Methods of adjusting a tilt between a bonding tool assembly and a support structure assembly of a bonding system
A method of adjusting a tilt between a bonding tool assembly and a support structure assembly of a bonding system is provided. The method includes the steps of: (a) bringing a bonding tool assembly of a bonding system into contact with a support structure assembly of the bonding system; (b) sensing a vacuum leakage at an interface between the bonding tool assembly and the support structure assembly; and (c) adjusting a tilt of at least one of (i) the bonding tool assembly and (ii) the support structure assembly in response to the vacuum leakage sensed in step (b).
1. A method of adjusting a tilt between a bonding tool assembly and a support structure assembly of a bonding system, the method comprising the steps of:
(a) bringing a bonding tool assembly of a bonding system into contact with a support structure assembly of the bonding system;
(b) sensing a vacuum leakage at an interface between the bonding tool assembly and the support structure assembly;
(c) adjusting a tilt of at least one of (i) the bonding tool assembly and (ii) the support structure assembly in response to the vacuum leakage sensed in step (b) until an acceptable level of vacuum leakage is sensed;
(d) moving the bonding tool assembly to an alignment height after step (c); and
(e) determining a tilt change caused by moving the bonding tool assembly to the alignment height.
2. The method of claim 1 wherein steps (b) and (c) repeat until the acceptable level of vacuum leakage is sensed.
3. The method of claim 1 wherein step (c) includes adjusting the tilt of the support structure assembly.
4. The method of claim 1 wherein step (c) includes adjusting the tilt of the bonding tool assembly.
5. The method of claim 1 wherein step (c) includes adjusting the tilt of both of the support structure assembly and the bonding tool assembly.
6. The method of claim 1 wherein the bonding tool assembly includes a bonding tool for bonding a semiconductor element to a substrate, and wherein step (a) includes bringing the bonding tool into contact with the support structure assembly.
7. The method of claim 1 wherein the bonding tool assembly includes a vacuum calibration tool, and wherein step (a) includes bringing the vacuum calibration tool into contact with the support structure assembly.
8. The method of claim 1 wherein the bonding tool assembly includes a nozzle, and wherein step (a) includes bringing the nozzle into contact with the support structure assembly.
9. The method of claim 1 wherein the bonding tool assembly includes (i) a bonding tool for bonding a semiconductor element to a substrate and (ii) the semiconductor element, and wherein step (a) includes bringing the semiconductor element into contact with the support structure assembly.
10. The method of claim 1 wherein the support structure assembly includes at least one of a pedestal, a chuck, a tilt stage, and a wafer stage.
11. The method of claim 1 wherein the support structure assembly includes a substrate configured to receive a semiconductor element from the bonding tool assembly, and wherein step (a) includes bringing the bonding tool assembly into contact with the substrate.
12. The method of claim 1 further comprising the steps of determining a tilt value of at least one of the bonding tool assembly and the support structure assembly after step (c) using information from steps (b) and (c), moving at least one of the bonding tool assembly and the support structure assembly to the tilt value before step (d), and compensating for the tilt change determined in step (e) in connection with a future bonding operation.
13. The method of claim 12 wherein the tilt value corresponds to the tilt resulting in a minimal level of vacuum leakage at the interface.
14. The method of claim 1 further comprising the step of compensating for the tilt change determined in step (e) in connection with a future bonding operation.
15. The method of claim 1 wherein the bonding tool assembly includes a plurality of vacuum inlets at the interface.
16. The method of claim 1 wherein the bonding tool assembly carries a plurality of semiconductor elements simultaneously.
17. A method of adjusting a tilt between a bonding tool assembly and a support structure assembly of a bonding system, the method comprising the steps of:
(a) bringing a bonding tool assembly of a bonding system into contact with a support structure assembly of the bonding system;
(b) sensing a vacuum leakage at an interface between the bonding tool assembly and the support structure assembly;
(c) adjusting a tilt of at least one of (i) the bonding tool assembly and (ii) the support structure assembly in response to the vacuum leakage sensed in step (b) until an acceptable level of vacuum leakage is sensed;
(d) determining a tilt value of at least one of the bonding tool assembly and the support structure assembly using information from steps (b) and (c);
(e) moving at least one of the bonding tool assembly and the support structure assembly to the tilt value;
(f) moving the bonding tool assembly to an alignment height after step (e);
(g) measuring a plurality of distances between portions of the support structure assembly and respective portions of the bonding tool assembly with the bonding tool assembly at the alignment height; and
(h) determining a tilt change caused by moving the bonding tool assembly to the alignment height using the plurality of distance measurements.
18. The method of claim 17 further comprising the step of (i) compensating for the tilt change determined in step (h) in connection with a future bonding operation.
19. A method of adjusting a tilt between a bonding tool assembly and a support structure assembly of a bonding system, the method comprising the steps of:
(a) bringing a bonding tool assembly of a bonding system into contact with a support structure assembly of the bonding system;
(b) adjusting a tilt of at least one of (i) the bonding tool assembly and (ii) the support structure assembly according to a tilt profile;
(c) sensing a vacuum leakage at an interface between the bonding tool assembly and the support structure assembly during step (b);
(d) further adjusting the tilt of at least one of (i) the bonding tool assembly and (ii) the support structure assembly in response to the vacuum leakage sensed in step (c) until an acceptable level of vacuum leakage is sensed;
(e) moving the bonding tool assembly to an alignment height after step (d); and
(f) determining a tilt change caused by moving the bonding tool assembly to the alignment height.