Spiral transient voltage suppressor or Zener structure
A transient voltage suppressor is disclosed that includes an electrode, a substrate disposed on the electrode, the substrate having a first doping, an epitaxial layer disposed on the substrate, the epitaxial layer having a second doping that is different from the first doping, a channel formed in the epitaxial layer having a width W, a length L and a plurality of curved regions, the channel forming a plurality of adjacent sections, the channel having a third doping that is different from the first doping and the second doping and a metal layer formed on top of the channel and contained within the width W of the channel.
1. A transient voltage suppressor, comprising:
an electrode;
a substrate disposed on the electrode, the substrate having a first doping;
an epitaxial layer disposed on the substrate, the epitaxial layer having a second doping that is different from the first doping;
a channel formed in the epitaxial layer having a width W, a length L and a plurality of cylindrical curved regions, the channel having a third doping that is different from the first doping and the second doping; and
a metal layer having a plurality of curved regions forming a closed loop and formed on top of the channel and contained within the width W and length L of the channel.
2. The transient voltage suppressor of claim 1 wherein the first doping is an N++ doping.
3. The transient voltage suppressor of claim 1 wherein the second doping is an N+ doping.
4. The transient voltage suppressor of claim 1 wherein the third doping is a P+ doping.
5. The transient voltage suppressor of claim 1 wherein the channel forms a single closed loop.
6. The transient voltage suppressor of claim 1 wherein the channel extends more than 360 degrees in a spiral starting from a center point.
7. The transient voltage suppressor of claim 1 wherein the channel extends more than 180 degrees in a spiral starting from a center point.
8. The transient voltage suppressor of claim 1 wherein the channel extends more than 90 degrees in a spiral starting from a center point.
9. The transient voltage suppressor of claim 1 wherein the channel maintains a constant distance from edge to edge in adjacent sections.
10. A method of manufacturing a transient voltage suppressor, comprising:
forming a substrate having a first doping;
forming an epitaxial layer on the substrate, the epitaxial layer having a second doping that is different from the first doping;
forming a channel in the epitaxial layer having a width W, a length L and a plurality of cylindrical curved regions that form a closed loop, the channel having a third doping that is different from the first doping and the second doping; and
forming a metal layer having a plurality of curved regions and a closed loop shape on top of the channel that is contained within the width W and length L of the channel.
11. The method of claim 10 wherein the first doping is an N++ doping.
12. The method of claim 10 wherein the second doping is an N+ doping.
13. The method of claim 10 wherein the third doping is a P+ doping.
14. The method of claim 10 wherein the channel forms a single closed loop.
15. The method of claim 10 wherein the channel extends more than 360 degrees in a spiral starting from a center point.
16. The method of claim 10 wherein the channel extends more than 180 degrees in a spiral starting from a center point.
17. The method of claim 10 wherein the channel extends more than 90 degrees in a spiral starting from a center point.
18. The method of claim 10 wherein the channel maintains a constant distance from edge to edge in adjacent sections.