In-situ focus ring coating
A method of etching a substrate includes loading the substrate into a plasma etch chamber, the plasma etch chamber including a focus ring surrounding the substrate, the focus ring including a bulk material and a surface layer, the surface layer including a refractory metal; flowing a process gas including fluorine and carbon into the plasma etch chamber; coating a carbide layer over the surface layer of the focus ring, the coating including exposing the focus ring to a plasma generated from the process gas in the plasma etch chamber, the carbide layer including a carbide of the refractory metal; and etching the substrate, the etching including exposing the substrate to the plasma.
1. A method of etching a substrate, the method comprising:
loading the substrate into a plasma etch chamber, the plasma etch chamber comprising a focus ring surrounding the substrate, the focus ring comprising a bulk material and a surface layer, the surface layer comprising a refractory metal;
flowing a process gas comprising fluorine and carbon into the plasma etch chamber;
coating a carbide layer over the surface layer of the focus ring, the coating comprising exposing the focus ring to a plasma generated from the process gas in the plasma etch chamber, the carbide layer comprising a carbide of the refractory metal; and
etching the substrate, the etching comprising exposing the substrate to the plasma.
2. The method of claim 1 , wherein the substrate comprises a patterned hard mask layer and an underlying layer, and wherein the etching comprises etching the underlying layer.
3. The method of claim 2 , further comprising performing cycles of plasma etch process for a plurality of substrates without chamber open service to replace the focus ring, a total time duration of the cycles of plasma etch process is between 20 h and 1000 h.
4. The method of claim 2 , wherein the patterned hard mask layer comprises amorphous carbon layer (ACL).
5. The method of claim 2 , wherein the underlying layer comprises silicon oxide.
6. The method of claim 1 , wherein the refractory metal is tungsten, molybdenum, niobium, tantalum, or ruthenium.
7. The method of claim 1 , wherein the bulk material comprises polycrystalline silicon or single crystalline silicon.
8. The method of claim 1 , wherein the refractory metal of the surface layer comprises pure metal, metal carbide, metal nitride, or metal silicide.
9. A method of etching a substrate, the method comprising:
loading the substrate into a plasma etch chamber, the substrate comprising a patterned hard mask layer and an underlying layer, the plasma etch chamber comprising a focus ring, the focus ring comprising a bulk material and a surface layer, the surface layer comprising a refractory metal;
performing a surface pretreatment for the focus ring, the surface pretreatment comprising exposing the focus ring to a first plasma in the plasma etch chamber to form a coating over the surface layer; and
performing a plasma etch process to etch the underlying layer, the plasma etch process comprising exposing the substrate to a second plasma in the plasma etch chamber, wherein the coating protects the focus ring from being etched by the second plasma.
10. The method of claim 9 , further comprising repeating the plasma etch process to process a plurality of substrates without performing a chamber open service to replace the focus ring, a total time duration of repeating the plasma etch process is between 20 h and 1000 h.
11. The method of claim 10 , further comprising, after repeating the plasma etch process, evaluating a degree of wear damage of the focus ring.
12. The method of claim 11 , further comprising regenerating the coating in response to determining that the wear damage is greater than a threshold value for maintenance.
13. The method of claim 9 , wherein the first plasma comprises carbon, and wherein the coating comprises a carbide of the refractory metal.
14. The method of claim 9 , wherein the second plasma comprises fluorine.
15. The method of claim 9 , wherein the first plasma and the second plasma are generated from a same process gas.
16. The method of claim 9 , wherein the surface pretreatment and the plasma etch process are overlapped in time.
17. The method of claim 9 , wherein the refractory metal is tungsten, molybdenum, niobium, tantalum, or ruthenium.
18. The method of claim 9 , wherein the bulk material accounts for between 90% and 99% by mass of the focus ring.
19. A method of etching a substrate, the method comprising:
repeatedly performing a plasma etch process for a plurality of substrates in a plasma etch chamber comprising a focus ring, the focus ring comprising a bulk material and a surface layer, the surface layer comprising a refractory metal, the focus ring having a thickness at an outer edge greater than a thickness at an inner edge, each of the plurality of the substrates comprising a patterned hard mask layer and an underlying layer, the plasma etch process comprising
loading one of the plurality of substrate into the plasma etch chamber, and
exposing the substrate to a plasma generated from a process gas comprising fluorine and carbon in the plasma etch chamber, the plasma etching the underlying layer, wherein a coating comprising a carbide of the refractory metal is formed over the surface layer of the focus ring; and
evaluating a wear damage of the focus ring, the evaluating comprising determining a change in a thickness of the focus ring at the outer edge or the inner edge.
20. The method of claim 19 , further comprising regenerating the focus ring, the regenerating comprising depositing the refractory metal to recover the surface layer.