Granted Patent B2

US 12,243,881 · App. 18/239,928 · Granted Mar 4, 2025

Inventors: Shunpei Yamazaki (Setagaya, JP); Jun Koyama (Sagamihara, JP); Masashi Tsubuku (Atsugi, JP); Kosei Noda (Atsugi, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

H01L27/1255G09G3/20G09G3/2092G09G3/3291G09G3/36G11C19/184G11C19/28H01L27/1222H01L27/1225H01L27/124H01L29/7869H03K17/161H03K19/00315H03K19/096G09G3/3233G09G3/3648G09G2300/0439G09G2300/08G09G2300/0842G09G2310/0267G09G2310/0275G09G2310/0286G09G2310/08

Abstract

Claims (37)

1. A semiconductor device comprising:

a pixel portion having a first transistor and a light-emitting element electrically connected to the first transistor; and

a drive circuit electrically connected to the pixel portion and having a second transistor,

the first transistor comprises:

a first source electrode layer and a first drain electrode layer;

a first oxide semiconductor layer having regions in contact with top surfaces and side surfaces of the first source electrode layer and the first drain electrode layer; and

a first gate electrode layer over the first oxide semiconductor layer with a first gate insulating layer interposed therebetween,

the second transistor comprises:

a second gate electrode layer;

a second source electrode layer and a second drain electrode layer over the second gate electrode layer;

a second oxide semiconductor layer having regions in contact with top surfaces and side surfaces of the second source electrode layer and the second drain electrode layer; and

a third gate electrode layer over the second oxide semiconductor layer with a second gate insulating layer interposed therebetween,

wherein the first oxide semiconductor layer and the second oxide semiconductor layer each comprise indium, gallium, and zinc.

2. The semiconductor device according to claim 1 , wherein the first gate electrode layer has a laminated structure and comprises an element selected from molybdenum, titanium, chromium, tantalum, tungsten, aluminum and copper.

3. The semiconductor device according to claim 1 , wherein the second gate electrode layer comprises an element selected from titanium, tantalum, tungsten, molybdenum and chromium.

4. The semiconductor device according to claim 1 , wherein the third gate electrode layer has a laminated structure and comprises an element selected from molybdenum, titanium, chromium, tantalum, tungsten, aluminum and copper.

5. The semiconductor device according to claim 1 , wherein the first source electrode layer, the first drain electrode layer, the second source electrode layer, and the second drain electrode layer each comprise aluminum, chromium, copper, tantalum, titanium, molybdenum, and tungsten.

6. A semiconductor device comprising:

a pixel portion having a first transistor and a light-emitting element electrically connected to the first transistor; and

a drive circuit electrically connected to the pixel portion and having a second transistor,

the first transistor comprises:

a first insulating layer;

a first source electrode layer and a first drain electrode layer over the first insulating layer;

a first oxide semiconductor layer having regions in contact with top surfaces and side surfaces of the first source electrode layer and the first drain electrode layer; and

a first gate electrode layer over the first oxide semiconductor layer with a first gate insulating layer interposed therebetween,

the second transistor comprises:

a second gate electrode layer;

the first insulating layer over the second gate electrode layer;

a second source electrode layer and a second drain electrode layer over the first insulating layer;

a second oxide semiconductor layer having regions in contact with top surfaces and side surfaces of the second source electrode layer and the second drain electrode layer; and

a third gate electrode layer over the second oxide semiconductor layer with a second gate insulating layer interposed therebetween,

wherein the first oxide semiconductor layer and the second oxide semiconductor layer each comprise indium, gallium, and zinc.

7. The semiconductor device according to claim 6 , wherein the first insulating layer is a stack of silicon nitride and silicon oxide.

8. The semiconductor device according to claim 6 , wherein the first gate electrode layer has a laminated structure and comprises an element selected from molybdenum, titanium, chromium, tantalum, tungsten, aluminum and copper.

9. The semiconductor device according to claim 6 , wherein the second gate electrode layer comprises an element selected from titanium, tantalum, tungsten, molybdenum and chromium.

10. The semiconductor device according to claim 6 , wherein the third gate electrode layer has a laminated structure and comprises an element selected from molybdenum, titanium, chromium, tantalum, tungsten, aluminum and copper.

11. The semiconductor device according to claim 6 , wherein the first source electrode layer, the first drain electrode layer, the second source electrode layer, and the second drain electrode layer each comprise aluminum, chromium, copper, tantalum, titanium, molybdenum, and tungsten.

Priority Claims (1)

Continuity (9)

References Cited (400)