Method and apparatus for forming a patterned structure on a substrate
The disclosure relates to the manufacture of semiconductor devices, especially to methods and processing assemblies for forming a patterned structure on a substrate. The methods comprise providing the substrate comprising a first structure into a reaction chamber, wherein a surface of the first structure comprises a first material and the substrate comprises a second material, and selectively depositing a conformal passivation layer on the first material relative to the second material to cover the first structure, and selectively depositing an etch-stop layer on the second material relative to the passivation layer. In some embodiments, a multiple patterning or a tone reversal of a pattern may be performed using the methods and deposition assemblies of the disclosure.
1. A method of reversing patterning tone of a patterned substrate, the method comprising
providing the substrate comprising a patterned hard mask into a reaction chamber, wherein a surface of the patterned hard mask comprises a first material and the hard mask is formed on the substrate comprising a second material;
selectively depositing a conformal passivation layer on the first material relative to the second material to cover the patterned hard mask;
selectively depositing an etch-stop layer on the second material relative to the passivation layer; and
selectively etching areas of the substrate not covered by the etch-stop layer.
2. The method of claim 1 , wherein the pattern of the hard mask comprises a gap extending through the hard mask.
3. The method of claim 1 , wherein the first material comprises a metal.
4. The method of claim 1 , wherein the first material is carbon-based.
5. The method of claim 1 , wherein the second material comprises silicon.
6. The method of claim 5 , wherein the second material comprises a silicon containing compound comprising a metal including aluminum or titanium.
7. The method of claim 5 , wherein the second material comprises silicon oxide, silicon nitride, SOG, amorphous silicon, silicon oxycarbide, or compounds thereof.
8. The method of claim 1 , wherein the second material comprises an oxide or a nitride.
9. The method of claim 1 , wherein the passivation layer comprises an organic polymer.
10. The method of claim 9 , wherein the organic polymer comprises polyimide.
11. The method of claim 9 , further comprising selectively blocking the second material before depositing the passivation layer on the first material.
12. The method of claim 10 , wherein the blocking comprises performing a silylation treatment.
13. The method of claim 1 , wherein the etch-stop layer comprises a metal oxide.
14. The method of claim 1 , wherein the second material is a metalorganic resist (MOR).
15. The method of claim 1 , wherein the etch-stop layer is deposited by a cyclic deposition process comprising providing a first etch-stop material precursor and a second etch-stop material precursor into the reaction chamber alternately and sequentially.