Gate-all-around field-effect transistor device
View Patent ↗A method of forming a semiconductor device includes: forming semiconductor fin structures over a substrate, where each of the semiconductor fin structures includes a layer stack over a semiconductor fin, the layer stack including alternating layers of a first semiconductor material and a second semiconductor material; forming a capping layer over sidewalls and upper surfaces of the semiconductor fin structures; and forming hybrid fins over isolation regions on opposing sides of the semiconductor fin structures, where forming the hybrid fins includes: forming dielectric fins over the isolation regions; and forming dielectric structures over the dielectric fins, which includes: forming an etch stop layer (ESL) over the dielectric fins; doping the ESL with a dopant; and forming a first dielectric material over the doped ESL.
1 . A method of forming a semiconductor device, the method comprising:
forming semiconductor fin structures over a substrate, wherein each of the semiconductor fin structures comprises a layer stack over a semiconductor fin, wherein the layer stack comprises alternating layers of a first semiconductor material and a second semiconductor material;
forming a capping layer over sidewalls and upper surfaces of the semiconductor fin structures;
forming hybrid fins over isolation regions, wherein the isolation regions are on opposing sides of the semiconductor fin structures, wherein forming the hybrid fins comprises:
forming dielectric fins over the isolation regions; and
forming dielectric structures over the dielectric fins, comprising:
forming an etch stop layer (ESL) over the dielectric fins;
after forming the ESL, doping the ESL with a dopant; and
forming a first dielectric material over the doped ESL;
forming a dummy gate structure over the semiconductor fin structures and over the hybrid fins;
forming gate spacers along sidewalls of the dummy gate structure;
performing an anisotropic etching process to remove first portions of the layer stacks and first portions of the dielectric structures that are disposed beyond exterior sidewalls of the gate spacers, wherein the dielectric fins remain after the anisotropic etching process; and
after performing the anisotropic etching process, replacing the dummy gate structure with a replacement gate structure.
2 . The method of claim 1 , wherein replacing the dummy gate structure comprises:
forming an interlayer dielectric (ILD) layer over the dielectric fins and around the dummy gate structure;
removing a gate electrode of the dummy gate structure to form an opening between the gate spacers, wherein second portions of the layer stacks and second portions of the dielectric structures are disposed between the gate spacers under the opening;
reducing a first height of a first dielectric structure of the dielectric structures while keeping a second height of a second dielectric structure of the dielectric structures unchanged; and
after reducing the first height, selectively removing the first semiconductor material of the second portions of the layer stacks, wherein after the selectively removing, the second semiconductor material of the second portions of the layer stacks forms nanostructures, wherein the second dielectric structure extends further from the substrate than an upper surface of the nanostructures distal from the substrate.
3 . The method of claim 2 , further comprising, after selectively removing the first semiconductor material:
filling the opening with an electrically conductive material; and
recessing an upper surface of the electrically conductive material below an upper surface of the second dielectric structure distal from the substrate.
4 . The method of claim 3 , further comprising forming a gate dielectric material around the nanostructures before filling the opening.
5 . The method of claim 3 , further comprising selectively forming a tungsten layer on the electrically conductive material after the recessing.
6 . The method of claim 3 , further comprising, after selectively removing the first semiconductor material and before filling the opening, reducing first widths of first portions of the dielectric fins disposed between the gate spacers while keeping second widths of second portions of the dielectric fins disposed under the gate spacers unchanged.
7 . The method of claim 2 , wherein the capping layer and the first semiconductor material comprise a same material.
8 . The method of claim 2 , further comprising forming source/drain regions over the semiconductor fins after performing the anisotropic etching process and before forming the ILD layer.
9 . The method of claim 8 , further comprising, after performing the anisotropic etching process and before forming the source/drain regions, replacing portions of the first semiconductor material disposed under the gate spacers with inner spacers, wherein the inner spacers are formed of a second dielectric material.
10 . The method of claim 1 , wherein doping the ESL comprises performing an implantation process to implant the dopant in the ESL.
