Solid state circuit breaker device and method without current limiter
A Solid-State Circuit Breaker Device and Method Without Current Limiting Inductor. According to an exemplary embodiment of this disclosure, described is a high-density, high-efficiency megawatt (MW) medium-voltage (MV) solid-state circuit breaker (SSCB) for, example only, aviation hybrid electric propulsion applications. The SSCB is based on the mature silicon (Si) insulated gate bipolar transistor (IGBT) devices. With reduced IGBT gate voltage, the disclosed SSCB can limit the peak fault current without the fault current limiting inductor. Thus, the specific power density of the SSCB is substantially improved compared with the traditional design.
1 . A solid state circuit breaker (SSCB) comprising:
a first IGBT (Insulated Gate Bipolar Transistor), the first IGBT including an emitter, a collector, and a gate;
a second IGBT that is anti-series to the first IGBT, the second IGBT including an emitter, a collector, and a gate;
each IGBT including anti-parallel diodes to carry and break bi-directional currents; and
a voltage clamping circuit or device to clamp the peak voltage across the first and second anti-series IGBTs,
wherein the first IGBT gate and the second IGBT gate are driven with a gate driver which applies a gate voltage to each gate which normally operates the IGBTs within the saturation region or turns the IGBTs off, and the applied gate voltage acts to limit the current thru the IGBT to the saturation current of the IGBT in the event the IGBT enters an active region during a current overload fault mode, the gate voltage applied enabling the IGBTs to operate as a solid state circuit breaker without a current limiting inductor.
2 . The solid state circuit breaker (SSCB) according to claim 1 , wherein the voltage clamping circuit is a MOV (metal-oxide varistor).
3 . The solid state circuit breaker (SSCB) according to claim 1 , further comprising:
an IGBT gate driver, the gate drive operatively connected to the first and second IGBT gates, and the gate driver operatively connected to a load current monitoring detection circuit or device, the IGBT configured to detect an overcurrent condition and in response to the detected overcurrent condition reducing the gate voltages applied to the first and second IGBT gates to turn the IGBTs off.
4 . The solid state circuit breaker (SSCB) according to claim 1 , wherein the IGBT gate voltage applied is in the range of 8V to 15V.
5 . The solid state circuit breaker (SSCB) according to claim 1 , wherein the gate voltage is selected to limit a peak current to the IGBT current saturation level independent from any fault response time associated with an over-current load condition.
6 . The solid state circuit breaker (SSCB) according to claim 1 , wherein the SSCB includes two IGBT modules connected back-to-back, an RC snubber limiting the transient voltage rise during IGBT turn-off and helping to mitigate the stress on the IGBT, and an electronically triggered MOV (eMOV), the eMOV reducing the peak clamping voltage inside the SSCB during fault clearing.
7 . The solid state circuit breaker (SSCB) according to claim 6 , wherein the eMOV includes a thyristor module and a MOV, wherein gates of the thyristor module are controlled by a passive circuit including breakover diodes (BOD allowing the use of a relatively MOV of lower clamping voltage without incurring excessive static dissipation during the SSCB off-state, thus optimizing the overall SSCB performance.
8 . A solid state circuit breaker (SSCB) comprising:
a first SSCB and a second SSB, each SSCB configured to operatively connect to a distinct pole of a voltage source, and each SSBC including:
a first IGBT (Insulated Gate Bipolar Transistor), the first IGBT including an emitter, a collector, and a gate;
a second IGBT that is anti-series to the first IGBT, the second IGBT including an emitter, a collector, and a gate;
each IGBT including anti-parallel diodes to carry and break bi-directional currents; and
a voltage clamping circuit or device to clamp the peak voltage across the first and second anti-series IGBTs,
wherein the first IGBT gate and the second IGBT gate are driven with a gate driver which applies a gate voltage to each gate which normally operates the IGBTs within the saturation region or turns the IGBTs off, and the applied gate voltage acts to limit the current thru the IGBT to the saturation current of the IGBT in the event the IGBT enters an active region during a current overload fault mode, the gate voltage applied enabling the IGBTs to operate as a solid state circuit breaker without a current limiting inductor.
