Method for manufacturing semiconductor device
An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.
1. A semiconductor device comprising:
a first conductive film over a substrate;
a first insulating film over the first conductive film;
an oxide semiconductor film over the first insulating film;
a second conductive film and a third conductive film over the oxide semiconductor film;
an oxide insulating film over the second conductive film and the third conductive film;
a second insulating film over the oxide insulating film; and
a fourth conductive film and a fifth conductive film over the second insulating film,
wherein the fourth conductive film is electrically connected to the third conductive film,
wherein a region of the fifth conductive film overlaps the first conductive film and the oxide semiconductor film, and
wherein the fourth conductive film and the fifth conductive film comprise the same material.
2. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor film contains indium, gallium and zinc.
3. The semiconductor device according to claim 1 ,
wherein each of the second conductive film and the third conductive film has a stacked structure.
4. The semiconductor device according to claim 1 ,
wherein the second insulating film is a nitride film which is in contact with the oxide insulating film.
5. A display device comprising the semiconductor device according to claim 1 .
6. An electronic equipment comprising the display device according to claim 5 .
7. A semiconductor device comprising:
a first conductive film over a substrate;
a first insulating film over the first conductive film;
an oxide semiconductor film over the first insulating film;
a second conductive film and a third conductive film over the oxide semiconductor film;
an oxide insulating film over the second conductive film and the third conductive film;
a second insulating film over the oxide insulating film; and
a fourth conductive film and a fifth conductive film over the second insulating film,
wherein the fourth conductive film is electrically connected to the third conductive film,
wherein a region of the fifth conductive film overlaps the first conductive film and the oxide semiconductor film,
wherein the fourth conductive film and the fifth conductive film comprise the same material, and
wherein each of the fourth conductive film and the fifth conductive film comprises a transparent conductive film.
8. The semiconductor device according to claim 7 ,
wherein the oxide semiconductor film contains indium, gallium and zinc.
9. The semiconductor device according to claim 7 ,
wherein each of the second conductive film and the third conductive film has a stacked structure.
10. The semiconductor device according to claim 7 ,
wherein the second insulating film is a nitride film which is in contact with the oxide insulating film.
11. A display device comprising the semiconductor device according to claim 7 .
12. An electronic equipment comprising the display device according to claim 11 .