Solid state circuit breaker with reduced clamping voltage
View Patent ↗A solid state circuit breaker that may include a metal oxide varistor (MOV) that is connected in series to a thyristor, the MOV to clamp voltage of current flowing through the solid state circuit breaker; the thyristor including a gate to control flow of the current to the MOV along a first path to the MOV; a breakover diode to activate at a target voltage level to allow the current to flow to the MOV along a second path; and a Zener diode to close the gate and allow current to flow along the first path in response to the current on the second path.
1. A solid state circuit breaker comprising:
a metal oxide varistor (MOV) that is connected in series to a thyristor, the MOV to clamp voltage of current flowing through the solid state circuit breaker;
the thyristor comprising a gate to control flow of the current to the MOV along a first path to the MOV;
a breakover diode to activate at a target voltage level to allow the current to flow to the MOV along a second path;
a Zener diode to close the gate and allow current to flow along the first path in response to the current on the second path, and
an RC slapper on a fourth path that bypasses the MOV, the RC slapper to initially and temporarily carry current when the solid state circuit breaker is activated.
2. The solid state circuit breaker of claim 1 , further comprising a second thyristor that is antiparallel to the thyristor and is connected in series to the MOV, the second thyristor comprising a second gate to control flow of the current to the MOV along a third path.
3. The solid state circuit breaker of claim 1 , wherein the Zener diode further comprises a resistor-capacitor to prevent the thyristor gate from closing prematurely.
4. The solid state circuit breaker of claim 1 , wherein the MOV has a voltage ratio between clamping voltage and continuous blocking voltage of less than 1.9.
5. The solid state circuit breaker of claim 1 , wherein the MOV has a leakage current at system DC voltage that is lower than a hold-on current level of the thyristor.
6. The solid state circuit breaker of claim 1 , wherein the MOV has a clamping voltage that is lower than a voltage rating of a semiconductor connected to the solid state circuit breaker.
7. The solid state circuit breaker of claim 1 , wherein the MOV has a leakage current at a maximum continuous voltage, and wherein a voltage of the breakover diode at the leakage current is higher than a difference between a system dc voltage and the maximum continuous voltage.
8. The solid state circuit breaker of claim 1 , wherein the breakover diode has a breakover current when the breakover voltage level is reached, and wherein the MOV has a MOV voltage at the breakover current that is lower than a difference between a voltage rating of a semiconductor connected to the solid state circuit breaker and a breakover voltage of the breakover diode.
9. A solid state circuit breaker comprising:
a metal oxide varistor (MOV) that is connected in series to a first thyristor, the MOV to clamp voltage of current flowing through the solid state circuit breaker;
the first thyristor comprising a first gate to control flow of the current to the MOV along a first path to the MOV;
a breakover diode to activate at a target voltage level to allow the current to flow to the MOV along a second path;
a Zener diode to close the first gate and allow current to flow along the first path in response to the current on the second path; and
a second thyristor that is antiparallel to the first thyristor and is connected in series to the MOV, the second thyristor comprising a second gate to control flow of the current to the MOV along a third path.
10. The solid state circuit breaker of claim 9 , further comprising an RC slapper on a fourth path that bypasses the MOV, the RC slapper to initially and temporarily carry current when the solid state circuit breaker is activated.
11. The solid state circuit breaker of claim 9 , wherein the Zener diode further comprises a resistor-capacitor to prevent the first gate from closing prematurely.
12. The solid state circuit breaker of claim 9 , wherein the MOV has a voltage ratio between clamping voltage and continuous blocking voltage of less than 1.9.
13. The solid state circuit breaker of claim 9 , wherein the MOV has a leakage current at system DC voltage that is lower than a hold-on current level of the first thyristor.
14. The solid state circuit breaker of claim 9 , wherein the MOV has a clamping voltage that is lower than a voltage rating of a semiconductor connected to the solid state circuit breaker.
15. The solid state circuit breaker of claim 9 , wherein the MOV has a leakage current at a maximum continuous voltage, and wherein a voltage of the breakover diode at the leakage current is higher than a difference between a system dc voltage and the maximum continuous voltage.
16. The solid state circuit breaker of claim 9 , wherein the breakover diode has a breakover current when the breakover voltage level is reached, and wherein the MOV has a MOV voltage at the breakover current that is lower than a difference between a voltage rating of a semiconductor connected to the solid state circuit breaker and a breakover voltage of the breakover diode.