Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device includes the following. A core material layer and a patterned mask layer are formed above a target layer. A first spacer layer is formed and a first treatment process is performed to form a treated first spacer layer. A first removal process is performed on the treated first spacer layer and the patterned mask layer to form multiple first spacers. The core material layer is patterned to form a core layer using the first spacers as a mask. A second spacer layer is formed and a second treatment process is performed to form a treated second spacer layer. A second removal process is performed on the treated second spacer layer and the core layer to form multiple second spacers. A pattern of the second spacers is transferred to the target layer to form a patterned target layer.
1 . A method of manufacturing a semiconductor device, comprising:
forming a core material layer above a target layer;
forming a patterned mask layer on the core material layer;
forming a first spacer layer to cover the patterned mask layer and the core material layer;
performing a first treatment process to form a treated first spacer layer;
performing a first removal process on the treated first spacer layer and the patterned mask layer to form a plurality of first spacers;
patterning the core material layer to form a core layer using the first spacers as a mask;
forming a second spacer layer to cover the core layer;
performing a second treatment process to form a treated second spacer layer, wherein during the second treatment process, a part of the second spacer layer remains covering the core layer;
performing a second removal process on the treated second spacer layer and the core layer to form a plurality of second spacers; and
transferring a pattern of the second spacers to the target layer to form a patterned target layer.
2 . The method of manufacturing the semiconductor device according to claim 1 , wherein a material of the first spacer layer and the second spacer layer comprises a dielectric material.
3 . The method of manufacturing the semiconductor device according to claim 1 , wherein density of the treated first spacer layer is higher than density of the first spacer layer.
4 . The method of manufacturing the semiconductor device according to claim 1 , wherein density of the treated second spacer layer is higher than density of the second spacer layer.
5 . The method of manufacturing the semiconductor device according to claim 1 , wherein hardness of the treated first spacer layer is higher than hardness of the first spacer layer.
6 . The method of manufacturing the semiconductor device according to claim 1 , wherein hardness of the treated second spacer layer is higher than hardness of the second spacer layer.
7 . The method of manufacturing the semiconductor device according to claim 1 , wherein hydrophilicity of the treated first spacer layer is different from hydrophilicity of the first spacer layer.
8 . The method of manufacturing the semiconductor device according to claim 1 , wherein hydrophilicity of the treated second spacer layer is different from hydrophilicity of the second spacer layer.
9 . The method of manufacturing the semiconductor device according to claim 1 , wherein dosage of the second treatment process is greater than dosage of the first treatment process.
10 . The method of manufacturing the semiconductor device according to claim 1 further comprising:
forming a sacrificial layer on the target layer; and
forming a hard mask layer on the target layer,
wherein transferring the pattern of the second spacers to the target layer to form the patterned target layer comprises:
patterning the hard mask layer and the sacrificial layer to form a patterned hard mask layer and a patterned sacrificial layer using the second spacers as a mask; and
patterning the target layer to form the patterned target layer using the patterned hard mask layer as a mask.
11 . The method of manufacturing the semiconductor device according to claim 1 , wherein the first treatment process comprises a plasma treatment process or an ion implantation process.
12 . The method of manufacturing the semiconductor device according to claim 1 , wherein the second treatment process comprises a plasma treatment process or an ion implantation process.
13 . A method of manufacturing a semiconductor device, comprising:
forming a core material layer above a target layer;
forming a patterned mask layer on the core material layer;
forming a first spacer layer to cover the patterned mask layer and the core material layer;
performing a first removal process on the first spacer layer and the patterned mask layer to form a plurality of first spacers;
patterning the core material layer to form a core layer using the first spacers as a mask;
forming a second spacer layer to cover the core layer;
performing a first treatment process to change a property of the second spacer layer and to form a treated second spacer layer, wherein during the first treatment process, a part of the second spacer layer remains covering the core layer;
performing a second removal process on the treated second spacer layer and the core layer to form a plurality of second spacers; and
transferring a pattern of the second spacers to the target layer to form a patterned target layer.
14 . The method of manufacturing the semiconductor device according to claim 13 , further comprising performing a second treatment process to change a property of the first spacer layer and to form a treated first spacer layer, wherein density of the treated first spacer layer is higher than density of the first spacer layer.
15 . The method of manufacturing the semiconductor device according to claim 13 , wherein density of the treated second spacer layer is higher than density of the second spacer layer.
16 . The method of manufacturing the semiconductor device according to claim 14 , wherein hardness of the treated first spacer layer is higher than hardness of the first spacer layer.
17 . The method of manufacturing the semiconductor device according to claim 13 , wherein hardness of the treated second spacer layer is higher than hardness of the second spacer layer.
18 . The method of manufacturing the semiconductor device according to claim 14 , wherein hydrophilicity of the treated first spacer layer is different from hydrophilicity of the first spacer layer.
19 . The method of manufacturing the semiconductor device according to claim 13 , wherein hydrophilicity of the treated second spacer layer is different from hydrophilicity of the second spacer layer.