Granted Patent B2

US 12,439,734 · App. 18/144,000 · Granted Oct 7, 2025

Inventors: Yung-Chung Pan (Hsinchu, TW); Chang-Yu Tsai (Hsinchu, TW); Ching-Chung Hu (Hsinchu, TW); Ming-Pao Chen (Hsinchu, TW); Chi Shen (Hsinchu, TW); Wei-Chieh Lien (Hsinchu, TW)

Assignee: EPISTAR CORPORATION

H10H20/812H01L21/02458H01L21/0254H01L21/02579H10H20/8162H10D62/824H10H20/8242H10H20/8252

Abstract

Claims (30)

1. A semiconductor device, comprising:

a first semiconductor structure;

a second semiconductor structure on the first semiconductor structure;

an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises a well layer and a barrier layer, wherein the barrier layer has a band gap;

a first electron blocking region between the second semiconductor structure and the active region, wherein the first electron blocking region layer comprises a band gap which is greater than the band gap of the barrier layer;

a first aluminum-containing layer between the first electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking region;

a confinement layer between the first aluminum-containing layer and the active region; and

a second aluminum-containing layer between the first electron blocking region and the confinement layer, wherein the second aluminum-containing layer comprises a band gap which is greater than the band gap of the barrier layer and the band gap of the first electron blocking region;

wherein a thickness of the first aluminum-containing layer is smaller than a thickness of the confinement layer; and

wherein a thickness of the second aluminum-containing layer is smaller than the thickness of the confinement layer.

2. The semiconductor device according to claim 1 , wherein the first aluminum-containing layer comprises AlGaN or AlN.

3. The semiconductor device according to claim 1 , wherein the first aluminum-containing layer and the second aluminum-containing layer comprise the same material.

4. The semiconductor device according to claim 1 , wherein a ratio of a thickness of the second aluminum-containing layer to the thickness of the first aluminum-containing layer is between 0.8 and 1.2.

5. The semiconductor device according to claim 1 , wherein the first electron blocking region comprises aluminum and indium.

6. The semiconductor device according to claim 1 , wherein the second aluminum-containing layer comprises a thickness between 0.5 nm and 15 nm both inclusive.

7. The semiconductor device according to claim 1 , wherein the confinement layer comprises a thickness not more than 10 nm.

8. The semiconductor device according to claim 1 , wherein one of the first aluminum-containing layer and the second aluminum-containing layer comprises AlGaN or AlN.

9. The semiconductor device according to claim 8 , wherein one of the first aluminum-containing layer and the second aluminum-containing layer comprises Al g Ga (1-g) N, wherein 0.5<g≤1.

10. The semiconductor device according to claim 1 , wherein the first electron blocking region comprises multiple alternating first electron blocking layers and barriers, wherein one of the first electron blocking layers comprises a first band gap, one of the barriers comprises a second band gap, and the first band gap of the first electron blocking layer is greater than the second band gap of the one of the barriers.

11. The semiconductor device according to claim 1 , wherein the first electron blocking region comprises multiple first electron blocking layers, the first electron blocking layers comprise contents of a Group III element, and the contents are gradually changed along a direction from the active region to the first electron blocking region.

12. The semiconductor device according to claim 1 , wherein a thickness of the first electron blocking region is greater than a thickness of the second aluminum-containing layer.

13. The semiconductor device according to claim 1 , further comprising a second electron blocking layer between the first electron blocking region and the confinement layer.

14. The semiconductor device according to claim 13 , wherein the first aluminum-containing layer and the second aluminum-containing layer are disposed on opposite sides of the second electron blocking layer.

15. The semiconductor device according to claim 13 , wherein the second electron blocking layer comprises a band gap which is greater than the band gap of the barrier layer of the active region and smaller than the band gap of the first aluminum-containing layer.

16. The semiconductor device according to claim 13 , wherein the second electron blocking layer comprises a band gap smaller than the band gap of the second aluminum-containing layer.

17. The semiconductor device according to claim 1 , further comprising a semiconductor stack, formed between the first semiconductor structure and the active region;

wherein the semiconductor stack comprises alternating third semiconductor layers and fourth semiconductor layers;

wherein a band gap of the third semiconductor layer is greater than a band gap of the fourth semiconductor layer; and

wherein each of the fourth semiconductor layers comprises a Group III element with a highest content, and the highest content of the fourth semiconductor layer closer to the active region is higher than the highest content of the fourth semiconductor layer farther from the active region.

18. The semiconductor device according to claim 1 , wherein the confinement layer comprises a thickness smaller than a thickness of the barrier layer.

Assignments (2)

Continuity (4)

References Cited (31)