Assemblies which include ruthenium-containing conductive gates
Some embodiments include a memory cell having a conductive gate comprising ruthenium. A charge-blocking region is adjacent the conductive gate, a charge-storage region is adjacent the charge-blocking region, a tunneling material is adjacent the charge-storage region, and a channel material is adjacent the tunneling material. Some embodiments include an assembly having a vertical stack of alternating insulative levels and wordline levels. The wordline levels contain conductive wordline material which includes ruthenium. Semiconductor material extends through the stack as a channel structure. Charge-storage regions are between the conductive wordline material and the channel structure. Charge-blocking regions are between the charge-storage regions and the conductive wordline material. Some embodiments include methods of forming integrated assemblies.
1. A method of forming an integrated assembly, comprising:
forming a stack comprising alternating first and second materials; the second material being an insulative material;
forming openings through the stack;
forming channel-material-pillars in some of the openings and leaving other openings empty;
removing the first material to leave voids;
forming conductive liners along the empty openings; and
while the conductive liners remain, filling the voids with conductive material.
2. The method of claim 1 wherein the conductive liners comprise ruthenium.
3. The method of claim 1 wherein the conductive material comprises ruthenium.
4. The method of claim 1 wherein the forming of the conductive liners further comprises forming the conductive liners along the voids.
5. The method of claim 1 wherein the filling of the voids further comprises filing the empty openings with the conductive material.
6. The method of claim 1 further comprising recessing the conductive material in the voids.
7. The method of claim 6 wherein the recessing occurs while the conductive liners remain in the empty openings.
8. The method of claim 1 further comprising removing the conductive liners from the empty openings.
9. The method of claim 1 wherein the forming of the conductive liners further comprises forming the conductive liners along the voids; and further comprising recessing the conductive liners within the voids.
10. The method of claim 1 wherein the forming of the conductive liners further comprises;
forming a first liner along a periphery of the empty opening; and
forming a second liner along a periphery of the first liner, at least one of the first and second liners being conductive.
11. The method of claim 1 wherein the forming of the conductive liners further comprises;
forming a first liner along a periphery of the empty opening; and
forming a second liner along a periphery of the first liner, at least one of the first and second liners being insulative.
12. A method of forming an integrated assembly, comprising:
forming a stack comprising alternating first and second materials; the second material being an insulative material;
forming openings through the stack;
forming channel-material-pillars in some of the openings and leaving other openings empty;
removing the first material to leave voids;
forming a first liner along a periphery of the empty openings;
forming a second liner along a periphery of the first liner; and
while the first and second liners remain, filling the voids with conductive material.
13. The method of claim 12 wherein at least one of the first and second liners is conductive.
14. The method of claim 12 wherein at least one of the first and second liners is insulative.
15. The method of claim 12 wherein both of the first and second liners is conductive.
16. The method of claim 12 wherein at least one of the first and second liners comprises ruthenium.
17. The method of claim 12 wherein the conductive material comprises ruthenium.
18. A method of forming an integrated assembly, comprising:
forming a stack comprising alternating first and second materials; the second material being an insulative material;
forming openings through the stack;
forming channel-material-pillars in some of the openings and leaving other openings empty;
removing the first material to leave voids; and
filling the voids and the empty openings with material comprising ruthenium.
19. The method of claim 18 further comprising recessing the material comprising ruthenium in the voids.
20. The method of claim 18 further comprising forming an insulative liner in the empty openings before the filling of the empty openings.
21. The method of claim 18 further comprising forming an insulative liner in the voids before the filling of the voids.