Semiconductor device structure with uniform threshold voltage distribution and method of forming the same
An embodiment method includes: forming a semiconductor liner layer on exposed surfaces of a fin structure that extends above a dielectric isolation structure disposed over a substrate; forming a first capping layer to laterally surround a bottom portion of the semiconductor liner layer; forming a second capping layer over an upper portion of the semiconductor liner layer; and annealing the fin structure having the semiconductor liner layer, the first capping layer, and the second capping layer thereon, the annealing driving a dopant from the semiconductor liner layer into the fin structure, wherein a dopant concentration profile in a bottom portion of the fin structure is different from a dopant concentration profile in an upper portion of the fin structure.
1. A semiconductor device structure, comprising:
a fin structure extending above a dielectric isolation structure disposed over a silicon substrate, the fin structure including:
a source region;
a drain region; and
a channel region disposed between the source region and the drain region, wherein an average germanium concentration in a bottom region of the channel region is different from an average germanium concentration in an upper region of the channel region, and wherein a threshold voltage of the fin structure is uniform across a height of the fin structure.
2. The semiconductor device structure of claim 1 , wherein a difference between the average germanium concentration, expressed as a percentage, in the bottom region of the channel region and the average germanium concentration, expressed as a percentage, in the upper region of the channel region is in a range from about 3% to about 10%.
3. The semiconductor device structure of claim 1 , further comprising a gate structure over the channel region of the fin structure, the gate structure including a gate dielectric layer conformally lining the channel region of the fin structure and a gate electrode disposed over the gate dielectric layer.
4. The semiconductor device structure of claim 1 , wherein
the channel region further includes a base portion extending from the silicon substrate;
the base portion of the channel region is laterally surrounded by the dielectric isolation structure; and
the base portion of the channel region is free of germanium.
5. The semiconductor device structure of claim 4 , further comprising a dielectric fin disposed on the silicon substrate and configured next to the fin structure.
6. The semiconductor device structure of claim 5 , wherein
the dielectric fin is laterally surrounded by the dielectric isolation structure; and
the dielectric isolation structure further extends to be interposed between the silicon substrate and the dielectric fin.
7. The semiconductor device structure of claim 1 , wherein the upper region of the channel region includes a nonuniform germanium concentration.
8. The semiconductor device structure of claim 1 , wherein
the upper region of the channel region includes a peripheral region and a central region surrounded by the peripheral region; and
the central region is substantially free of germanium.
9. The semiconductor device structure of claim 1 , wherein the source region, the drain region, and the channel region are components of a p-type field effect transistor.
10. The semiconductor device structure of claim 9 , wherein the source region and the drain region include silicon germanium doped with boron (SiGeB).
11. The semiconductor device structure of claim 10 , wherein the source region and the drain region further include tin.
12. A semiconductor device structure, comprising:
a semiconductor substrate;
a dielectric isolation structure disposed over the semiconductor substrate; and
a first fin structure and a second fin structure separated by and extending above the dielectric isolation structure, wherein
the first fin structure includes a first source region, a first drain region, and a first channel region disposed between the first source region and the first drain region,
the first channel region includes a base portion, a bottom portion and an upper portion with a nonuniform concentration, and
an average germanium concentration in the bottom portion of the first channel region is greater than an average germanium concentration in the upper portion of the first channel region, and wherein a threshold voltage of the first fin structure is uniform across a height of the first fin structure.
13. The semiconductor device structure of claim 12 , wherein a difference between the average germanium concentration, expressed as a percentage, in the bottom portion of the first channel region and the average germanium concentration, expressed as a percentage, in the upper portion of the first channel region is in a range from about 3% to about 10%.
14. The semiconductor device structure of claim 12 , further comprising a first gate structure over the first channel region of the first fin structure, the first gate structure including a first gate dielectric layer conformally lining the first channel region of the first fin structure and a first gate electrode disposed over the first gate dielectric layer.
15. The semiconductor device structure of claim 12 , wherein
the first channel region further includes a base portion extending from the semiconductor substrate;
the base portion of the first channel region is laterally surrounded by the dielectric isolation structure; and
the base portion of the first channel region is free of germanium.
16. The semiconductor device structure of claim 12 , further comprising a dielectric fin disposed on the semiconductor substrate and configured next to the first fin structure, wherein
the dielectric fin is laterally surrounded by the dielectric isolation structure, and
the dielectric isolation structure further extends to be interposed between the semiconductor substrate and the dielectric fin.
17. The semiconductor device structure of claim 12 , wherein
the upper portion of the first channel region further includes a peripheral region and a central region surrounded by the peripheral region; and
the central region is substantially free of germanium.
18. The semiconductor device structure of claim 12 , wherein
the second fin structure includes a second source region, a second drain region, and a second channel region disposed between the second source region and the second drain region;
the first source region, the first drain region, and the first channel region are components of a p-type field effect transistor;
the second source region, the second drain region, and the second channel region are components of a n-type field effect transistor; and
the second channel region is free of germanium.
19. The semiconductor device structure of claim 18 , wherein
the first source region and the first drain region include silicon germanium doped with tin and boron; and
the second source region and the second drain region include silicon carbide doped with phosphorous.
20. A semiconductor device structure, comprising:
a fin structure extending above a dielectric isolation structure disposed over a silicon substrate, the fin structure including:
a source region;
a drain region; and
a channel region disposed between the source region and the drain region, wherein
an average germanium concentration in a bottom region of the channel region is different from an average germanium concentration in an upper region of the channel region,
a threshold voltage of the fin structure is uniform across a height of the fin structure, and
the source region and the drain region include silicon germanium doped with tin and boron.