Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
Techniques for reducing the specific contact resistance of metal-semiconductor (group IV) junctions by interposing a monolayer of group V or group III atoms at the interface between the metal and the semiconductor, or interposing a bi-layer made of one monolayer of each, or interposing multiple such bi-layers. The resulting low specific resistance metal-group IV semiconductor junctions find application as a low resistance electrode in semiconductor devices including electronic devices (e.g., transistors, diodes, etc.) and optoelectronic devices (e.g., lasers, solar cells, photodetectors, etc.) and/or as a metal source and/or drain region (or a portion thereof) in a field effect transistor (FET). The monolayers of group III and group V atoms are predominantly ordered layers of atoms formed on the surface of the group IV semiconductor and chemically bonded to the surface atoms of the group IV semiconductor.
1. A method of forming an electrical contact, comprising:
forming, by segregation, an ordered monolayer of atoms out of a layer of material that is in contact with a surface of a semiconductor, wherein those atoms segregated as the monolayer are initially introduced into the layer of material, and thereafter, are segregated through annealing so as to form the ordered monolayer coordinated with and bonded to atoms at the surface of the semiconductor; and
depositing a barrier metal to form an electrical contact to the semiconductor with the ordered monolayer of atoms interposed therebetween, enabling an electrical current to pass between the barrier metal and the semiconductor through the ordered monolayer of atoms when the electrical contact is electrically biased.
2. The method of claim 1 , wherein the layer of material is a doped silicon oxide layer or silicon nitride layer, and following the annealing, performing a wet chemical etching leaving behind the ordered monolayer of atoms in contact with the surface of the semiconductor.
3. The method of claim 1 , wherein the barrier metal comprises tantalum nitride, titanium nitride, or ruthenium.
4. The method of claim 2 , wherein the barrier metal comprises tantalum nitride, titanium nitride, or ruthenium.
5. The method of claim 1 , wherein the ordered monolayer of atoms is an ordered monolayer of group V atoms.
6. The method of claim 1 , wherein the ordered monolayer of atoms is an ordered monolayer of group III atoms.
7. The method of claim 2 , wherein the ordered monolayer of atoms is an ordered monolayer of group V atoms.
8. The method of claim 2 , wherein the ordered monolayer of atoms is an ordered monolayer of group III atoms.