Hard mask and preparation method thereof, preparation method of josephson junction, and superconducting circuit
A hard mask includes a silicon oxide layer provided on a bare silicon wafer; and a silicon nitride layer provided on the silicon oxide layer, wherein the silicon nitride is provided with a first pattern, the silicon oxide layer is provided with a second pattern corresponding to the first pattern, the first pattern and the second pattern have different shapes, and the first pattern and the second pattern are configured to assist in forming a Josephson junction on the bare silicon wafer.
1. A method for preparing a hard mask, the method comprising:
forming a silicon oxide layer on a preset bare silicon wafer;
forming a silicon nitride layer on the silicon oxide layer; and
forming a first pattern on the silicon nitride layer and a second pattern corresponding to the first pattern on the silicon oxide layer to form a hard mask, wherein
the first pattern and the second pattern have different shapes,
the first pattern and the second pattern are formed in different directions; and
the first pattern and the second pattern are configured to assist in forming a Josephson junction on the bare silicon wafer.
2. The method of claim 1 , further comprising:
acquiring a stress of the silicon nitride layer; and
when the stress is greater than a preset stress threshold, adjusting a ratio between a nitrogen material and a silicon material in the silicon nitride layer to cause the stress to be smaller than or equal to the preset stress threshold.
3. The method of claim 1 , wherein forming the first pattern on the silicon nitride layer comprises:
forming an image transmission layer on the silicon nitride layer;
forming a third pattern on the image transmission layer; and
forming the first pattern on the silicon nitride layer based on the third pattern.
4. The method of claim 3 , wherein forming the third pattern on the image transmission layer comprises:
forming a photoresist layer on the image transmission layer;
forming a pattern to be transmitted on the photoresist layer; and
forming the third pattern on the image transmission layer based on the pattern to be transmitted.
5. The method of claim 3 , wherein forming the image transmission layer comprises forming the image transmission layer by a chromium material.
6. A method for preparing a Josephson junction, the method comprising:
forming a preset material on a preset bare silicon wafer through a first hard mask to generate a first structure;
forming the preset material on the preset bare silicon wafer through a second hard mask to generate a second structure, the first structure and the second structure being in different directions; and
generating the Josephson junction through the first structure and the second structure, the Josephson junction serving as a nonlinear inductance element.
7. The method of claim 6 , wherein the preset material comprises an aluminum material, a binary nitride material, a ternary nitride material, or a composite oxide material.
8. The method of claim 6 , wherein generating the Josephson junction through
the first structure and the second structure comprises:
acquiring an overlapping structure formed between the first structure and the second structure; and
determining the overlapping structure as the Josephson junction.
9. The method of claim 6 , wherein a direction of the first structure is perpendicular to a direction of the second structure.
10. The method of claim 6 , further comprising removing the first hard mask and the second hard mask.