Air gap in beol interconnect
A first BEOL layer, including a first and a second signal line, a conformal dielectric surrounding an upper portion of a vertical sidewall of each of the first signal line and the second signal line, an air gap between the first and the second signal line, a vertical side boundary of the air gap is a vertical side surface of the first signal line. Forming a first and a second metal line in a sacrificial material in a first BEOL layer, removing the sacrificial material, forming a conformal dielectric surrounding vertical side surfaces of the first and the second metal line, an air gap between the first and the second metal line exposes an upper horizontal surface of a dielectric layer below the first BEOL layer, growing a dielectric selectively from an upper portion of the conformal dielectric, the air gap remains between the first and the second metal line.
1. A semiconductor device comprising:
a first back end of line (BEOL) layer, the first BEOL layer comprising a first signal line and a second signal line; and
a conformal dielectric surrounding vertical sidewalls of each of the first signal line and the second signal line;
an air gap between the first signal line and the second signal line,
wherein a vertical side boundary of the air gap is a vertical side surface of the conformal dielectric.
2. The semiconductor device according to claim 1 , further comprising:
wherein a lower horizontal boundary of the air gap is a BEOL dielectric layer below the first BEOL layer.
3. The semiconductor device according to claim 1 , wherein
an upper horizontal boundary of the air gap is a second dielectric selectively grown from the conformal dielectric.
4. The semiconductor device according to claim 3 , wherein
the second dielectric selectively grown from the conformal dielectric meet between the first signal line and the second signal line.
5. The semiconductor device according to claim 1 , further comprising:
a thin metal liner surrounding a lower horizontal surface and vertical side surfaces of the first signal line and the second signal line.
6. The semiconductor device according to claim 4 , wherein
an upper horizontal surface of the conformal dielectric is a lower horizontal surface of a second dielectric selectively grown from the conformal dielectric.
7. A semiconductor device comprising:
a first back end of line (BEOL) layer, the first BEOL layer comprising a first signal line and a second signal line;
a conformal dielectric surrounding an upper portion of a vertical sidewall of each of the first signal line and the second signal line; and
an air gap between the first signal line and the second signal line,
wherein a vertical side boundary of the air gap is a vertical side surface of the first signal line.
8. The semiconductor device according to claim 7 , wherein
a lower horizontal boundary of the air gap is a BEOL dielectric layer below the first BEOL layer.
9. The semiconductor device according to claim 7 , wherein
an upper horizontal boundary of the air gap is a second dielectric grown from the conformal dielectric.
10. The semiconductor device according to claim 9 , wherein
the second dielectric grown from the conformal dielectric meet between the first signal line and the second signal line.
11. The semiconductor device according to claim 7 , further comprising:
a thin metal liner surrounding a lower horizontal surface and vertical side surfaces of the first signal line and the second signal line.
12. The semiconductor device according to claim 7 , wherein
a vertical side surface of the conformal dielectric is a vertical side surface of a second dielectric grown from the conformal dielectric.
13. A method comprising:
forming a first metal line and a second metal line in a sacrificial material in a first back end of line (BEOL) layer;
removing the sacrificial material;
forming a conformal dielectric surrounding vertical side surfaces of the first metal line and the second metal line,
wherein an air gap between the first metal line and the second metal line exposes an upper horizontal surface of a dielectric layer below the first BEOL layer; and
growing a dielectric selectively from an upper portion of the conformal dielectric, wherein
the air gap remains between the first metal line and the second metal line.
14. The method according to claim 13 , further comprising:
forming a second sacrificial material between the first metal line and the second metal line in the gap.
15. The method according to claim 14 , further comprising:
removing the second sacrificial material.
16. The method according to claim 13 , wherein
a vertical side boundary of the air gap is a vertical side surface of the conformal dielectric.
17. The method according to claim 13 , further comprising:
a thin metal liner surrounding a lower horizontal surface and vertical side surfaces of the first signal line and the second signal line.
18. The method according to claim 13 , further comprising:
an upper horizontal boundary of the air gap is a second dielectric grown from the conformal dielectric.
19. The method according to claim 18 , further comprising:
the second dielectric selectively grown from the conformal dielectric meet between the first signal line and the second signal line.
20. The method according to claim 13 , wherein
an upper horizontal surface of the conformal dielectric is a lower horizontal surface of a second dielectric grown from the conformal dielectric.