Display device and semiconductor device
An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.
1. A display device comprising a pixel, the pixel comprising:
a first transistor comprising a plurality of channel formation regions;
a second transistor comprising a channel formation region in a semiconductor layer; and
an EL element,
wherein one of a source and a drain of the first transistor is electrically connected to a gate of the second transistor,
wherein the other of the source and the drain of the first transistor is electrically connected to a first wiring,
wherein one of a source and a drain of the second transistor is electrically connected to the EL element,
wherein the other of the source and the drain of the second transistor is electrically connected to a second wiring,
wherein the semiconductor layer is electrically connected to the EL element through a conductive layer,
wherein, in a plane view, each of the first wiring and the second wiring has a region extending in a first direction,
wherein, in the plane view, the second wiring has a first region overlapping with the plurality of channel formation regions of the first transistor, a second region overlapping with the channel formation region of the second transistor, and a third region opposite to the conductive layer,
wherein a width of the third region of the second wiring is larger than a width of the first wiring, and
wherein the width of the third region of the second wiring is smaller than a width of each of the first region and the second region of the second wiring.
2. The display device according to claim 1 ,
wherein each of the plurality of channel formation regions of the first transistor comprises a region in which carriers flow in the first direction, and
wherein the channel formation region of the second transistor comprises a region in which carriers flow in a second direction intersecting with the first direction.
3. The display device according to claim 1 ,
wherein, in the plane view, the second wiring has a fourth region between the first wiring and the conductive layer.
4. The display device according to claim 1 ,
wherein the pixel further comprises a capacitor, and
wherein the one of the source and the drain of the first transistor is electrically connected to the capacitor.
5. The display device according to claim 1 ,
wherein, in the plane view, the semiconductor layer has a bent shape.
6. The display device according to claim 1 ,
wherein the semiconductor layer comprises polycrystalline silicon.