Method for manufacturing semiconductor device
The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.
1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a separation layer over a first substrate the separation layer comprising an organic compound and a photocatalyst substance;
forming an element layer over the separation layer, the element layer comprising at least one of a transistor, an organic EL element, an inorganic EL element, and a liquid crystal display element;
after forming the element layer over the separation layer, activating the photocatalyst substance by scanning the separation layer with a laser light to irradiate the photocatalyst substance with the laser light;
after activating the photocatalyst substance, separating the element layer with part of the separation layer from the first substrate; and
after separating the element layer, attaching a second substrate to a surface of the part of the separation layer.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein the organic compound is a resin.
3. The method for manufacturing a semiconductor device according to claim 2 , wherein the resin is any of a cyanoethyl cellulose based resin, a polyethylene, a polypropylene, a polystyrene based resin, a silicone resin, an epoxy resin, a vinylidene fluoride, an aromatic polyamide, a polybenzimidazole, a siloxane resin, a vinyl resin, a phenol resin, a novolac resin, an acrylic resin, a melamine resin, a urethane resin, and an oxazole resin.
4. The method for manufacturing a semiconductor device according to claim 1 , wherein the photocatalyst substance is any of a titanium oxide, a strontium titanate, a cadmium selenide, a potassium tantalate, a cadmium sulfide, a zirconium oxide, a niobium oxide, a zinc oxide, an iron oxide, and a tungsten oxide.
5. The method for manufacturing a semiconductor device according to claim 1 , wherein the photocatalyst substance is a titanium oxide.
6. The method for manufacturing a semiconductor device according to claim 1 , wherein the photocatalyst substance is dispersed in the separation layer.
7. The method for manufacturing a semiconductor device according to claim 1 , wherein a concentration of the photocatalyst substance has a gradient in a thickness direction in the separation layer.
8. The method for manufacturing a semiconductor device according to claim 1 , further comprising the step of attaching a third substrate to the element layer with an adhesive layer interposed between the element layer and the third substrate.
9. The method for manufacturing a semiconductor device according to claim 1 , further comprising the step of forming a protective layer over the element layer.
10. The method for manufacturing a semiconductor device according to claim 9 , wherein the protective layer is a resin layer.
11. The method for manufacturing a semiconductor device according to claim 1 , further comprising the step of forming an insulating film over the separation layer, wherein the element layer is formed over the insulating film.
12. The method for manufacturing a semiconductor device according to claim 1 , wherein the part of the separation layer comprises the photocatalyst substance.
13. A method for manufacturing a semiconductor device, comprising the steps of:
forming a separation layer over a first substrate the separation layer comprising an organic compound and a photocatalyst substance;
forming an element layer over the separation layer, the element layer comprising at least one of a transistor, an organic EL element, an inorganic EL element, and a liquid crystal display element;
after forming the element layer over the separation layer, scanning the separation layer with a laser light to irradiate the photocatalyst substance with the laser light;
after scanning the separation layer, separating the element layer with part of the separation layer from the first substrate; and
after separating the element layer, attaching a second substrate to a surface of the part of the separation layer.
14. The method for manufacturing a semiconductor device according to claim 13 , wherein the organic compound is a resin.
15. The method for manufacturing a semiconductor device according to claim 14 , wherein the resin is any of a cyanoethyl cellulose based resin, a polyethylene, a polypropylene, a polystyrene based resin, a silicone resin, an epoxy resin, a vinylidene fluoride, an aromatic polyamide, a polybenzimidazole, a siloxane resin, a vinyl resin, a phenol resin, a novolac resin, an acrylic resin, a melamine resin, a urethane resin, and an oxazole resin.
16. The method for manufacturing a semiconductor device according to claim 13 , wherein the photocatalyst substance is any of a titanium oxide, a strontium titanate, a cadmium selenide, a potassium tantalate, a cadmium sulfide, a zirconium oxide, a niobium oxide, a zinc oxide, an iron oxide, and a tungsten oxide.
17. The method for manufacturing a semiconductor device according to claim 13 , wherein the photocatalyst substance is dispersed in the separation layer.
18. The method for manufacturing a semiconductor device according to claim 13 , wherein a concentration of the photocatalyst substance has a gradient in a thickness direction in the separation layer.
19. The method for manufacturing a semiconductor device according to claim 13 , further comprising the step of attaching a third substrate to the element layer with an adhesive layer interposed between the element layer and the third substrate.
20. The method for manufacturing a semiconductor device according to claim 13 , further comprising the step of forming a protective layer over the element layer.
21. The method for manufacturing a semiconductor device according to claim 20 , wherein the protective layer is a resin layer.
22. The method for manufacturing a semiconductor device according to claim 13 , further comprising the step of forming an insulating film over the separation layer, wherein the element layer is formed over the insulating film.
23. The method for manufacturing a semiconductor device according to claim 13 , wherein the part of the separation layer comprises the photocatalyst substance.
24. A method for manufacturing a semiconductor device, comprising the steps of:
forming a separation layer over a first substrate the separation layer comprising an organic compound and titanium oxide;
forming an element layer over the separation layer, the element layer comprising at least one of a transistor, an organic EL element, an inorganic EL element, and a liquid crystal display element;
after forming the element layer over the separation layer, scanning the separation layer with a laser light to irradiate the titanium oxide with the laser light;
after scanning the separation layer, separating the element layer with part of the separation layer from the first substrate; and
after separating the element layer, attaching a second substrate to a surface of the part of the separation layer.
25. The method for manufacturing a semiconductor device according to claim 24 , wherein the organic compound is a resin.
26. The method for manufacturing a semiconductor device according to claim 25 , wherein the resin is any of a cyanoethyl cellulose based resin, a polyethylene, a polypropylene, a polystyrene based resin, a silicone resin, an epoxy resin, a vinylidene fluoride, an aromatic polyimide, a polybenzimidazole, a siloxane resin, a vinyl resin, a phenol resin, a novolac resin, an acrylic resin, a melamine resin, a urethane resin, and an oxazole resin.
27. The method for manufacturing a semiconductor device according to claim 24 , wherein the titanium oxide is dispersed in the separation layer.
28. The method for manufacturing a semiconductor device according to claim 24 , wherein a concentration of the titanium oxide has a gradient in a thickness direction in the separation layer.
29. The method for manufacturing a semiconductor device according to claim 24 , further comprising the step of attaching a third substrate to the element layer with an adhesive layer interposed between the element layer and the third substrate.
30. The method for manufacturing a semiconductor device according to claim 24 , further comprising the step of forming a protective layer over the element layer.
31. The method for manufacturing a semiconductor device according to claim 30 , wherein the protective layer is a resin layer.
32. The method for manufacturing a semiconductor device according to claim 24 , further comprising the step of forming an insulating film over the separation layer, wherein the element layer is formed over the insulating film.
33. The method for manufacturing a semiconductor device according to claim 24 , wherein the part of the separation layer comprises the titanium oxide.
34. The method for manufacturing a semiconductor device according to claim 1 , wherein the second substrate is capable of blocking light in a wavelength which activates the photocatalyst substance.
35. The method for manufacturing a semiconductor device according to claim 13 , wherein the second substrate is capable of blocking light in a wavelength which activates the photocatalyst substance.
36. The method for manufacturing a semiconductor device according to claim 24 , wherein the second substrate is capable of blocking light in a wavelength which activates the titanium oxide.