11 . The method of claim 10 , wherein the first dielectric material is a metal oxide, wherein the ESL is formed of a second dielectric material, and the dopant of the ESL is B, As, Ge, C, Si, Ar, or Xe.
12 . The method of claim 2 , wherein reducing the first height of the first dielectric structure comprises performing a plasma etching process using an etchant, wherein doping the ESL reduces an etch rate of the ESL for the etchant.
13 . A method of forming a semiconductor device, the method comprising:
forming semiconductor fin structures protruding from between isolation regions formed on a substrate, wherein each of the semiconductor fin structures comprises a fin and a layer stack over the fin, wherein the layer stack comprises layers of a first semiconductor material interleaved with layers of a second semiconductor material;
forming dielectric fins over the isolation regions in trenches between the semiconductor fin structures, wherein the semiconductor fin structures extend further from the substrate than the dielectric fins;
forming dielectric structures over the dielectric fins, comprising:
depositing an etch stop layer (ESL) in the trenches over the dielectric fins;
implanting a dopant into the ESL; and
forming a metal oxide in the trenches over the doped ESL;
forming a dummy gate structure over the semiconductor fin structures and the dielectric structures;
forming an interlayer dielectric layer (ILD) around the dummy gate structure;
removing a dummy gate electrode of the dummy gate structure to form an opening in the ILD, wherein a first dielectric structure of the dielectric structures underlies the opening;
performing a first etching process to reduce a first height of the first dielectric structure; and
after performing the first etching process, selectively removing the first semiconductor material underlying the opening, wherein the second semiconductor material underlying the opening forms a plurality of channel regions of the semiconductor device.
14 . The method of claim 13 , further comprising:
forming a gate dielectric material around the plurality of channel regions; and
after forming the gate dielectric material, forming an electrically conductive material around the plurality of channel regions.
15 . The method of claim 13 , wherein after performing the first etching process, the doped ESL underlying the metal oxide of the first dielectric structure remains over a respective dielectric fin.
16 . The method of claim 13 , wherein the method further comprises, after removing the dummy gate electrode and before performing the first etching process:
forming a patterned mask layer in the opening, wherein the patterned mask layer exposes the first dielectric structure, wherein performing the first etching process removes upper portions of the first dielectric structure.
17 . The method of claim 16 , further comprising, after performing the first etching process and before the selectively removing, performing a second etching process to remove the patterned mask layer and a dummy gate dielectric layer of the dummy gate structure.
18 . The method of claim 13 , further comprising, after forming the dummy gate structure and before forming the ILD:
removing portions of the layer stack disposed beyond sidewalls of the dummy gate structure; and
forming source/drain regions over the semiconductor fins on opposing sides of the dummy gate structure.
19 . A semiconductor device comprising:
a semiconductor fin protruding above a substrate;
a first isolation region and a second isolation region on opposing sides of the semiconductor fin;
nanostructures over and vertically aligned with the semiconductor fin;
source/drain regions at opposing ends of the nanostructures;
a first dielectric fin and a second dielectric fin on the first isolation region and the second isolation region, respectively;
a first dielectric structure and a second dielectric structure on the first dielectric fin and the second dielectric fin, respectively, wherein each of the first dielectric structure and the second dielectric structure comprises a dielectric material and an etch stop layer around sidewalls and a bottom surface of the dielectric material; and
a gate electrode around the nanostructures, wherein the gate electrode extends along a first portion of the first dielectric structure and a first portion of the second dielectric structure, wherein the first portion of the first dielectric structure extends further from the substrate than the first portion of the second dielectric structure.
20 . The semiconductor device of claim 19 , further comprising a gate spacer along a sidewall of the gate electrode, wherein the gate spacer extends along a second portion of the first dielectric structure and a second portion of the second dielectric structure, wherein an upper surface of the second portion of the first dielectric structure distal from the substrate is level with an upper surface of the second portion of the second dielectric structure.