Granted Patent B2

US 12,593,664 · App. 18/183,534 · Granted Mar 31, 2026

Inventors: Mitsuo Sano (Kamakura Kanagawa, JP); Susumu Obata (Yokohama Kanagawa, JP); Kazuhito Higuchi (Yokohama Kanagawa, JP); Takayuki Tajima (Sagamihara Kanagawa, JP)

Assignee: Kabushiki Kaisha Toshiba

H01L21/62H01G4/33H10D1/692H01G4/012

Abstract

Claims (10)

1 . A method of manufacturing a structure, comprising:

forming a recess in a Si substrate as a semiconductor substrate;

oxidizing at least a needle-shaped semiconductor substrate material on a bottom inner surface of the recess to form a needle-shaped Si oxide on the bottom inner surface of the recess; and

providing at least the needle-shaped Si oxide on the bottom inner surface of the recess with a liquid that is capable of dissolving a Si oxide, thereby dissolving the needle-shaped Si oxide.

2 . The method of manufacturing a structure according to claim 1 , wherein the formation of the recess in the semiconductor substrate is performed by etching with use of a catalyst that comprises a noble metal.

3 . The method of manufacturing a structure according to claim 2 , wherein the etching with use of the catalyst that comprises the noble metal is metal-assisted chemical etching.

4 . The method of manufacturing a structure according to claim 1 , wherein the oxidation is thermal oxidation, anodic oxidation, or photo-oxidation.

5 . The method of manufacturing a structure according to claim 1 , wherein the liquid that is capable of dissolving the Si oxide comprises hydrogen fluoride.

6 . The method of manufacturing a structure according to claim 1 , wherein the needle-shaped semiconductor substrate material remains on the bottom inner surface of the recess after the formation of the recess.

7 . The method of manufacturing a structure according to claim 6 , wherein the formation of the recess in the semiconductor substrate is performed by etching with use of a catalyst that comprises a noble metal.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (36)