Light emitting device having a stacked structure
A light emitting device including a first light emitting part, a second light emitting part disposed on a first surface of the first light emitting part, and a third light emitting part disposed on a first surface of the second light emitting part, a first contact member contacting a surface of a second n-type semiconductor layer of the second light emitting part, an ohmic electrode electrically connected to a third p-type semiconductor layer of the third light emitting part, and an adhesive layer disposed between the second light emitting part and the third light emitting part, in which the first contact member extends toward the first light emitting part to be electrically connected to a first n-type semiconductor layer of the first light emitting part, and the adhesive layer extends toward the ohmic electrode.
1. A light emitting device comprising:
a first light emitter including a first n-type semiconductor layer, a first active layer, and a first p-type semiconductor layer;
a second light emitter connected to the first light emitter, and including a second n-type semiconductor layer, a second active layer, and a second p-type semiconductor layer;
a third light emitter connected to the second light emitter, and including a third n-type semiconductor layer, a third active layer, and a third p-type semiconductor layer;
a first electrode connected to a surface of the second n-type semiconductor layer;
an ohmic electrode electrically connected to the third p-type semiconductor layer;
an adhesive layer disposed between the second light emitter and the third light emitter;
a substrate on which the first light emitter is disposed; and
a second electrode including a first contact region and a second contact region extending in different directions,
wherein:
the first electrode extends toward the first light emitter to be electrically connected to the first n-type semiconductor layer;
the first contact region extends toward the second light emitter, and the second contact region extends toward the substrate; and
the adhesive layer exposes at least a part of an outer sidewall of the second contact region.
2. The light emitting device of claim 1 , wherein:
the first contact region contacts the first n-type semiconductor layer, and the second contact region contacts the second n-type semiconductor layer; and
the first electrode and the second electrode overlap each other along a first direction.
3. The light emitting device of claim 1 , wherein the first electrode has a varying width along a thickness direction.
4. The light emitting device of claim 1 , wherein at least a portion of the adhesive layer does not overlap the first electrode.
5. The light emitting device of claim 1 , wherein the adhesive layer has a varying thickness along a longitudinal direction of the light emitting device.
6. The light emitting device of claim 1 , wherein the first electrode covers a side surface of the first active layer and a side surface of the first p-type semiconductor layer.
7. The light emitting device of claim 1 , further comprising a plurality of pads, the pads including:
a common pad electrically coupled with the first, second, and third n-type semiconductor layers;
a first pad electrically coupled with the first p-type semiconductor layer;
a second pad electrically coupled with the second p-type semiconductor layer; and
a third pad electrically coupled with the third p-type semiconductor layer,
wherein the first electrode overlaps at least one of the pads.
8. The light emitting device of claim 1 , wherein the first, second, and third light emitters are configured to emit light having different peak wavelengths from each other.
9. The light emitting device of claim 1 , wherein at least a portion of the adhesive layer extends into the third light emitter.
10. A light emitting device comprising:
a first light emitter including a first n-type semiconductor layer, a first active layer, and a first p-type semiconductor layer;
a second light emitter connected to the first light emitter, and including a second n-type semiconductor layer, a second active layer, and a second p-type semiconductor layer;
a third light emitter connected to the second light emitter, and including a third n-type semiconductor layer, a third active layer, and a third p-type semiconductor layer;
a first electrode connected to a surface of the second n-type semiconductor layer;
an ohmic electrode electrically connected to the third p-type semiconductor layer;
an adhesive layer disposed between the second light emitter and the third light emitter;
a substrate on which the first light emitter is disposed; and
a second electrode including a first contact region and a second contact region extending in different directions,
wherein:
the first electrode extends toward the first light emitter to be electrically connected to the first n-type semiconductor layer; and
the adhesive layer exposes at least a part of an outer sidewall of the second contact region.
11. The light emitting device of claim 10 , wherein:
the first contact region contacts the first n-type semiconductor layer, and the second contact region contacts the second n-type semiconductor layer; and
the first electrode and the second electrode overlap each other along a first direction.
12. The light emitting device of claim 10 , wherein the first electrode has a varying width along a thickness direction.
13. The light emitting device of claim 10 , wherein at least a portion of the adhesive layer does not overlap the first electrode.
14. The light emitting device of claim 10 , wherein the adhesive layer has a varying thickness along a longitudinal direction of the light emitting device.
15. The light emitting device of claim 10 , wherein the first electrode covers a side surface of the first active layer and a side surface of the first p-type semiconductor layer.
16. The light emitting device of claim 10 , further comprising a plurality of pads, the pads including:
a common pad electrically coupled with the first, second, and third n-type semiconductor layers;
a first pad electrically coupled with the first p-type semiconductor layer;
a second pad electrically coupled with the second p-type semiconductor layer; and
a third pad electrically coupled with the third p-type semiconductor layer,
wherein the first electrode overlaps at least one of the pads.
17. The light emitting device of claim 10 , wherein the first, second, and third light emitters are configured to emit light having different peak wavelengths from each other.
18. The light emitting device of claim 10 , wherein the first electrode and the second electrode are disposed on different planes from each other.