Etching method, method of manufacturing article, and etching solution
An etching method according to an embodiment includes forming a catalyst layer made of a noble metal on a structure made of a semiconductor, and dipping the structure in an etching solution containing hydrofluoric acid, an oxidizer, and an organic additive to remove a portion of the structure that is in contact with the catalyst layer.
1. An etching method, comprising:
forming a catalyst layer made of a noble metal on a structure made of a semiconductor; and
dipping the structure in an etching solution containing hydrofluoric acid, an oxidizer, and an organic additive to remove a portion of the structure that is in contact with the catalyst layer,
the organic additive is at least one selected from the group consisting of a polyethylene glycol, succinic acid, malic acid, dipropylamine and alanine.
2. The method according to claim 1 , wherein the organic additive has a molecular weight of 60 to 20,000.
3. The method according to claim 1 , wherein a concentration of the organic additive in the etching solution is 0.01 to 1 mass %.
4. The method according to claim 1 , wherein a concentration of hydrogen fluoride in the etching solution is 5 to 10 mol/L.
5. The method according to claim 1 , wherein a concentration of the oxidizer in the etching solution is 2 to 4 mol/L.
6. The method according to claim 1 , wherein an aggregate of particles each made of the noble metal is formed as the catalyst layer, and the structure is dipped in the etching solution to remove portions of the structure that are close to the particles and a portion of the structure that corresponds to a gaps between the particles.
7. A method of manufacturing an article, the method comprising etching the structure by the etching method according to claim 1 .
8. The method according to claim 7 , wherein the article is a semiconductor device.