Method for manufacturing semiconductor device
An object is to provide a semiconductor device including a semiconductor element which has favorable characteristics. A manufacturing method of the present invention includes the steps of: forming a first conductive layer which functions as a gate electrode over a substrate; forming a first insulating layer to cover the first conductive layer; forming a semiconductor layer over the first insulating layer so that part of the semiconductor layer overlaps with the first conductive layer; forming a second conductive layer to be electrically connected to the semiconductor layer; forming a second insulating layer to cover the semiconductor layer and the second conductive layer; forming a third conductive layer to be electrically connected to the second conductive layer; performing first heat treatment after forming the semiconductor layer and before forming the second insulating layer; and performing second heat treatment after forming the second insulating layer.
1. A manufacturing method of a semiconductor device comprising:
forming an oxide semiconductor layer over a first insulating layer;
forming a first conductive layer electrically connected to the oxide semiconductor layer;
forming a second insulating layer over the oxide semiconductor layer and the first conductive layer;
performing a first heat treatment before forming the second insulating layer; and
performing a second heat treatment after forming the second insulating layer,
wherein a hydrogen concentration in the second insulating layer is lower than a hydrogen concentration in the oxide semiconductor layer.
2. The manufacturing method according to claim 1 , wherein the first heat treatment is performed after forming the oxide semiconductor layer.
3. The manufacturing method according to claim 1 , wherein a source electrode and a drain electrode are formed from the first conductive layer.
4. The manufacturing method according to claim 1 , wherein the first heat treatment is performed at 100° C. to 500° C.
5. The manufacturing method according to claim 1 , wherein the second heat treatment is performed at 400° C. or lower.
6. The manufacturing method according to claim 1 , wherein the second insulating layer is formed by a sputtering method.
7. The manufacturing method according to claim 1 , wherein the hydrogen concentration in the second insulating layer is 1×10 21 atoms/cm 3 or lower.
8. A manufacturing method of a semiconductor device comprising:
forming an oxide semiconductor layer over a first insulating layer;
forming a first conductive layer electrically connected to the oxide semiconductor layer;
forming a second insulating layer over the oxide semiconductor layer and the first conductive layer;
forming a second conductive layer over the second insulating layer, the second conductive layer being electrically connected to the first conductive layer;
performing a first heat treatment before forming the second insulating layer; and
performing a second heat treatment after forming the second insulating layer,
wherein a hydrogen concentration in the second insulating layer is lower than a hydrogen concentration in the oxide semiconductor layer.
9. The manufacturing method according to claim 8 ,
wherein the first heat treatment is performed after forming the oxide semiconductor layer, and
wherein the second heat treatment is performed before forming the second conductive layer.
10. The manufacturing method according to claim 8 ,
wherein a source electrode and a drain electrode are formed from the first conductive layer, and
wherein the second conductive layer is a pixel electrode.
11. The manufacturing method according to claim 8 , wherein the first heat treatment is performed at 100° C. to 500° C.
12. The manufacturing method according to claim 8 , wherein the second heat treatment is performed at 400° C. or lower.
13. The manufacturing method according to claim 8 , wherein the second insulating layer is formed by a sputtering method.
14. The manufacturing method according to claim 8 , wherein the hydrogen concentration in the second insulating layer is 1×10 21 atoms/cm 3 or lower.