Method for fabricating semiconductor device
A method for fabricating semiconductor device may include forming a source/drain pattern on a fin-type pattern, forming an etch stop film and an interlayer insulating film on the source/drain pattern, forming a contact hole in the interlayer insulating film, forming a sacrificial liner along a sidewall and a bottom surface of the contact hole, performing an ion implantation process while the sacrificial liner is present, removing the sacrificial liner and forming a contact liner along the sidewall of the contact hole, and forming a source/drain contact on the contact liner. The ion implantation process may include implant impurities into the source/drain pattern. The source/drain contact may be connected to the source/drain pattern.
1 . A method for fabricating a semiconductor device, comprising:
forming a source/drain pattern on a fin-type pattern;
forming an etch stop film and an interlayer insulating film on the source/drain pattern;
forming a contact hole in the interlayer insulating film;
forming a sacrificial liner along a sidewall and a bottom surface of the contact hole, the sacrificial liner being not in contact with the source/drain pattern;
performing an ion implantation process while the sacrificial liner is present, the ion implantation process including implanting impurities into the source/drain pattern;
removing the sacrificial liner and forming a contact liner along the sidewall of the contact hole; and
forming a source/drain contact on the contact liner, the source/drain contact being connected to the source/drain pattern.
2 . The method of claim 1 , wherein the forming the contact liner comprises:
forming a pre-contact liner along the sidewall and the bottom surface of the contact hole; and
exposing the source/drain pattern by removing a part of the etch stop film and removing the pre-contact liner extending along the bottom surface of the contact hole.
3 . The method of claim 1 , wherein the removing the sacrificial liner comprises:
exposing the source/drain pattern by removing a portion of the etch stop film and the sacrificial liner extending along the bottom surface of the contact hole; and
removing the sacrificial liner extending along the sidewall of the contact hole.
4 . The method of claim 1 , wherein the contact liner comprises an insulating material including carbon and oxygen.
5 . The method of claim 4 , wherein
a concentration of carbon included in the contact liner at a first point of the contact liner differs from a concentration of carbon included in the contact liner at a second point of the contact liner, and
a height from an upper surface of the fin-type pattern to the first point is less than a height from an upper surface of the fin-type pattern to the second point.
6 . The method of claim 4 , wherein
a thickness of the contact liner at a first point of the contact liner is less than a thickness of the contact liner at a second point of the contact liner, and
a height from an upper surface of the fin-type pattern to the first point is less than a height from the upper surface of the fin-type pattern to the second point.
7 . The method of claim 4 , wherein
a thickness of the contact liner at a first point of the contact liner is equal to a thickness of the contact liner at a second point of the contact liner, and
a height from an upper surface of the fin-type pattern to the first point is less than a height from the upper surface of the fin-type pattern to the second point.
8 . The method of claim 4 , wherein the contact liner includes SiOC.
9 . The method of claim 4 , wherein a ratio of carbon to oxygen in the contact liner increases as the contact liner moves away from the source/drain contact.
10 . The method of claim 1 , further comprising:
forming a gate structure on the fin-type pattern before forming the contact hole,
wherein, after the forming the contact liner, the contact liner extends to an upper surface of the gate structure.
11 . The method of claim 1 , wherein the performing the ion implantation process comprises forming an impurity region in the source/drain pattern.
12 . The method of claim 1 , further comprising:
forming a plurality of sheet patterns on the fin-type pattern and connected to the source/drain pattern.
13 . A method for fabricating a semiconductor device,
forming a source/drain pattern on a fin-type pattern;
forming an etch stop film and an interlayer insulating film on the source/drain pattern;
forming a contact hole in the interlayer insulating film;
forming a sacrificial liner along a sidewall and a bottom surface of the contact hole, the sacrificial liner being not in contact with the source/drain pattern;
forming an impurity region in the source/drain pattern, the forming the impurity region being performed while the sacrificial liner is present;
removing the sacrificial liner and forming a contact liner along the sidewall of the contact hole, the contact liner including silicon, oxygen and carbon; and
forming a source/drain contact on the contact liner, the source/drain contact being connected to the source/drain pattern.
14 . The method of claim 13 , wherein the forming the contact liner comprises exposing the impurity region by removing a portion of the etch stop film.
15 . The method of claim 13 , wherein the sacrificial liner includes at least one of SIN, SiC, SiCN, SiO, SiOC, or SiOCN.
16 . The method of claim 13 , wherein
a ratio of carbon to oxygen at a first point of the contact liner is less than a ratio of carbon to oxygen at a second point of the contact liner, and
a height from an upper surface of the fin-type pattern to the first point is less than a height from the upper surface of the fin-type pattern to the second point.
17 . The method of claim 13 , wherein
a thickness of the contact liner at a first point of the contact liner is less than or equal to a thickness of the contact liner at a second point of the contact liner, and
a height from an upper surface of the fin-type pattern to the first point is less than a height from the upper surface of the fin-type pattern to the second point.
18 . A method for fabricating a semiconductor device, comprising:
forming a fin-type pattern and an upper pattern structure on a substrate, the upper pattern structure including a plurality of sacrificial patterns and a plurality of active patterns alternately stacked on each other;
forming a source/drain pattern in the upper pattern structure;
forming an etch stop film and an interlayer insulating film on the source/drain pattern;
forming a sheet pattern connected to the source/drain pattern, the forming the sheet pattern including removing the plurality of sacrificial patterns;
after the forming the sheet pattern, forming a contact hole in the interlayer insulating film;
forming a sacrificial liner along a sidewall and a bottom surface of the contact hole, the sacrificial liner being not in contact with the source/drain pattern;
performing an ion implantation process while the sacrificial liner is present, the ion implantation process including implanting impurities into the source/drain pattern;
removing the sacrificial liner and forming a pre-contact liner along the sidewall and the bottom surface of the contact hole, the pre-contact liner including a SiOC film;
forming a contact liner along the sidewall of the contact hole, the forming the contact liner including removing a portion of the etch stop film and the pre-contact liner; and
forming a source/drain contact on the contact liner, the source/drain contact being connected to the source/drain pattern.
19 . The method of claim 18 , wherein
a concentration of carbon included in the contact liner at a first point of the contact liner is less than or equal to a concentration of carbon included in the contact liner at a second point of the contact liner, and
a height from an upper surface of the fin-type pattern to the first point is less than a height from the upper surface of the fin-type pattern to the second point.
20 . The method of claim 18 , wherein
a thickness of the contact liner at a first point of the contact liner is less than or equal to a thickness of the contact liner at a second point of the contact liner, and
a height from an upper surface of the fin-type pattern to the first point is less than a height from the upper surface of the fin-type pattern to the second point.