Semiconductor device
A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.
1. A semiconductor device comprising:
an insulating film;
a first oxide film over and in contact with the insulating film, the first oxide film comprising indium and gallium;
a second oxide film over and in contact with the first oxide film, the second oxide film comprising indium and gallium; and
a conductive film over and in contact with a top surface of the second oxide film, the conductive film being in contact with a side surface of the first oxide film and a side surface of the second oxide film,
wherein a thickness of the side surface of the first oxide film is larger than a thickness of the side surface of the second oxide film in a cross-sectional view, and
wherein the first oxide film is crystalline.
2. The semiconductor device according to claim 1 , further comprising a gate electrode with tapered side surfaces under the first oxide film.
3. The semiconductor device according to claim 1 , further comprising a gate electrode over the second oxide film.
4. The semiconductor device according to claim 1 , wherein a side surface of the conductive film faces a side surface of the insulating film and/or wherein a bottom surface of the conductive film is provided below a bottom surface of the first oxide film and the second oxide film.
5. The semiconductor device according to claim 1 , wherein the conductive film is electrically connected to a transparent film comprising indium, tin, and oxygen.
6. The semiconductor device according to claim 1 ,
wherein a first transparent film comprising indium, tin, and oxygen is provided over the conductive film, and
wherein a second transparent film comprising indium, tin, and oxygen is provided over the first transparent film.
7. The semiconductor device according to claim 1 ,
wherein a first insulating layer and a second insulating layer are provided over the second oxide film,
wherein the first insulating layer comprises silicon oxide,
wherein the second insulating layer comprises silicon nitride, and
wherein the conductive film comprises titanium and copper.
8. A semiconductor device comprising:
an insulating film;
a first oxide film over and in contact with the insulating film, the first oxide film comprising indium, gallium and zinc;
a second oxide film over and in contact with the first oxide film, the second oxide film comprising indium, gallium and zinc; and
a conductive film over and in contact with a top surface of the second oxide film, the conductive film being in contact with a side surface of the first oxide film and a side surface of the second oxide film,
wherein the first oxide film is crystalline, and
wherein a thickness of the side surface of the first oxide film is larger than a thickness of the side surface of the second oxide film in a cross-sectional view.
9. The semiconductor device according to claim 8 , further comprising a gate electrode with tapered side surfaces under the first oxide film.
10. The semiconductor device according to claim 8 , further comprising a gate electrode over the second oxide film.
11. The semiconductor device according to claim 8 , wherein a side surface of the conductive film faces a side surface of the insulating film and/or wherein a bottom surface of the conductive film is provided below a bottom surface of the first oxide film and the second oxide film.
12. The semiconductor device according to claim 8 , wherein the conductive film is electrically connected to a transparent film comprising indium, tin, and oxygen.
13. The semiconductor device according to claim 8 ,
wherein a first transparent film comprising indium, tin, and oxygen is provided over the conductive film, and
wherein a second transparent film comprising indium, tin, and oxygen is provided over the first transparent film.
14. A semiconductor device comprising:
an insulating film;
a first oxide film over and in contact with the insulating film, the first oxide film comprising indium;
a second oxide film over and in contact with the first oxide film, the second oxide film comprising indium; and
a conductive film over and in contact with a top surface of the second oxide film, the conductive film being in contact with a side surface of the first oxide film and a side surface of the second oxide film,
wherein a thickness of the side surface of the first oxide film is larger than a thickness of the side surface of the second oxide film in a cross-sectional view, and
wherein the first oxide film is crystalline.
15. The semiconductor device according to claim 14 , further comprising a gate electrode with tapered side surfaces under the first oxide film.
16. The semiconductor device according to claim 14 , further comprising a gate electrode over the second oxide film.
17. The semiconductor device according to claim 14 , wherein a side surface of the conductive film faces a side surface of the insulating film and/or wherein a bottom surface of the conductive film is provided below a bottom surface of the first oxide film and the second oxide film.
18. The semiconductor device according to claim 14 , wherein the conductive film is electrically connected to a transparent film comprising indium, tin, and oxygen.
19. The semiconductor device according to claim 14 ,
wherein a first transparent film comprising indium, tin, and oxygen is provided over the conductive film, and
wherein a second transparent film comprising indium, tin, and oxygen is provided over the first transparent film.