanometers.
2. A thin film transistor, comprising:
a substrate;
a gate electrode, a source electrode, and a drain electrode;
a dielectric layer; and
a semiconductor layer, wherein the semiconductor layer comprises zinc oxide nanodisks oriented with their c-axis perpendicular to the substrate;
wherein the zinc oxide nanodisks have a height of from about 1 nanometer to about 100 nanometers.
3. A thin film transistor, comprising:
a polymeric substrate;
a gate electrode, a source electrode, and a drain electrode;
a dielectric layer; and
a semiconductor layer, wherein the semiconductor layer comprises zinc oxide nanodisks oriented with their c-axis perpendicular to the dielectric layer;
wherein the zinc oxide nanodisks have a height of from about 1 nanometer to about 100 nanometers.