Semiconductor device and method for manufacturing the same
To manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor. An oxide semiconductor film is deposited by a sputtering method with the use of a polycrystalline sputtering target. In that case, partial pressure of water in a deposition chamber before or in the deposition is set to be lower than or equal to 10 −3 Pa, preferably lower than or equal to 10 −4 Pa, more preferably lower than or equal to 10 −5 Pa. Thus, a dense oxide semiconductor film is obtained. The density of the oxide semiconductor film is higher than 6.0 g/cm 3 and lower than 6.375 g/cm 3 .
1. A semiconductor device comprising:
a gate electrode layer;
a gate insulating layer over the gate electrode layer;
a non-single-crystal oxide semiconductor film as a channel formation region over the gate insulating layer; and
an insulating layer over the channel formation region,
wherein the non-single-crystal oxide semiconductor film comprises a crystal part,
wherein a concentration of chlorine in the non-single-crystal oxide semiconductor film is lower than or equal to 2×10 18 atoms/cm 3 , and
wherein the non-single-crystal oxide semiconductor film has a density of higher than 6.0 g/cm 3 .
2. The semiconductor device according to claim 1 ,
wherein the density is measured by X-ray reflectivity or Rutherford backscattering spectrometry.
3. The semiconductor device according to claim 1 ,
wherein, in the crystal part, a c-axis is aligned in a direction parallel to a normal vector of a surface where the non-single-crystal oxide semiconductor film is formed or a normal vector of a surface of the non-single-crystal oxide semiconductor film.
4. The semiconductor device according to claim 1 ,
wherein the non-single-crystal oxide semiconductor film comprises at least indium and gallium.
5. The semiconductor device according to claim 1 ,
wherein the non-single-crystal oxide semiconductor film comprises at least indium, gallium, and zinc.
6. The semiconductor device according to claim 1 ,
wherein a concentration of copper in the non-single-crystal oxide semiconductor film is lower than or equal to 1×10 18 atoms/cm 3 .
7. The semiconductor device according to claim 1 ,
wherein a concentration of aluminum in the non-single-crystal oxide semiconductor film is lower than or equal to 1×10 18 atoms/cm 3 .
8. The semiconductor device according to claim 1 ,
wherein each of the gate insulating layer and the insulating layer contains excess oxygen,
wherein concentrations of hydrogen in the gate insulating layer and the insulating layer are lower than or equal to 7.2×10 20 atoms/cm 3 , and
wherein a concentration of hydrogen in the non-single-crystal oxide semiconductor film is lower than or equal to 5×10 19 atoms/cm 3 .
9. A semiconductor device comprising:
a gate insulating layer over first and second gate electrode layers; and
a non-single-crystal oxide semiconductor film over the first and second gate electrode layers with the gate insulating layer interposed therebetween,
wherein the non-single-crystal oxide semiconductor film comprises a crystal part,
wherein a concentration of chlorine in the non-single-crystal oxide semiconductor film is lower than or equal to 2×10 18 atoms/cm 3 , and
wherein the non-single-crystal oxide semiconductor film has a density of higher than 6.0 g/cm 3 .
10. The semiconductor device according to claim 9 ,
wherein the density is measured by X-ray reflectivity or Rutherford backscattering spectrometry.
11. The semiconductor device according to claim 9 ,
wherein, in the crystal part, a c-axis is aligned in a direction parallel to a normal vector of a surface where the non-single-crystal oxide semiconductor film is formed or a normal vector of a surface of the non-single-crystal oxide semiconductor film.
12. The semiconductor device according to claim 9 ,
wherein the non-single-crystal oxide semiconductor film comprises at least indium and gallium.
13. The semiconductor device according to claim 9 ,
wherein the non-single-crystal oxide semiconductor film comprises at least indium, gallium, and zinc.
14. The semiconductor device according to claim 9 ,
wherein a concentration of copper in the non-single-crystal oxide semiconductor film is lower than or equal to 1×10 18 atoms/cm 3 .
15. The semiconductor device according to claim 9 ,
wherein a concentration of aluminum in the non-single-crystal oxide semiconductor film is lower than or equal to 1×10 18 atoms/cm 3 .
16. The semiconductor device according to claim 9 ,
wherein the gate insulating layer contains excess oxygen,
wherein a concentration of hydrogen in the gate insulating layer is lower than or equal to 7.2×10 20 atoms/cm 3 , and
wherein a concentration of hydrogen in the non-single-crystal oxide semiconductor film is lower than or equal to 5×10 19 atoms/cm 3 .
17. A semiconductor device comprising:
a first gate electrode layer;
a second gate electrode layer over the first gate electrode layer;
a gate insulating layer over the second gate electrode layer;
a non-single-crystal oxide semiconductor film as a channel formation region over the gate insulating layer; and
an insulating layer over the channel formation region,
wherein the non-single-crystal oxide semiconductor film comprises at least indium, gallium, and zinc,
wherein the non-single-crystal oxide semiconductor film comprises a crystal part,
wherein a concentration of chlorine in the non-single-crystal oxide semiconductor film is lower than or equal to 2×10 18 atoms/cm 3 , and
wherein the non-single-crystal oxide semiconductor film has a density of higher than 6.0 g/cm 3 .
18. The semiconductor device according to claim 17 ,
wherein the density is measured by X-ray reflectivity or Rutherford backscattering spectrometry.
19. The semiconductor device according to claim 17 ,
wherein, in the crystal part, a c-axis is aligned in a direction parallel to a normal vector of a surface where the non-single-crystal oxide semiconductor film is formed or a normal vector of a surface of the non-single-crystal oxide semiconductor film.
20. The semiconductor device according to claim 17 ,
wherein each of the gate insulating layer and the insulating layer contains excess oxygen,
wherein concentrations of hydrogen in the gate insulating layer and the insulating layer are lower than or equal to 7.2×10 20 atoms/cm 3 , and
wherein a concentration of hydrogen in the non-single-crystal oxide semiconductor film is lower than or equal to 5×10 19 atoms/cm 3 .