Composition for forming organic film, patterning process, and compound
A composition for forming an organic film, including: a compound represented by the following general formula (1); and an organic solvent, wherein in the general formula (1), X represents any one group of X1 to X3 represented by the following general formulae (2), (3), and (5), and two or more kinds of X are optionally used in combination, wherein in the general formula (3), W represents a carbon atom or a nitrogen atom; “n1” represents 0 or 1; “n2” represents an integer of 1 to 3; and R 1 independently represents any one of groups represented by the following general formula (4), and wherein in the general formula (5), R 2 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and R 3 represents any one of the following groups.
1 . A composition for forming an organic film, comprising:
a compound represented by the following general formula (1); and
an organic solvent,
wherein in the general formula (1), X represents any one group of X1 to X3 represented by the following general formulae (2), (3), and (5), and two or more kinds of X are optionally used in combination,
wherein in the general formula (3), W represents a carbon atom or a nitrogen atom; “n1” represents 0 or 1; “n2” represents an integer of 1 to 3; and R 1 independently represents any one of groups represented by the following general formula (4), and
wherein in the general formula (5), R 2 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and R 3 represents any one of the following groups.
2 . The composition for forming an organic film according to claim 1 , wherein the compound represented by the general formula (1) satisfies 1.00≤Mw/Mn≤1.15 where Mw is a weight-average molecular weight and Mn is a number-average molecular weight measured by gel permeation chromatography in terms of polystyrene.
3 . The composition for forming an organic film according to claim 1 , wherein the organic solvent is a mixture of: one or more kinds of organic solvent having a boiling point of lower than 180° C.; and one or more kinds of organic solvent having a boiling point of 180° C. or higher.
4 . The composition for forming an organic film according to claim 2 , wherein the organic solvent is a mixture of: one or more kinds of organic solvent having a boiling point of lower than 180° C.; and one or more kinds of organic solvent having a boiling point of 180° C. or higher.
5 . The composition for forming an organic film according to claim 1 , further comprising at least one of a surfactant and a plasticizer.
6 . The composition for forming an organic film according to claim 2 , further comprising at least one of a surfactant and a plasticizer.
7 . The composition for forming an organic film according to claim 3 , further comprising at least one of a surfactant and a plasticizer.
8 . The composition for forming an organic film according to claim 4 , further comprising at least one of a surfactant and a plasticizer.
9 . A patterning process, comprising:
forming an organic film on a body to be processed by using the composition for forming an organic film according to claim 1 ;
forming a silicon-containing resist intermediate film on the organic film by using a silicon-containing resist intermediate film material;
forming a resist upper layer film on the silicon-containing resist intermediate film by using a photoresist composition;
forming a circuit pattern in the resist upper layer film;
transferring the pattern to the silicon-containing resist intermediate film by etching while using the resist upper layer film having the formed pattern as a mask;
transferring the pattern to the organic film by etching while using the silicon-containing resist intermediate film having the transferred pattern as a mask; and
further forming a pattern to the body to be processed by etching while using the organic film having the transferred pattern as a mask.
10 . A patterning process, comprising:
forming an organic film on a body to be processed by using the composition for forming an organic film according to claim 1 ;
forming a silicon-containing resist intermediate film on the organic film by using a silicon-containing resist intermediate film material;
forming an organic anti-reflective film, BARC, on the silicon-containing resist intermediate film;
forming a resist upper layer film on the BARC by using a photoresist composition to form a four-layer film structure;
forming a circuit pattern in the resist upper layer film;
transferring the pattern to the BARC film and the silicon-containing resist intermediate film by etching while using the resist upper layer film having the formed pattern as a mask;
transferring the pattern to the organic film by etching while using the silicon-containing resist intermediate film having the transferred pattern as a mask; and
further forming a pattern to the body to be processed by etching the body to be processed while using the organic film having the transferred pattern as a mask.
11 . A patterning process, comprising:
forming an organic film on a body to be processed by using the composition for forming an organic film according to claim 1 ;
forming an inorganic hard mask selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the organic film;
forming a resist upper layer film on the inorganic hard mask by using a photoresist composition;
forming a circuit pattern in the resist upper layer film;
transferring the pattern to the inorganic hard mask by etching while using the resist upper layer film having the formed pattern as a mask;
transferring the pattern to the organic film by etching while using the inorganic hard mask having the transferred pattern as a mask; and
further forming a pattern to the body to be processed by etching the body to be processed while using the organic film having the transferred pattern as a mask.
12 . A patterning process, comprising:
forming an organic film on a body to be processed by using the composition for forming an organic film according to claim 1 ;
forming an inorganic hard mask selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the organic film;
forming an organic anti-reflective film, BARC, on the inorganic hard mask;
forming a resist upper layer film on the BARC by using a photoresist composition to form a four-layer film structure;
forming a circuit pattern in the resist upper layer film;
transferring the pattern to the BARC film and the inorganic hard mask by etching while using the resist upper layer film having the formed pattern as a mask;
transferring the pattern to the organic film by etching while using the inorganic hard mask having the transferred pattern as a mask; and
further forming a pattern to the body to be processed by etching the body to be processed while using the organic film having the transferred pattern as a mask.
13 . The patterning process according to claim 11 , wherein the inorganic hard mask is formed by a CVD method or an ALD method.
14 . The patterning process according to claim 12 , wherein the inorganic hard mask is formed by a CVD method or an ALD method.
15 . The patterning process according to claim 9 , wherein the circuit pattern is formed by a photolithography using light having a wavelength of 10 nm or more and 300 nm or less, a direct writing with electron beam, nanoimprinting, or a combination thereof.
16 . The patterning process according to claim 10 , wherein the circuit pattern is formed by a photolithography using light having a wavelength of 10 nm or more and 300 nm or less, a direct writing with electron beam, nanoimprinting, or a combination thereof.
17 . The patterning process according to claim 9 , wherein the circuit pattern is developed with an alkaline development or an organic solvent.
18 . The patterning process according to claim 9 , wherein the body to be processed is a semiconductor device substrate, a metal film, a metal carbide film, a metal oxide film, a metal nitride film, a metal oxycarbide film, or a metal oxynitride film.
19 . The patterning process according to claim 18 , wherein the metal is silicon, titanium, tungsten, hafnium, zirconium, chromium, germanium, copper, silver, gold, aluminum, indium, gallium, arsenic, palladium, iron, tantalum, iridium, molybdenum, or an alloy thereof.
20 . A compound represented by the following general formula (1),
wherein in the general formula (1), X represents any one group of X1 to X3 represented by the following general formulae (2), (3), and (5), and two or more kinds of X are optionally used in combination,
wherein in the general formula (3), W represents a carbon atom or a nitrogen atom; “n1” represents 0 or 1; “n2” represents an integer of 1 to 3; and R 1 independently represents any one of groups represented by the following general formula (4), and
wherein in the general formula (5), R 2 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and R 3 represents any one of the following groups