Etch stop layer-based approaches for conductive via fabrication and structures resulting therefrom
Etch stop layer-based approaches for via fabrication are described. In an example, an integrated circuit structure includes a plurality of conductive lines in an ILD layer, wherein each of the plurality of conductive lines has a bulk portion including a metal and has an uppermost surface including the metal and a non-metal. A hardmask layer is on the plurality of conductive lines and on an uppermost surface of the ILD layer, and includes a first hardmask component on and aligned with the uppermost surface of the plurality of conductive lines, and a second hardmask component on and aligned with regions of the uppermost surface of the ILD layer. A conductive via is in an opening in the hardmask layer and on a portion of one of the plurality of conductive lines, the portion having a composition different than the uppermost surface including the metal and the non-metal.
1. An integrated circuit structure, comprising:
a plurality of conductive lines in an inter-layer dielectric (ILD) layer above a substrate, wherein each of the plurality of conductive lines has a bulk portion comprising a metal and has an uppermost surface comprising the metal and a non-metal;
a hardmask layer on the plurality of conductive lines and on an uppermost surface of the ILD layer, the hardmask layer comprising a first hardmask component on and aligned with the uppermost surface of the plurality of conductive lines, and a second hardmask component on and aligned with regions of the uppermost surface of the ILD layer, the first and second hardmask components differing in composition from one another; and
a conductive via in an opening in the hardmask layer and on a portion of one of the plurality of conductive lines, the portion having a composition different than the uppermost surface comprising the metal and the non-metal.
2. The integrated circuit structure of claim 1 , wherein the non-metal is selected from the group consisting of oxygen, silicon, germanium and boron.
3. The integrated circuit structure of claim 1 , wherein the metal is selected from the group consisting of cobalt, copper, tungsten and nickel.
4. The integrated circuit structure of claim 1 , wherein the first hardmask component is a metal oxide selected from the group consisting of AlOx, HfOx, ZrOx and TiOx.
5. The integrated circuit structure of claim 1 , wherein the portion of the one of the plurality of conductive lines is substantially co-planar with the uppermost surface comprising the metal and the non-metal.
6. The integrated circuit structure of claim 1 , wherein the portion of the one of the plurality of conductive lines is recessed below the uppermost surface comprising the metal and the non-metal.
7. The integrated circuit structure of claim 1 , wherein the first hardmask component is confined to the uppermost surface of the plurality of conductive lines.
8. The integrated circuit structure of claim 1 , wherein the first hardmask component extends onto the uppermost surface of the ILD layer.
9. The integrated circuit structure of claim 1 , wherein a portion of the conductive via is on a portion of the second hardmask component of the hardmask layer.
10. The integrated circuit structure of claim 1 , wherein the first hardmask component has an uppermost surface substantially co-planar with an uppermost surface of the second hardmask component.
11. The integrated circuit structure of claim 1 , further comprising: a second ILD layer above the hardmask layer, wherein the conductive via is further in an opening of the second ILD layer.
12. The integrated circuit structure of claim 1 , wherein one of the plurality of conductive lines is coupled to an underlying conductive via structure, the underlying conductive via structure connected to an underlying metallization layer of the integrated circuit structure.
13. An integrated circuit structure, comprising:
a plurality of conductive lines in an inter-layer dielectric (ILD) layer above a substrate;
a hardmask layer on the plurality of conductive lines and on an uppermost surface of the ILD layer, the hardmask layer comprising a first hardmask component on and aligned with the uppermost surface of the plurality of conductive lines, and a second hardmask component on and aligned with regions of the uppermost surface of the ILD layer, the first and second hardmask components differing in composition from one another, and the first hardmask component comprising a lower etch stop layer and an upper layer different from the lower etch stop layer, the lower etch stop layer confined to the uppermost surface of the plurality of conductive lines; and
a conductive via in an opening in the hardmask layer and on a portion of one of the plurality of conductive lines.
14. The integrated circuit structure of claim 13 , wherein the lower etch stop layer is selected from the group consisting of SiOx and SiNx, and wherein the upper layer of the first hardmask component is a metal oxide selected from the group consisting of AlOx, HfOx, ZrOx and TiOx.
15. The integrated circuit structure of claim 13 , wherein the first hardmask component is confined to the uppermost surface of the plurality of conductive lines.
16. The integrated circuit structure of claim 13 , wherein the first hardmask component extends onto the uppermost surface of the ILD layer.
17. The integrated circuit structure of claim 13 , wherein a portion of the conductive via is on a portion of the second hardmask component of the hardmask layer.
18. The integrated circuit structure of claim 13 , wherein the first hardmask component has an uppermost surface substantially co-planar with an uppermost surface of the second hardmask component.
19. The integrated circuit structure of claim 13 , further comprising: a second ILD layer above the hardmask layer, wherein the conductive via is further in an opening of the second ILD layer.
20. The integrated circuit structure of claim 13 , wherein one of the plurality of conductive lines is coupled to an underlying conductive via structure, the underlying conductive via structure connected to an underlying metallization layer of the integrated circuit structure.
21. A method of fabricating an integrated circuit structure, the method comprising:
forming a plurality of conductive lines in an inter-layer dielectric (ILD) layer above a substrate, wherein each of the plurality of conductive lines has a bulk portion comprising a metal;
treating the plurality of conductive lines to form an uppermost surface comprising the metal and a non-metal;
forming a hardmask layer on the plurality of conductive lines and on an uppermost surface of the ILD layer, the hardmask layer comprising a first hardmask component on and aligned with the uppermost surface of the plurality of conductive lines, and a second hardmask component on an aligned with regions of the uppermost surface of the ILD layer, the first and second hardmask components differing in composition from one another;
forming an opening in the hardmask layer exposing a portion of one of the plurality of metal lines; modifying the exposed portion of the one of the plurality of metal lines to remove the non-metal from the uppermost surface of the exposed portion of the one of the plurality of metal lines; and
forming a conductive via in the opening in the hardmask layer and on the modified exposed portion of the one of the plurality of conductive lines.
22. The method of claim 21 , wherein modifying the exposed portion of the one of the plurality of metal lines comprises retaining the metal of the uppermost surface.
23. The method of claim 21 , wherein modifying the exposed portion of the one of the plurality of metal lines comprises removing the metal of the uppermost surface to form a recessed portion of the one of the plurality of metal lines.
24. The method of claim 21 , wherein treating the plurality of conductive lines comprises exposing the plurality of conductive lines to ammonia and a source of a non-metal selected from the group consisting of oxygen, silicon, germanium and boron.
25. The method of claim 21 , wherein forming the hardmask layer comprises using a directed self-assembly (DSA) approach or a selective growth approach.