Substrate processing apparatus, method of manufacturing semiconductor device and plasma generating apparatus
According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a gas supplier through which a process gas is supplied to the process chamber; a plasma generator provided so as to protrude into the process chamber, constituted by a coil and an insulator, and configured to generate a plasma of the process gas in the process chamber; and an adjuster capable of adjusting a gap distance between the coil and the insulator.
1 . A substrate processing apparatus comprising:
a process chamber in which a substrate is processed;
a gas supplier through which a process gas is supplied to the process chamber;
a plasma generator including an insulator provided with a curved surface so as to protrude into the process chamber, and a coil having a shape that approximately fits into the curved surface of the insulator, and configured to generate a plasma of the process gas in the process chamber;
an adjuster capable of adjusting a gap distance between the coil and the insulator; and
a shield arranged above the coil to cover the coil, wherein the shield comprises:
a first shield arranged so as to cover an upper side of the coil; and
a second shield provided inside the plasma generator, wherein the second shield is provided between opposite ends of the coil.
2 . The substrate processing apparatus of claim 1 , wherein the coil is provided with a spiral-shaped portion of at least 0.5 winding turn.
3 . The substrate processing apparatus of claim 1 , wherein the insulator is provided so as to protrude into the process chamber, and is of a hemispherical shape or a semi-spheroid shape.
4 . The substrate processing apparatus of claim 1 , wherein each of the first and second shields comprises a conductive metal plate of a cylindrical shape or of a rectangular parallelepiped shape.
5 . The substrate processing apparatus of claim 1 , wherein the adjuster comprises a moving structure capable of vertically moving the coil.
6 . The substrate processing apparatus of claim 5 , wherein the moving structure comprises a micrometer, and
wherein the coil is vertically moved by rotating the micrometer.
7 . The substrate processing apparatus of claim 5 , wherein the coil is fixed to a fixing structure, and
wherein the moving structure is configured to vertically move the fixing structure.
8 . The substrate processing apparatus of claim 7 ,
wherein the coil and the adjuster are arranged inside the shield.
9 . The substrate processing apparatus of claim 8 , wherein the fixing structure is made of an insulating material, and fixes both ends of the coil.
10 . The substrate processing apparatus of claim 1 , wherein the plasma generator is provided above the process chamber.
11 . The substrate processing apparatus of claim 1 , further comprising:
one or more plasma generators,
wherein each of the one or more plasma generators is provided so as to protrude into the process chamber, constituted by a coil and an insulator and configured to generate the plasma of the process gas in the process chamber.
12 . The substrate processing apparatus of claim 1 , wherein a first end of the coil is connected to a matcher and a high frequency power supply, and a second end of the coil is connected to a ground.
13 . The substrate processing apparatus of claim 1 , wherein the shield is connected to a ground.
14 . The substrate processing apparatus of claim 1 , wherein an efficiency of generating the plasma is capable of being changed by adjusting the gap distance between the coil and the insulator by using the adjuster.
15 . The substrate processing apparatus of claim 1 , wherein the plasma generator comprises a reinforcing member,
wherein ends of the coil are fixed by the reinforcing member.
16 . The substrate processing apparatus of claim 1 , wherein one end of the coil is connected to a ground, and
wherein the first shield and the second shield are connected to the ground.
17 . The substrate processing apparatus of claim 1 , wherein the gap distance between the coil and the insulator is adjusted by the adjuster such that a plasma distribution in the process chamber becomes uniform in a horizontal direction on the substrate.
18 . A method of manufacturing a semiconductor device, comprising:
(a) loading a substrate into a process chamber of a substrate processing apparatus, wherein the substrate processing apparatus comprises:
the process chamber in which the substrate is processed;
a gas supplier through which a process gas is supplied to the process chamber;
a plasma generator including an insulator provided with a curved surface so as to protrude into the process chamber, and a coil having a shape that approximately fits into the curved surface of the insulator, and configured to generate a plasma of the process gas in the process chamber;
a shield arranged above the coil to cover the coil, wherein the shield comprises:
a first shield arranged so as to cover an upper side of the coil; and
a second shield provided inside the plasma generator, wherein the second shield is provided between opposite ends of the coil; and
an adjuster capable of adjusting a gap distance between the coil and the insulator; and
(b) generating the plasma of the process gas in the process chamber by the plasma generator.
19 . A plasma generating apparatus comprising:
a plasma generator including an insulator provided with a curved surface so as to protrude into a process chamber in which a substrate is processed, and a coil having a shape that approximately fits into the curved surface of the insulator, and configured to generate a plasma of a process gas in the process chamber;
a shield arranged above the coil to cover the coil, wherein the shield comprises:
a first shield arranged so as to cover an upper side of the coil; and
a second shield provided inside the plasma generator, wherein the second shield is provided between opposite ends of the coil; and
an adjuster capable of adjusting a gap distance between the coil and the insulator.