9 . The solid state circuit breaker (SSCB) according to claim 8 , wherein the voltage clamping circuit is a MOV (metal-oxide varistor).
10 . The solid state circuit breaker (SSCB) according to claim 8 , further comprising:
an IGBT gate driver, the gate drive operatively connected to the first and second IGBT gates, and the gate driver operatively connected to a load current monitoring detection circuit or device, the IGBT configured to detect an overcurrent condition and in response to the detected overcurrent condition reducing the gate voltages applied to the first and second IGBT gates to turn the IGBTs off.
11 . The solid state circuit breaker (SSCB) according to claim 8 , wherein the IGBT gate voltage applied is in the range of 8V to 15V.
12 . The solid state circuit breaker (SSCB) according to claim 8 , wherein the gate voltage is selected to limit a peak current to the IGBT current saturation level independent from any fault response time associated with an over-current load condition.
13 . The solid state circuit breaker (SSCB) according to claim 8 , wherein the SSCB includes two IGBT modules connected back-to-back, an RC snubber limiting the transient voltage rise during IGBT turn-off and helping to mitigate the stress on the IGBT, and an electronically triggered MOV (eMOV), the eMOV reducing the peak clamping voltage inside the SSCB during fault clearing.
14 . The solid state circuit breaker (SSCB) according to claim 13 , wherein the eMOV includes a thyristor module and a MOV, wherein gates of the thyristor module are controlled by a passive circuit including breakover diodes (BOD allowing the use of a relatively MOV of lower clamping voltage without incurring excessive static dissipation during the SSCB off-state, thus optimizing the overall SSCB performance.
15 . A method of operating a solid state circuit breaker (SSCB) to provide current limiting without a current limiting inductor, the SSCB including a first IGBT (Insulated Gate Bipolar Transistor) and second anti-series IGBT, each IGBT including anti-parallel diodes to carry and break bi-directional currents; and a voltage clamping circuit or device to clamp the peak voltage across the first and second anti-series IGBTs, the method comprising:
applying to the first IGBT gate and the second IGBT a gate voltage which normally operates the IGBTs within the saturation region or turns the IGBTs off, and the applied gate voltage acting to limit the current thru the IGBT to the saturation current of the IGBT in the event the IGBT enters an active region during a current overload fault mode, the gate voltage applied enabling the IGBTs to operate as a solid state circuit breaker without a current limiting inductor.
16 . The method of operating a solid state circuit breaker (SSCB) according to claim 15 , further comprising:
detecting an overcurrent condition and in response to the detected overcurrent condition reducing the gate voltages applied to the first and second IGBT gates to turn the IGBTs off.
17 . The method of operating a solid state circuit breaker (SSCB) according to claim 15 , wherein the IGBT gate voltage applied is in the range of 8V to 15V.
18 . The method of operating a solid state circuit breaker (SSCB) according to claim 15 , wherein the gate voltage is selected to limit a peak current to the IGBT current saturation level independent from any fault response time associated with an over-current load condition.
19 . The method of operating a solid state circuit breaker (SSCB) according to claim 15 , wherein the SSCB includes two IGBT modules connected back-to-back, an RC snubber limiting the transient voltage rise during IGBT turn-off and helping to mitigate the stress on the IGBT, and an electronically triggered MOV (eMOV), the eMOV reducing the peak clamping voltage inside the SSCB during fault clearing.
20 . The method of operating a solid state circuit breaker (SSCB) according to claim 19 , wherein the eMOV includes a thyristor module and a MOV, wherein gates of the thyristor module are controlled by a passive circuit including breakover diodes (BOD allowing the use of a relatively MOV of lower clamping voltage without incurring excessive static dissipation during the SSCB off-state, thus optimizing the overall SSCB performance.