Imaging element
The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.
1. A light detecting device, comprising:
a photoelectric conversion element;
a first amplification element that amplifies a signal from the photoelectric conversion element;
a second amplification element that amplifies an output from the first amplification element; and
a capacitor between the first amplification element and the second amplification element,
wherein the first amplification element is formed in a first substrate, and
wherein the second amplification element is formed in a second substrate laminated to the first substrate.
2. The light detecting device according to claim 1 , further comprising:
a first reset element that selectively resets the first amplification element; and
a second reset element that selectively resets the second amplification element.
3. The light detecting device according to claim 2 ,
wherein the first reset element is formed in the first substrate, and
wherein the second reset element is formed in the second substrate.
4. The light detecting device according to claim 1 ,
wherein the first substrate and the second substrate are electrically connected via a metal bond.
5. The light detecting device according to claim 1 ,
wherein a parasitic capacitance on an input side of the second amplification element is larger than a parasitic capacitance on an input side of the first amplification element.
6. The light detecting device according to claim 1 , further comprising:
a transfer transistor, wherein the first amplification element is a first amplification transistor, and wherein the transfer transistor selectively connects the photoelectric conversion element to a gate of the first amplification transistor.
7. The light detecting device according to claim 6 ,
wherein the second amplification element is a second amplification transistor, and wherein the capacitor is connected to a gate of the second amplification transistor.
8. The light detecting device according to claim 1 ,
wherein the capacitor is a first capacitor, and
wherein the light detecting device further comprises:
a second capacitor, wherein a node of the second capacitor is connected to a node of the first capacitor.
9. The light detecting device according to claim 1 ,
wherein the capacitor is formed in the second substrate.
10. The light detecting device according to claim 1 , further comprising:
a select transistor connected to the second amplification element, wherein the select transistor is formed in the second substrate.
11. A light detecting device, comprising:
a photoelectric conversion element;
a first amplification element that amplifies a signal from the photoelectric conversion element;
a second amplification element that amplifies an output from the first amplification element; and
a capacitor connected to the first amplification element and the second amplification element,
wherein a parasitic capacitance on an input side of the second amplification element is larger than a parasitic capacitance on an input side of the first amplification element.
12. The light detecting device according to claim 11 , further comprising:
a first reset element that selectively resets the first amplification element; and
a second reset element that selectively resets the second amplification element.
13. The light detecting device according to claim 12 ,
wherein the first reset element is formed in a first substrate, and
wherein the second reset element is formed in a second substrate laminated to the first substrate.
14. The light detecting device according to claim 13 , wherein the first substrate and the second substrate are electrically connected via a metal bond.
15. The light detecting device according to claim 13 ,
wherein the capacitor is formed in the second substrate.
16. The light detecting device according to claim 13 , further comprising:
a select transistor connected to the second amplification element, wherein the select transistor is formed in the second substrate.
17. The light detecting device according to claim 11 ,
wherein the first amplification element is formed in a first substrate, and
wherein the second amplification element is formed in a second substrate laminated to the first substrate.
18. The light detecting device according to claim 11 , further comprising:
a transfer transistor, wherein the first amplification element is a first amplification transistor, and wherein the transfer transistor selectively connects the photoelectric conversion element to a gate of the first amplification transistor.
19. The light detecting device according to claim 18 ,
wherein the second amplification element is a second amplification transistor, and wherein the capacitor is connected to a gate of the second amplification transistor.
20. The light detecting device according to claim 11 ,
wherein the capacitor is a first capacitor, and
wherein the light detecting device further comprises:
a second capacitor, wherein a node of the second capacitor is connected to a node of the first capacitor.