Method for forming resist underlayer film
A method forms a resist underlayer film that has high resistance to dry etching using a gas containing a fluorocarbon. A method for forming a resist underlayer film includes the steps of: applying to a substrate a resist underlayer film-forming composition containing a fullerene derivative in which one to six molecules of malonic acid diester of the following Formula (1): wherein two Rs are each independently a C 1-10 alkyl group, are added to one molecule of fullerene, a compound having at least two epoxy groups, and a solvent; and baking the substrate applied with the resist underlayer film-forming composition at least one time at a temperature of 240° C. or higher under an atmosphere of nitrogen, argon, or a mixture thereof.
1. A method for forming a resist underlayer film comprising:
applying to a substrate a resist underlayer film-forming composition containing:
a compound having at least two epoxy groups,
a solvent, and
a fullerene derivative, in which one to six molecules of malonic acid diester of the following Formula (1) are added to one molecule of fullerene,
where two Rs are each independently a C 1-10 alkyl group; and
baking the substrate applied with the resist underlayer film-forming composition under an atmosphere of nitrogen, argon, or a mixture thereof to form the resist underlayer film, the baking comprising:
a first baking step performed at a first baking temperature of 240° C. or higher and 600° C. or lower under the atmosphere, and
a second baking step performed at a second baking temperature in a range of from 500° C. to 750° C. under the atmosphere, the second baking temperature being higher than the first baking temperature,
wherein an oxygen concentration under the atmosphere is in a range of from 0.01 ppm to 100 ppm.
2. The method for forming a resist underlayer film according to claim 1 , wherein the resist underlayer film-forming composition further contains a surfactant.
3. A method for forming a pattern comprising:
applying a silicon-containing intermediate layer-forming composition to the resist underlayer film formed by the method according to claim 1 , followed by baking, to form a silicon-containing intermediate layer;
forming a resist film on the silicon-containing intermediate layer;
carrying out at least exposure and development for the resist film to form a resist pattern; and
dry etching the silicon-containing intermediate layer using a gas containing a fluorocarbon through the resist pattern serving as a mask.