METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES
Metal insulator metal capacitors are described. In an example, a metal-insulator-metal (MIM) capacitor includes a first electrode. An insulator is over the first electrode. The insulator includes a first layer, and a second layer over the first layer. The first layer has a leakage current that is less than a leakage current of the second layer. The second layer has a dielectric constant that is greater than a dielectric constant of the first layer. A second electrode is over the insulator.
1 . A metal insulator metal (MIM) capacitor, comprising:
a first electrode;
an insulator over the first electrode, wherein the insulator comprises:
a first layer; and
a second layer over the first layer, wherein the first layer has a leakage current that is less than a leakage current of the second layer, and wherein the second layer has a dielectric constant that is greater than a dielectric constant of the first layer; and
a second electrode over the insulator.
2 . The MIM capacitor of claim 1 , wherein the first layer is a Sr-rich strontium titanium oxide (STO) layer, and the second layer is a Ti-rich STO layer.
3 . The MIM capacitor of claim 1 , wherein one of the first layer or the second layer is a Sr-rich strontium titanium oxide (STO) layer, and the other of the first layer or the second layer is a stoichiometric STO layer.
4 . The MIM capacitor of claim 1 , wherein the first layer has a thickness between approximately 1 nm and approximately 10 nm, and the second layer has a thickness between approximately 5 nm and approximately 30 nm.
5 . The MIM capacitor of claim 1 , wherein the first layer has a dielectric constant of approximately 120, and the second layer has a dielectric constant of greater than 150.
6 . An integrated circuit structure comprising:
a first build-up layer having a trench therein;
a metal insulator metal (MIM) capacitor in the trench, the MIM capacitor comprising:
a first electrode;
an insulator over the first electrode, wherein the insulator comprises titanium and oxygen; and
a second electrode over the insulator; and
a second build-up layer over the first build-up layer and over the MIM capacitor, wherein a portion of the second build-up layer is in the trench.
7 . The integrated circuit structure of claim 6 , wherein the MIM capacitor further comprises a second insulator over the second electrode, wherein the second insulator comprises titanium and oxygen, and a third electrode over the second insulator.
8 . The integrated circuit structure of claim 6 , wherein the first electrode or the second electrode comprises a metal selected from the group consisting of Ru, RuO 2 , Ir, IrO 2 , Mo, Re, Ti, W, and Mo.
9 . The integrated circuit structure of claim 6 , wherein the insulator is a hafnium free insulating layer.
10 . The integrated circuit structure of claim 6 , wherein the insulator has a TiO 2 composition.
11 . A computing device, comprising:
a board; and
a component coupled to the board, the component including a metal-insulator-metal (MIM) capacitor, comprising:
a first electrode;
an insulator over the first electrode, wherein the insulator comprises:
a first layer; and
a second layer over the first layer, wherein the first layer has a leakage current that is less than a leakage current of the second layer, and wherein the second layer has a dielectric constant that is greater than a dielectric constant of the first layer; and
a second electrode over the insulator.
12 . The computing device of claim 11 , further comprising:
a memory coupled to the board.
13 . The computing device of claim 11 , further comprising:
a communication chip coupled to the board.
14 . The computing device of claim 11 , further comprising:
a camera coupled to the board.
15 . The computing device of claim 11 , wherein the component is a packaged integrated circuit die.
16 . A computing device, comprising:
a board; and
a component coupled to the board, the component including an integrated circuit structure, comprising:
a first build-up layer having a trench therein;
a metal insulator metal (MIM) capacitor in the trench, the MIM capacitor comprising:
a first electrode;
an insulator over the first electrode, wherein the insulator comprises titanium and oxygen; and
a second electrode over the insulator; and
a second build-up layer over the first build-up layer and over the MIM capacitor, wherein a portion of the second build-up layer is in the trench.
17 . The computing device of claim 16 , further comprising:
a memory coupled to the board.
18 . The computing device of claim 16 , further comprising:
a communication chip coupled to the board.
19 . The computing device of claim 16 , further comprising:
a camera coupled to the board.
20 . The computing device of claim 16 , wherein the component is a packaged integrated circuit die.